MOSFET SCALING

Jul 17, 2012

480 likes | 790 Views

Share Presentation

Embed Code

Link

nan

Download Presentation

MOSFET SCALING

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

1. ECE 663 MOSFET SCALING

MOSFET Scaling

MOSFET Scaling. ECE G201. next. Most Simple Model: Constant Field Scaling. E = V DD /L after scaling becomes E = (V DD / a )/(L/ a ) …where a >1. Impurity Concentration Scaling must also follow length scaling for depletion widths.

1.07k views • 22 slides

MOSFET Structure

Gate Oxide. Source. Gate. Drain. Field Oxide. n +. L. p-Si. Bulk (Substrate). MOSFET Structure. Importance for LSI/VLSI Low fabrication cost Small size Low power consumption Applications Microprocessors Memories Power Devices Basic Properties Unipolar device

1.99k views • 12 slides

MOSFET Device Structure

MOSFET Device Structure. Semiconductor Equations. Poisson Equation:. Electron current continuity equation:. Hole current continuity equation:. Electron current equation:. Hole current equation:. MOSFET Device Simulation. Converged?. Iterative Gummel Block Method. Solve for f , n, p.

993 views • 17 slides

MOSFET

MOSFET. As switches. Regions of Operation. In analogue electronics, the MOSFETs are designed to operation in the pinch-off or saturation region. They are found in high speed and/or high power amplifiers, oscillators, current sources, etc .

772 views • 17 slides

MOSFET

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson. MOSFET. History Structure Review Future Threshold Voltage I-V Characteristics Modifications to I-V: Depletion layer correction (Sup. 3) Mobility, Vsat Short Channel Effects

1.3k views • 37 slides

MOSFET

MOSFET. Flat-Band Voltage. The flat-band voltage is defined as the applied gate voltage such that there is no band bending in the semiconductor and, as a result, zero net space charge in this region. What does the charge density plot look like for the above band diagram?.

835 views • 32 slides

MOSFET Biasing

MOSFET Biasing. ELEC 121. D-MOSFET Self Bias. Determining the Q-point for D-MOSFET Self Bias. N Channel D-MOSFET Voltage Divider Bias. Q Point of D-MOSFET Voltage Divider Bias. Effect on Change in Q Point with Variation of R S. With an N Channel D-MOSFET, V GS may be positive.

3.67k views • 18 slides

MOSFET operation

MOSFET operation. Animation of the MOSFET manufacturing process I encourage you to look at the website given below and use the button “animate to next” – the actual process is described for each step. http://jas.eng.buffalo.edu/education/fab/NMOS/nmos.html. Basic structure of the MOSFET.

1.58k views • 21 slides

E-MOSFET

E-MOSFET. The E-MOSFET or enhancement MOSFET can operate in only the enhancement mode. With a positive voltage above a threshold value on the gate, an induced channel of thin layer of –ve charges is created.

2.3k views • 6 slides

ECE122 – Lab 7 MOSFET Parameters and Scaling Effects

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering. ECE122 – Lab 7 MOSFET Parameters and Scaling Effects. Jason Woytowich October 14, 2005. CMOS Scaling.

295 views • 12 slides

ECE122 – Lab 7 MOSFET Parameters and Scaling Effects

283 views • 14 slides

– MOSFET

POWER TRANSISTOR. – MOSFET. Example of power MOSFET parameters;. POWER TRANSISTOR. – MOSFET. The superior characteristics of MOSFETs are; Faster switching time; No second breakdown; Stable gain and response time over a wide temperature range (Figure on the next slide). POWER TRANSISTOR.

1.15k views • 20 slides

MOSFET Piecewise Models

MOSFET Piecewise Models. ECE 2204. Cut-off Region. I G = I D = I S = 0. NMOS PMOS. V GS ≤ V TN V GS ≥ V TP. Nonsaturation /Triode Region. I G = 0 I D ≤ I Dsat. NMOS PMOS. V GS ≥ V TN V DS ≤ V GS – V TN V GS ≤ V TP V DS ≥ V GS - V TP

397 views • 8 slides

IL 2222 - MOSFET

IL 2222 - MOSFET. Professor Ahmed Hemani Dept. Of ES, School of ICT, KTH Kista Email: hemani@kth.se Website: www.it.kth.se/~hemani. MOS Capacitor, MOSFET. MOS: M etal- O xide- S emiconductor. ~1.5nm thick Few oxide molecules Usually made of Poly Silicon. V g. V g. gate. gate. metal.

1.11k views • 60 slides

MOSFET

MOSFET.

439 views • 6 slides

Power MOSFET Market

Power MOSFET is a superior form of metal oxide semiconductor field effect transistor. It is specifically created to handle high-level powers. The power MOSFETâ€™s are assembled in a V configuration.

137 views • 9 slides

MOSFET

MOSFET. Dr. S. S. Jawale Head and Associate Professor Department of Electronics Yeshwantrao Chavan Mahavidyalaya, Tuljapur. B.Sc.-I Sem-I Paper-I. 1. MOS-Controlled Thyristor. New device that has become commercially available.

1.82k views • 24 slides

More Related