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Jeff Yang

Improved Carrier Distributions by Varying Barrier Thickness for InGaN / GaN LEDs S. F. Yu, Ray-Ming Lin, S. J. Chang , Senior Member, IEEE, J. R. Chen, J. Y. Chu, C. T. Kuo , and Z. Y. Jiao. Jeff Yang. Outline. Introduction Experiment Result and Discussion Conclusion. Introduction.

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Jeff Yang

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  1. Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDsS. F. Yu, Ray-Ming Lin, S. J. Chang, Senior Member, IEEE, J. R. Chen, J. Y. Chu, C. T. Kuo, and Z. Y. Jiao Jeff Yang

  2. Outline • Introduction • Experiment • Result and Discussion • Conclusion

  3. Introduction • The use of conventional MQWs results in the carriers accumulating in the last few pairs of MQWs against the p-side layer (i.e., not all MQWs would participate in carrier recombinatio n, due to the relatively low concentration and mobility of the holes) • In this study, we investigated the external quantum efficiency (EQE) of blue InGaN/GaN MQWs LEDs featuring quantum barriers of various thicknesses. Furthermore, we performed a novel experiment to verify the enhanced carrier distribution in MQWs that also adopt narrow quantum barriers (NQBs). 1

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