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BiCMOS TECHNOLOGY

BiCMOS TECHNOLOGY. TALK FLOW. What is BiCMOS Why BiCMOS BiCMOS fabrication process CMOS inverter BiCMOS inverter Comparison between CMOS and BiCMOS Pros and Cons Applications Current status and future trends. Bipolar compatible CMOS(BiCMOS) tehnology: Introduced in early 1980s

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BiCMOS TECHNOLOGY

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  1. BiCMOS TECHNOLOGY

  2. TALK FLOW • What is BiCMOS • Why BiCMOS • BiCMOS fabrication process • CMOS inverter • BiCMOS inverter • Comparison between CMOS and BiCMOS • Pros and Cons • Applications • Current status and future trends

  3. Bipolar compatible CMOS(BiCMOS) tehnology: Introduced in early 1980s Combines Bipolar and CMOS logic BiCMOS CMOSBIPOLAR Low power dissipation High speed High packing density High output drive WHAT IS BiCMOS BiCMOS

  4. WHY BiCMOS For greater integration of mixed-signal analog systems To cover full delay-power space BiPOLAR BiCMOS CMOS Adapted from Kiat-Seng Yeo et al.,”CMOS/BiCMOS ULSI:Low voltage,Low power”,Pearson Education,Inc., First edition,p.2,2002 Speed Power

  5. BiCMOS FABRICATION PROCESS Adapted from A.R.Alvarage et al.,”An overview of BiCMOS Technology and Applications”,IEEE International Symposium on Circuits andSystems,1-3 May,1990

  6. BiCMOS CROSS-SECTION Adapted from J. M Rabaey, Digital Integrated Circuits: A DesignPrespective, NewJersey: Prentice-Hall, Inc., 1996.

  7. BiCMOS CROSS-SECTION Adapted from J. P. Uremuya, Circuit Design for CMOS VLSI, Massachusetts: Kluwer Academic Publishers, 1992.

  8. CMOS INVERTER CIRCUIT DIAGRAM VDD IP OP GND Adapted from www2.eng.cam.ac.uk/~dmh/3b2/invert.htm

  9. BASIC BiCMOS INVERTER Adapted from J. M Rabaey, Digital Integrated Circuits: A DesignPrespective,New Jersey: Prentice-Hall, Inc., 1996.

  10. CONVENTIONAL BiCMOS INVERTER Adapted from J. M Rabaey, Digital Integrated Circuits: A Design Prespective,New Jersey: Prentice-Hall, Inc., 1996.

  11. PULL UP EVENT C load Adapted from Sung-Mo Kang,Yusuf Leblebici,”CMOS Digital Integrated Circuits:Analysis and Design”,Tata McGraw-Hill,Third edition,2003,p.547.

  12. PULL DOWN EVENT C load Adapted from Sung-Mo Kang,Yusuf Leblebici,”CMOS Digital Integrated Circuits:Analysis and Design”,Tata McGraw-Hill,Third edition,2003,p.550.

  13. BiCMOS VS. CMOS VTC DYNAMIC CHARACTERISTICS CMOS BiCMOS Adapted from www2.eng.cam.ac.uk/~dmh/3b2/invert.htm

  14. SPEED COMPARISON Adapted from Larry Wissel and Elliot L. Gould,”Optimal Usage of CMOS within a BiCMOS Technology”,IEEE J. of solid-state circuits, Vol. 27, No. 3, March1992

  15. DELAY COMPARISON Adapted from Larry Wissel and Elliot L. Gould,”Optimal Usage of CMOS within a BiCMOS Technology”,IEEE J. of solid-state circuits, Vol. 27, No. 3, March 1992

  16. AREA COMPARISON A AREA C COMPLEXITY Adapted from H.Klose et al.,”Bicmos,a tehnology for High speed/High density ICs”,IEEE international conference on Computer Design:VLSI incomputers and proessors,2-4 Oct.,1989

  17. PROS OF BiCMOS • Improved speed over CMOS • Improved current drive over CMOS • Improved packing density over bipolar • Lower power consumption than bipolar • High input impedance • Low output impedance

  18. CONS OF BiCMOS • Increased manufacturing process complexity • Speed degradation due to scaling Adapted from Paul G. Y. Tsui et al.,”Study of BiCMOS Logic Gate Configurations for Improved Low-Voltage Performance”, IEEE J. of solid-state circuits, Vol. 28, No 3. March 1993.

