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Oxide Growth in Microelectronics Processing Lab: Comparative Analysis and Variation

This study analyzes the wet and dry oxide growth in a microelectronics processing lab. Theoretical oxide thickness is calculated and compared with experimental data. The effects of temperature, oxidant variation, and wafer position in the furnace are investigated. Results show variations in oxide thickness on the wafer, with wet oxide exhibiting greater variations compared to dry oxide.

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Oxide Growth in Microelectronics Processing Lab: Comparative Analysis and Variation

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  1. Micro Electronics Processing Lab Wet and Dry Oxide Growth Team 1B Sudipta Bera Matthew Berg Cooper Swenson Glenda Anderson Dana Olson

  2. Introduction • RCA Clean • Theoretical Oxide Thickness Calculated • 2 Different Sets of Data 2 1 2 3 4 5 6 1 3 Group 1B Group 2B

  3. Concentration Gradient In Furnace Gas Inlet CA inlet Concentration of oxidizing gas decreases as it reacts with Silicon surface Wafer Position 4 Wafer Position 3 Wafer Position 2 CA inlet > CA outlet Wafer Position 1 CA outlet Front Of Furnace

  4. Results Theoretical Thickness 530 A

  5. Results Theoretical Thickness 1250 A

  6. Diffusion Of Gas Stagnant Gas Layer SiO2 Si Substrate Diffusion of O2 or H2O

  7. Results Theoretical Thickness 5299 A

  8. Results Theoretical Thickness 6610 A

  9. Conclusions • Temperature and Oxidant Effects • Position in Furnace has Large Impact on oxide thickness • Random Growth on Wafers • Variations From Theoretical Calculations Group B1 Group B2 Theoretical 530 5299 1250 6610 Average 560 2500 1000 4250 (Dry) (Wet) (Dry) (Wet)

  10. Variation Of Oxide Thickness On Wafer • Wafers have thin initial layer of oxide before heating. • During heating, oxidizing gas will diffuse through initial layer and grow in non-uniform manner. • Regions of thin initial oxide layer will grow fastest and regions of thick initial oxide layer will grow slowest. • Variations in thickness for wet oxide are greater than dry oxide due to faster diffusion rate of H2O.

  11. Average Thickness On Wafer – Group 2B Wet Oxide

  12. Average Thickness On Wafer – Group 2B Dry Oxide

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