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Enhancement of Light Output Power of GaN -Based Light-Emitting Diodes by a Reflective Current Blocking Layer C. C. Kao, Y. K. Su , Fellow, IEEE, and C. L. Lin. Jeff Yang. Outline. Introduction Experiments conclusion References. Introduction.
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Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking LayerC. C. Kao, Y. K. Su, Fellow, IEEE, and C. L. Lin Jeff Yang
Outline • Introduction • Experiments • conclusion • References
Introduction • In this letter, we demonstrate GaN-based LEDs with highly reflective distributed Bragg reflector (DBR) CBL. • The LEDs with DBR CBL show better current spreading and also further improved the light output powers since reflective CBL effective prevents the emitted photons from absorption by the opaque metal electrodes. • The fabrication processes and characteristics of GaN-based LEDs with the DBR CBL will be discussed.