  19. CONS OF BiCMOS(CONTD.) • Hot carrier degradation Adapted from J. David Burnett and Chenming hu,”Hot-Carrier Degradation in Bipolar transistors at 300 and 110 K-Effect on BiCMOS Inverter Performance”,IEEETrasactions On Electron Devices,Vol 17. No 3. April 1990.

  20. APPLICATIONS • Full custom ICs • SRAM,DRAM • Microproessor,controller • Semi custom ICs • Register,Flipflop • Standard cells • Adders,mixers,ADC,DAC • Gate arrays

  21. CURRENT STATUS AND FUTURE TRENDS • SiGe BiCMOS HP • SiGe BiCMOS WL • SiGe HBT

  22. BiCMOS PRODUCTS SiGe BiCMOS GPS CIRCUIT GSM 900 POWER AMPLIFIER Adapted from D.Harame et al.,”The Emerging Role of SiGe BiCMOS Technology in Wired and Wireless Communications”, Fourth IEEE International CaracasConference on Devices, Circuits and Systems, Aruba, April 17-19, 2002.

  23. BiCMOS PRODUCTS(CONTD.) W-CDMA DCR OC-48c SONET/SDH Mapper Adapted from D.Harame et al.,”The Emerging Role of SiGe BiCMOS Technology in Wired and Wireless Communications”, Fourth IEEE International CaracasConference on Devices, Circuits and Systems, Aruba, April 17-19, 2002.

  24. CONCLUSION The extra process complexity requires chip manufacturers to command a premium for BiCMOS products. In the analog market the ability to integrate large mixed systems provides thecompelling cost advantage of BiCMOS; this market is still emerging. BiCMOS is a complement to pure CMOS and Bipolar technologies in important system application areas.

  25. REFERENCES [1]Kiat-Seng Yeo et al.,”CMOS/BiCMOS ULSI:Low voltage,Low power”,Pearson Education,Inc., First edition,2002. [2]Sung-Mo Kang,Yusuf Leblebici,”CMOS Digital Integrated Circuits:Analysis and Design”,Tata McGraw-Hill,Third edition,2003. [3]E.A.Gonzalez,”BiCMOS processes,trends and applications”,DLSU ECE,Technical report,Nov.29,2004. [4]A.R.Alvarez et al.,”An overview of BiCMOS technology and applications”,IEEE International Symposium on Circuits andSystems,1-3 May,1990. [5] T. Sakurai, “A review on low-voltage BiCMOS circuits and a BiCMOS vs. CMOS speed comparison,” Proceedings of the 35th Midwest Symposium on Circuits and Systems, vol. 1, Aug. 9-12 1992. [6] J. M Rabaey, Digital Integrated Circuits: A DesignPrespective, NewJersey: Prentice-Hall, Inc., 1996. [7] J. P. Uremuya, Circuit Design for CMOS VLSI, Massachusetts: Kluwer Academic Publishers, 1992. [8] Adapted from H.Klose et al.,”Bicmos,a tehnology for High speed/High density ICs”,IEEE international conference on Computer Design:VLSI in computers and proessors,2-4 Oct.,1989 [9] Larry Wissel and Elliot L. Gould,”Optimal Usage of CMOS within a BiCMOS Technology”,IEEE J. of solid-state circuits, Vol. 27, No. 3, March 1992 [10] Paul G. Y. Tsui et al.,”Study of BiCMOS Logic Gate Configurations for Improved Low-Voltage Performance”, IEEE J. of solid-state circuits, Vol. 28, No 3. March 1993. [11] D.L.Harame,”Current Status and Future Trends of SiGe BiCMOS Technology” IEEE transactions on electron devices, vol. 48, no. 11, november 2001 [12]Adapted from D.Harame et al.,”The Emerging Role of SiGe BiCMOS Technology in Wired and Wireless Communications”, Fourth IEEE International CaracasConference on Devices, Circuits and Systems, Aruba, April 17-19, 2002.

  26. THANK YOU Q U E R R I E S ?

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