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welcome. SEMINAR ON…. magnetic random access memory ( mram ). Why can’t your pc simply turn on like your television? MRAM uses magnetism rather than electrical power to store bits of data. MRAM is on the path to become the universal memory to replace DRAM, SRAM and Flash memory.

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  1. welcome

  2. SEMINAR ON… magnetic random access memory (mram)

  3. Why can’t your pc simply turn on like your television? MRAM uses magnetism rather than electrical power to store bits of data. MRAM is on the path to become the universal memory to replace DRAM, SRAM and Flash memory. MRAM is the enabling technology for computer systems on a single chip. INTRODUCTION

  4. It doesn’t forget anything when the power goes out. MRAM Promises to be, Cheap Fast Non volatile Low power alternative ATRACTIONS OF THIS NEW TECHNOLOGY

  5. MRAM uses magnetic cells to store data. MRAM possesses a distinct advantages over electrical. Continue……

  6. MRAM is a nonvolatile random access memory. which uses magnetic storage & magneto resistance(MR) to read the stored data. MRAM is memory technology that uses electron spin to store information. WHAT IS MRAM?

  7. Unlike conventional RAM chip technologies, data is not stored as electric charge or current flows, but by magnetic storage elements.  MRAM has been called "the ideal memory“ MRAM can resist high radiation, and can operate in extreme temperature conditions, very suited for military and space applications. Continue……

  8. An MRAM chip is made up of millions of pairs of tiny ferromagnetic plates (like the one covering hard drives) called memory cells, i.e., magnetic sandwiches consisting of two magnetic layers separated by a very thin insulating layer. HOW MRAM WORKS

  9. Unlike with DRAM chips, you don’t have to continuously refresh the data on solid state chips. MRAM will likely compete with Flash memory in the portable device market for the same reason that it will replace DRAM –it reduces power consumption. MAGNETIC RAM ARCHITECTURE

  10. Two methods used for data storage in MRAM cells are: 2-D Management Write Selection. 2. 1-D Management Write Selection. METHODS OF DATA STORAGE

  11. Early magnetic random access memory (as opposed to serial memories like tape and disk) used the natural hysteresis of magnetic materials to store data (‘1” or “0”) by using two or more current carrying wires or straps. Most of today’s MRAM concepts still use this write selection technique 2-D Management Write Selection

  12. Operate points Iy 2-D Management Write Selection No Switch Ix Ix,Iy together switch the cell Ix,Iy Alone Doesn’t Switch Cell

  13. In this new scheme, a select transistor per memory cell is used for writing and a much smaller current is used for reading than for writing. This should result in substantially wider process margins, but probably at the sacrifice of density due to the size of the required transistor in the cell. 1-D Management Write Selection

  14. Two methods that are used for data retrieval they are; Inductive readout scheme Magnetoresistive readout scheme METHODS OF DATA RETRIEVAL

  15. MRAM USING AMR MATERIALS

  16. A current through the stripe magnetized the NiFe clockwise or counterclockwise when aided by a current (field) from an orthogonal strip line Current in either strip by itself would not change the storage state. MRAM USING AMR MATERIALS

  17. MRAM USING GMR MATERIALS

  18. SPIN-VALVE STRUCTURE

  19. GMR by Analogy and its Origin in Spin-Dependent Scattering

  20. AMR materials showed a magneto resistance ratio of only 2%. The memory arrays in these memories sense relatively small signals (1mv) , leading to a read access time of about 250 ns. GMR materials showed a magneto resistance ratio of about 6% .Since the read access times tends to improve as the square of the signal, normal scaling would indicate that the improvement of a factor of 3 in magneto resistance would lead to a 9 times improvement in read access time. ADVANTAGES OF GMR TECHNOLOGY OVER AMR

  21. EEPROM The electrically erasable programmable read only memory boasts fast, unlimited readout. However, the write cycle is very slow , requires high voltages, and can only be done 10 5 times before the memory fails. COMPETING NONVOLATILE MEMORIES

  22. Flash Like EEPROM, most flash memories require high voltage for writing and has low cycling endurance, 10 6 cycles. At 5 to 10 msec, the write speed is considerable faster than EEPROM Continue……

  23. Unlimited cycling endurance and high speed read and write are key advantages of MRAM over most other nonvolatile technologies MRAM is intrinsically radiation immune and can also be used in high temperature applications. MRAM ADVANTAGES AND APPLICATIONS

  24. MRAM has potential in all memory applications Finally, the storing of use data for word addresses could be done in MRAM, once again extending the life of the system. Continue……

  25. The Future of MRAMExpected to Replace SRAM, DRAM, & FLASHPredicted to be the Memory Standard in both Computers & Consumer Electronics Research and developments

  26. MRAM will become the standard memory for the next couple of year MRAM will be use in other devices Continue……

  27. CONCLUSION……

  28. THANKYOU…

  29. Thanks……….. ??????????? ????? ??????????????

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