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Jeff Yang

Effect of Thickness of the p- AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN -Based LEDs Chung- Hsun Jang, J. K. Sheu , C. M. Tsai, S. C. Shei , W. C. Lai, and S. J. Chang. Jeff Yang. O utline. Introduction Experiment Result and Discussion Conclusion

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Jeff Yang

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  1. Effect of Thickness of the p-AlGaN Electron BlockingLayer on the Improvement of ESD Characteristics in GaN-Based LEDsChung-Hsun Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai, and S. J. Chang Jeff Yang

  2. Outline • Introduction • Experiment • Result and Discussion • Conclusion • Reference

  3. Introduction • the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN–GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. • If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN–GaN (MQW), thereby reducing the ESD endurance ability.

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