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Annealing studies of Mimosa19 & radiation hardness studies of Mimosa26

Annealing studies of Mimosa19 & radiation hardness studies of Mimosa26 Dennis Doering* 1 , Samir Amar-Youcef 1,3 ,Michael Deveaux 1 , Melissa Domachowski 1 , Ingo Fröhlich 1 , Christian Müntz 1 , Sarah Ottersbach 1 , Joachim Stroth 1 , Franz M. Wagner 2 for the CBM-MVD- Collaboration

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Annealing studies of Mimosa19 & radiation hardness studies of Mimosa26

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  1. Annealingstudiesof Mimosa19 & radiationhardnessstudiesof Mimosa26 Dennis Doering*1, Samir Amar-Youcef 1,3,Michael Deveaux1, Melissa Domachowski1, Ingo Fröhlich1, Christian Müntz1, Sarah Ottersbach1, Joachim Stroth1, Franz M. Wagner2 forthe CBM-MVD-Collaboration 1 Goethe University Frankfurt am Main, 2 TU München, Forschungsquelle Heinz Maier-Leibnitz (FRM II), 3 Helmholtz Research School, Frankfurt *doering@physik.uni-frankfurt.de

  2. Outline • MAPS, radiationdamageandannealing • Leakagecurrentandannealing • Charge spectrumandannealing • Radiation hardnessstudyof Mimosa26 • - Summary *doering@physik.uni-frankfurt.de

  3. Annealing studies with combined radiation irradiated MAPS The CBM Micro Vertex Detector based on MAPS The CBM-experiment (at FAIR) Motivation Expected radiation dose per CBM running-year: • How can a sensor chip tolerate such radiation doses? • Annealing & partiallydepleted Mimosa26?

  4. Annealing studies with combined radiation irradiated MAPS Operation principle of MAPS +3.3V Reset +3.3V Output SiO2 SiO2 SiO2 N++ N++ Diode P+ N+ P-Well P- Epitaxial Layer P+ Substrate

  5. Annealing studies with combined radiation irradiated MAPS Operation principle of MAPS +3.3V Reset +3.3V Output SiO2 SiO2 SiO2 N++ N++ Diode P+ N+ P- e- Epitaxial Layer P+

  6. Annealing studies with combined radiation irradiated MAPS Operation principle of MAPS +3.3V Reset +3.3V Output SiO2 SiO2 SiO2 N++ N++ Diode P+ N+ P- e- Epitaxial Layer P+

  7. Annealing studies with combined radiation irradiated MAPS Typesof radiation damage To be investigated and improved: Radiation hardness against… • … ionizing radiation: • Caused by charged particles and photons • Energy deposited into the electron cloud • Can ionize atoms and destroy molecules • Can bestudiedwith X-rayradiation • … non-ionizing radiation: • Caused by heavy, charged and neutral, particles • Energy deposited into the crystal lattice • Atoms are displaced • Can be studied with fast neutron radiation Farnan I, HM Cho, WJ Weber, 2007. "Quantification of Actinide α-Radiation Damage in Minerals and Ceramics." Nature 445(7124):190-193.

  8. Annealing studies with combined radiation irradiated MAPS Radiation tolerance against radiation +3.3V Reset +3.3V Output SiO2 SiO2 N++ N++ P+ N+ P- P+ Defectsgeneratedbynon-ionizingradiation.

  9. Annealing studies with combined radiation irradiated MAPS Positive Charge Radiation tolerance against radiation +3.3V Reset +3.3V Output SiO2 SiO2 N++ N++ P+ N+ P- P+ Positive chargegeneratedbyionizingradiation.

  10. Annealing studies with combined radiation irradiated MAPS Positive Charge Leakagecurrent +3.3V Reset +3.3V Output SiO2 SiO2 N++ N++ P+ N+ P- P+ - - - - - - - - Leakagecurrentcausedbyradiationinduceddefectsiscollected.

  11. Annealing studies with combined radiation irradiated MAPS Reduced positive Charge Annealing +3.3V Reset +3.3V Output Annealingofdefects SiO2 N++ N++ P+ N+ P- P+ Clusterformation Recombination Beneficialannealing: Interstitial atomsandvacanciesrecombine. Reversedannealing: Severaldefects form stableclusters. Leakagecurrentmayincreaseordecrease due toannealing.

  12. Annealing studies with combined radiation irradiated MAPS Sensors andirradiation Usedchips: Mimosa19 developedby IPHC Strasbourg. Fast reactorneutrons: +(~100kRad γ) → Mostlynon-ionizingradiationdamageassensorsare not powered. ~10keV X-rays (200kRad): onlyionizingradiationdamage. Combinedradiation: ;1 yearroomtemperatureannealing; 200kRad X-rays. Neutron radiationperformedby F. Wagner at FRM II Munich. X-rayradiationperformedby A. Dierlammat KIT. Mimosa19

  13. Annealing studies with combined radiation irradiated MAPS Temperatureprofile Heatingat T=80°C (73h) T[°C] 2h transport 80°C 20°C 1 year Measurementsandstorage at T=20°C (191h) Neutron radiation Measurements at T=20°C (280h) Time X-ray radiation

  14. Annealing studies with combined radiation irradiated MAPS Annealingatroomtemperature -20% Beneficialannealingat T=20°C decreasesleakagecurrentby 20%. Noreverseannealingobserved.

