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Objectives: Simulation of Graphene Nanoribbon band-to-band tunneling FETs

Line Edge Roughness in GNR Tunneling FETs Mathieu Luisier and Gerhard Klimeck APL 94, 223505 (2009). Objectives: Simulation of Graphene Nanoribbon band-to-band tunneling FETs Study the influence of Line Edge Roughness (LER) on their performances. Approach:

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Objectives: Simulation of Graphene Nanoribbon band-to-band tunneling FETs

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  1. Line Edge Roughness in GNR Tunneling FETsMathieu Luisier and Gerhard Klimeck APL 94, 223505 (2009) Objectives: • Simulation of GrapheneNanoribbon band-to-band tunneling FETs • Study the influence of Line Edge Roughness (LER) on their performances Approach: • Non-equilibrium quantum transport with on single orbital per carbon atom • Atomistic description of the graphene ribbon • Edge atoms randomly removed with a given probability P • Statistical sampling of LER (100 random samples per roughness probability) Results and Impacts: • LER causes drastic increase of OFF-current and decrease of ON/OFF ratio (band gap states) • Help experimentalists design better devices, less sensitive to LER Image Caption Up: Single-gate graphenenanoribbon tunneling transistor and sample of a graphenenanoribbon with random LER Down: Transfer characteristics Id-Vgs of graphenenanoribbon tunneling FETs with different LER probabilities. Each curve represents the average of 100 different samples

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