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ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 01, 08 Jan 14. Course introduction Chapter 01. Course: ECE 875 Physical Electronics Time: Monday, Wednesday, Friday 11:30 a.m. - 12:20 p.m.

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ECE 875: Electronic Devices

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  1. ECE 875:Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

  2. Lecture 01, 08 Jan 14 Course introduction Chapter 01 VM Ayres, ECE875, S14

  3. Course: ECE 875 Physical Electronics Time: Monday, Wednesday, Friday 11:30 a.m. - 12:20 p.m. Place: Room 202 Urban Planning and Landscape Architecture Bldg. Website: http://www.egr.msu.edu/classes/ece875/ayresv VM Ayres, ECE875, S14

  4. Course: ECE 875 Physical Electronics Time: Monday, Wednesday, Friday 11:30 a.m. - 12:20 p.m. Place: Room 202 Urban Planning and Landscape Architecture Bldg. Website: http://www.egr.msu.edu/classes/ece875/ayresv In case we miss class due to travel: Alternative time:will try to reserve: Tuesday OR Thursday 11:40 a - 12:30 p VM Ayres, ECE875, S14

  5. Instructor: Professor Virginia Ayres (http://www.egr.msu.edu/ebnl) Research areas: Nanoelectronics, Nanobio Telephone: 517-355-5236 Email: ayresv@msu.edu, ayresv2162@aol.com Office: C-104, Engineering Research Complex Office Hours: Evenings 2 days before homework is due, 6:00-9:00 pm in Engineering Library VM Ayres, ECE875, S14

  6. Prerequisites: ECE 874 or equivalent • Textbook: Physics of Semiconductor Devices, Third Edition, S.M. Sze and K.K. Ng • Motivation for textbook: • For nanoelectronics research, need to know Sze contents + original papers • Model needed for publication in high impact journals. Sze will help VM Ayres, ECE875, S14

  7. Grading: Midterm (take-home) 150 pts. Final (take-home) 150 pts. Homework: 50 pts Total 350 pts Midterm date: TBD (spring break: 03-07 March 2014) Final due date: Friday, 02 May 14, to ECE Office (Ayres' mailbox) by 12:00 pm VM Ayres, ECE875, S14

  8. Course Content: Core: Part I: Semiconductor Physics Chapter 01: Physics and Properties of Semiconductors – a Review Part II: Device Building Blocks Chapter 02: p-n Junctions Chapter 03: Metal-Semiconductor Contacts Chapter 04: Metal-Insulator-Semiconductor Capacitors Part III: Transistors Chapter 05: Bipolar Transistors (if time allows) Chapter 06: MOSFETs Chapter 07: JFETs, MESFETs and MODFETs (if time allows) VM Ayres, ECE875, S14

  9. Course Content: Beyond core:TBD: Part I: Semiconductor Physics Chapter 01: Physics and Properties of Semiconductors – a Review Part II: Device Building Blocks Chapter 02: p-n Junctions Chapter 03: Metal-Semiconductor Contacts Chapter 04: Metal-Insulator-Semiconductor Capacitors Part III: Transistors Chapter 05: Bipolar Transistors Chapter 06: MOSFETs Chapter 07: JFETs, MESFETs and MODFETs VM Ayres, ECE875, S14

  10. ECE476 ECE875 Spring 2013 VM Ayres, ECE875, S14

  11. VM Ayres, ECE875, S14

  12. QM operation Microwave source Microwave oscillator Switches & amplifiers VM Ayres, ECE875, S14

  13. Lecture 01, 08 Jan 14 Course introduction VM Ayres, ECE875, S14

  14. Crystal Structures: Motivation: Electronics: Transport: e-’s moving in an environment Correct e- wave function in a crystal environment: Block function: Y(R) = expik.ay(R) = Y(R + a) Correct E-k energy levels versus direction of the environment: minimum = Egap Correct concentrations of carriers n and p Correct current and current density J: moving carriers I-V measurement J: Vext direction versus internal E-k: Egap direction Fixed e-’s and holes: C-V measurement (KE + PE) Y = EY x Probability f0 that energy level is occupied q n, p velocity Area VM Ayres, ECE875, S14

  15. Unit cells: Easy but important aspect is shown in this Figure: Two different type of bonds VM Ayres, ECE875, S14 Non-cubic

  16. These examples are all metals: Po, Na, W, Al, Au, etc. What a metallic bond looks like: So metals are good examples to show basic atomic arrangements. Picture and Animation: http://www.kentchemistry.com/links/bonding/metallic.htm VM Ayres, ECE875, S14

  17. These examples are semiconductors: Si. Ge, C, GaAs, GaP, etc. (1) Atomic arrangements are shown(2) Covalent bonds are shown VM Ayres, ECE875, S14

  18. Unit cells: A Unit cell is a convenient but not minimal volume that contains an atomic arrangement that shows the important symmetries of the crystal Why are Unit cells like these not good enough? Compare: Sze Pr. 01(a) versus Pr. 03 VM Ayres, ECE875, S14 Non-cubic

  19. fcc lattice, to match Pr. 03 VM Ayres, ECE875, S14

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  23. Go backwards: How many atoms did you need to consider to get this step right? Answer: 2 atoms VM Ayres, ECE875, S14

  24. Go backwards: How many atoms did you need to consider to get this step right? Answer: all: 14 atoms This was a simple calculation. 14 atoms would be a lot in a complicated calculation. VM Ayres, ECE875, S14

  25. Crystal Structures: Motivation:Electronics: Transport: e-’s moving in an environment Correct e- wave function in a crystal environment: Block function: Y(R) = expik.ay(R) = Y(R + a) Periodicity of the environment: Need specify where the atoms are Unit cell a3 for cubic systems sc, fcc, bcc, etc. OR Primitive cell for sc, fcc, bcc, etc. OR Atomic basis Think about: need to specify: Most atoms Fewer atoms Least atoms VM Ayres, ECE875, S14

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