  15. Annealing studies with combined radiation irradiated MAPS Annealingat T=20°C and T=80°C Leakagecurrentdecreasesby ~70% after beneficialannealingat T=20°C and T=80°C. Neutron irradiatedsensorsexhibitsnosignificantannealing, neitherbeneficialnorreverse. Noreverseannealingobservedforupto 70h at T=80°C.

  16. Annealing studies with combined radiation irradiated MAPS Spectrumbeforeand after X-rayradiation Cd-109-source Calibrationpeak X-rayirradiationshiftedthespectrumtolowervalues.

  17. Annealing studies with combined radiation irradiated MAPS Spectrum after annealing Cd-109-source Calibrationpeak Annealingrecoverstheshiftofthespectrum.

  18. Annealing studies with combined radiation irradiated MAPS Calibrationpeakandannealing Cd-109-source • The positionofthecalibrationpeakisrecovered. • Not completelyrecovered after combinedradiation. • combinedradiationdamageeffect?

  19. Radiation hardness studies of Mimosa26 Mimosa26 Analog output pixelarray: 1152 columns*576 rows pitch 18.4 µm digital output Twoversions: Standard andpartiallydepleted More details: Talk C.Schrader

  20. Radiation hardness studies of Mimosa26 E Partially depleted Mimosa26 +3.3V Output +3.3V GND SiO2 SiO2 GND SiO2 SiO2 N+ P++ P++ N++ P++

  21. Radiation hardness studies of Mimosa26 First analysisresults Mimosa26 Spectrum Mimosa26 Noise Preliminary First testssuccessfullyperformedat T= -20°C and .

  22. Radiation hardness studies of Mimosa26 Comparisonstandardanddepletedsensor Fe-55 4 pixelcluster T=-20°C Shift after irradiation Noshift Peak ofthestandardsensorisshiftedtolowerenergy. Peak ofthedepletedsensoris not shifted. The depletedsensorseemstobemoreradiationhardthanthestandardsensor, to be confirmed in beam tests  (June 2010).

  23. Annealing studies with combined radiation irradiated MAPS Summary • Annealing • Systematic annealing studies on MAPS have been performed. • Annealinghasbeenstudiedcomparing individual (X-ray, neutron) withcombinedirradiation. • Beneficial annealing effects are observed for X-ray and combined irradiation. • Significantannealingeffectsforonlyneutronirradiationare not observed. • Reverse annealingeffectshave not beenobserved. • Annealingrecoversthechargespectrumshift after X-rayradiationcompletely. • Mimosa26 • Mimosa26 radiationhardnessstudiesarestarted. • Depleted Mimosa26 seemstobemoreradiationhardthanstandardsensors. • Conclusion • Annealing seems to be a promising strategy to recover the radiation induced performance losses in the MAPS-based vertex detectors like the MVD of CBM. Thankyouforyourattention

  24. Backup

  25. Annealing studies with combined radiation irradiated MAPS Noise andCollectionpeak Onlydepletedsensors

  26. Annealing studies with combined radiation irradiated MAPS Calibrationpeak Vetotrigger: Onlydiodehits Depleted Standard

  27. +3.3V Annealing studies with combined radiation irradiated MAPS IReset Operation principleofthepreamplifier UK 3 Reset transistor 2 K 1 C 0 Time 1. Resettransistorisopenedrefillingthecapacity.

  28. +3.3V Annealing studies with combined radiation irradiated MAPS UF0 UF1 ILeakage Operation principleofthepreamplifier UK 3 Reset transistor 2 K 1 C 0 Time CDS= UF0- UF1 2 Time 2. Leakagecurrentlowersslightlythevoltage. The voltageismeasuredtwiceandcompared (CDS).

  29. +3.3V Annealing studies with combined radiation irradiated MAPS UF0 IReset UF1 Operation principleofthepreamplifier UK 3 Reset transistor 2 K 1 C 0 Time CDS= UF0- UF1 2 Time 3. Resettransistorisopenedagainrefillingthecapacity.

  30. +3.3V Annealing studies with combined radiation irradiated MAPS particle UF0 UF0 IReset UF1 UF1 ISignal ILeakage Operation principleofthepreamplifier UK 3 Reset transistor 2 K K 1 C 0 Time CDS= UF0- UF1 2 Time 4. A particlegeneratessignalcharge, whichlowersthevoltageandincreasesthe CDS.

  31. +3.3V Annealing studies with combined radiation irradiated MAPS UF0 UF0 UF0 IReset UF1 UF1 UF1 ILeakage Operation principleofthepreamplifier UK 3 Reset transistor 2 K 1 C 0 Time CDS=UF0- UF1 2 Time 5. Duringthenextframenoparticle, onlyleakagecurrentismeasured.

  32. Annealing studies with combined radiation irradiated MAPS Threshold Measurement of leakage current Variation: Noise Operation principleofthepreamplifier Hit identified! 2 K 1 CDS= UF0- UF1 2 Time 6. A thresholdisappliedtoidentify a hit whichmightbegeneratedby a particle.

  33. Annealing studies with combined radiation irradiated MAPS Defectannealing Defectmigration Complexformation Ef Em Complexdissociation Ed Em, Efand Eddepends on temperature. => Eachdefecthas a activationtemperature. So heatingthesensormaytransformthedefects. Heatingmoreactivatesmoredefects. In additionquestionofprobability.

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