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Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design. Donald A. Neamen Chapter 5 The Bipolar Junction Transistor. In this chapter, we will:. Discuss the physical structure and operation of the bipolar junction transistor.

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Microelectronics Circuit Analysis and Design

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  1. Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 5 The Bipolar Junction Transistor

  2. In this chapter, we will: • Discuss the physical structure and operation of the bipolar junction transistor. • Understand the dc analysis and design techniques of bipolar transistor circuits. • Examine three basic applications of bipolar transistor circuits. • Investigate various dc biasing schemes of bipolar transistor circuits, including integrated circuit biasing. • Consider the dc biasing of multistage or multi-transistor circuits.

  3. Cross Section of Integrated Circuit npn Transistor

  4. Modes of Operation • Forward-Active • B-E junction is forward biased • B-C junction is reverse biased • Saturation • B-E and B-C junctions are forward biased • Cut-Off • B-E and B-C junctions are reverse biased • Inverse-Active (or Reverse-Active) • B-E junction is reverse biased • B-C junction is forward biased

  5. npn BJT in Forward-Active

  6. Electrons and Holes in npn BJT

  7. Electrons and Holes in pnp BJT

  8. Circuit Symbols and Current Conventions

  9. Current Relationships

  10. Common-Emitter Configurations

  11. Common-Base Configuration

  12. Current-Voltage Characteristics of a Common-Base Circuit

  13. Current-Voltage Characteristics of a Common-Emitter Circuit

  14. Early Voltage/Finite Output Resistance

  15. Effects of Leakage Currents on I-V Characteristics

  16. Effect of Collector-Base Breakdown on Common Base I-V Characteristics

  17. Effect of Collector-Base Breakdown on Common Emitter I-V Characteristics

  18. DC Equivalent Circuit for npn Common Emitter

  19. DC Equivalent Circuit for pnp Common Emitter

  20. Load Line

  21. Problem-Solving Technique:Bipolar DC Analysis • Assume that the transistor is biased in forward active mode • VBE = VBE(on), IB > 0, & IC = bIB • Analyze ‘linear’ circuit. • Evaluate the resulting state of transistor. • If VCE > VCE(sat), assumption is correct • If IB < 0, transistor likely in cutoff • If VCE < 0, transistor likely in saturation • If initial assumption is incorrect, make new assumption and return to Step 2.

  22. Voltage Transfer Characteristic for npn Circuit

  23. Voltage Transfer Characteristic for pnp Circuit

  24. Digital Logic Inverter NOR gate

  25. Bipolar Inverter as Amplifier

  26. Effect of Improper Biasing on Amplified Signal Waveform

  27. Single Base Resistor Biasing

  28. Common Emitter with Voltage Divider Biasing and Emitter Resistor

  29. Integrated Circuit Biasing

  30. Multistage Cascade Transistor Circuit

  31. Multistage Cascode Transistor Circuit

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