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RADECS 2009 10 th RADECS Conference

RADECS 2009 10 th RADECS Conference. 14-18 September 2009 Bruges, Belgium. RADECS 2009 14-18 September 2009 Bruges, Belgium. The location for the RADECS 2009 Bruges - “Venice of the North”. Participating companies The “Belgian community”. SCK•CEN – Belgian Nuclear Research Center

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RADECS 2009 10 th RADECS Conference

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  1. RADECS 200910th RADECS Conference 14-18 September 2009Bruges, Belgium RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  2. RADECS 200914-18 September 2009Bruges, Belgium The location for the RADECS 2009 Bruges - “Venice of the North” RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  3. Participating companiesThe “Belgian community” • SCK•CEN – Belgian Nuclear Research Center • The leader • Thales Alenia Space ETCA • UCL - Université Catholique de Louvain • IMEC – Interuniversity Micro-Electronics Center • BIRA-IASB – Belgian Institute for Space Aeronomy RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  4. Sponsors Thank you to . . . • IEEE Benelux • Thales Alenia Space ETCA • Thales Research and Technology RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  5. Organizing CommitteeBenoît Brichard (SCKCEN) RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  6. Technical CommitteeCor Claeys (IMEC) RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  7. Short-CourseSylvain Girard (CEA) • J. Barth (NASA) • Evolution of the radiation environments • G. Berger (UCL) -- V. Poujet (CNRS – IMS Lab) • Experimental tools to simulate radiation environments and radiation effects • P. Truscott (Qinetiq) • Radiation transport model and software • A. Paccagnella & S. Gerardin (Univ. Padova) • Basics of radiation effects in electronic devices • N. Richard (CEA) -- A. Slugher (Univ. College of London) • Simulation of radiation effects at the atomic scale: theory and examples of applications • R. A. Weller, R. D. Schrimpf, R. A. Reed, M. H. Mendenhall, K. M. Warren, B. D. Sierawski and L. W. Massengill (Univ. Vanderbilt) • Monte-Carlo simulation of single-event effects • P. Dodd (Sandia NL) • New challenges for the future RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  8. Paper distribution • Submitted abstracts : 150 abstracts • Regular: 130 • Late News: 24 • Rejection rate: ~ 26 % • 111 papers selected (2 widthdraws) • 49 oral • 62 posters RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  9. Participation & Registrations • Full audience: 348 • This figure includes all people drained by the Conference and/or Industrial Exhition and/or Short-Course. • New Try Out: 1-day ticket to technical exhibition only - 21 • Technical Conference: 303 • Short-Course: 159 • Industrial Booth: 23 + 1 (NSREC-RADECS-IEEE) • Gala Dinner: 309 • Countries: 26 RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  10. Repartition by Countries • Top 3: FRANCE – USA - BELGIUM RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  11. Expenses Break-Downinvoiced by PCO-Medicongress • Main final invoice to SCKCEN: 218.632,03 € (VAT 21 %) RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  12. Financial Balance • Total Revenue : +238.028,28 € • Other invoices : -14.050,91 € • Main final invoice : -218.632,03 € • Cotisation RADECS : -8700 € (348 x 25€) • Balance : lightly negative RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  13. AWARDS – RADECS 2009 Best Data Workshop Low Dose Rate Test Results of National Semiconductors ELDRS-free Bipolar Comparators LM111 and LM119 K. Kruckmeyer, L. McGee, B. Brown, L. Miller - National Semiconductor Low dose rate and high dose rate data and drift calculations are presented for National Semiconductors “ELDRS-free” bipolar comparators, LM111 and LM119, and compared to older versions of the products. RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  14. AWARDS – RADECS 2009 Best Poster Paper An Approach to Single Event Testing of SDRAMs P.C. Adell1, L. Edmonds1, R. McPeak2, L. Scheick1, S.S. McClure1 1Jet Propulsion Laboratory; 2Consultant A testing approach based on error-pattern identification with a graphical mapping and color coding of the full SDRAM during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed. RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  15. AWARDS – RADECS 2009 Best Oral Paper A-1 Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors I.S. Esqueda1, H.J. Barnaby1, F.E. Mamouni2, R.D. Schrimpf2 1Arizona Univ.; 2Vanderbilt Univ. The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on width (Wd). RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  16. Meritous paper Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak J.A. Pellish1, M.A. Xapsos1, K.A. LaBel1, P.W. Marshall2, D.F. Heidel3, K.P. Rodbell3, M.C. Hakey4, P.E. Dodd5, M.R. Shaneyfelt5, J.R. Schwank5, R.C. Baumann6, X. Deng6, A. Marshall6, B.D. Sierawski7, J.D. Black7, R.A. Reed7, R.D. Schrimpf7, H.S. Kim8, M.D. Berg8, M.J. Campola8, M.R. Friendlich8, C.E. Perez8, A.M. Phan8, C.M. Seidleck8 1NASA Goddard Space Flight Center; 2NASA consultant; 3IBM; 4IBM System and Technology Group; 5Sandia National Laboratories; 6Texas Instruments; 7Vanderbilt Univ.; 8MEI Technologies A 1 GeV/u 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak. RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  17. PALAU PRICE A new Approach in Characterizing the Response of Silicon p-i-n diodes used as Radiation Monitoring Sensors J. Mekki1, M. Moll1, M. Fahrer1, M. Glaser1, L. Dusseau2 1CERN; 2University Montpellier II In this work the effect of radiation damage on Silicon p-i-n diodes have been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3x1013 neq/cm2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation. RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  18. Proceedings • Not yet edited • Edition foreseen electronically (CDROM) • Need further discussion with SC RADECS • Recurrent problem : some authors does not submit their paper although the attend the conference. What to do then ? RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  19. To say simply thanks ! • It is not possible to cite and thanks all the people from RADECS and NSREC that took part in this adventure. They are numerous and generous ! The success of RADECS results from their commitment. • It was a great human experience that I could not have accomplished without them. • General Chairman RADECS 2009 – Benoît Brichard RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

  20. RADECS Steering Committee - Seville RADECS 2009 debriefing – 17 03 2010

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