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Proton Radiation Damage in P-Channel CCDs Fabricated on High-Resistivity Silicon.

Preferred Customer:. Preferred Customer:. Proton Radiation Damage in P-Channel CCDs Fabricated on High-Resistivity Silicon. C. Bebek, D. Groom, S. Holland, A. Karcher , W. Kolbe, J. Lee, M. Levi, N. Palaio, B. Turko, M. Uslenghi, M. Wagner, G. Wang Lawrence Berkeley National Laboratory.

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Proton Radiation Damage in P-Channel CCDs Fabricated on High-Resistivity Silicon.

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  1. Preferred Customer: Preferred Customer: Proton Radiation Damage in P-Channel CCDs Fabricated on High-Resistivity Silicon. C. Bebek, D. Groom, S. Holland, A. Karcher, W. Kolbe, J. Lee, M. Levi, N. Palaio, B. Turko, M. Uslenghi, M. Wagner, G. Wang Lawrence Berkeley National Laboratory Armin Karcher, LBNL IEEE/NSS 2001

  2. Overview • High-Resistivity CCDs • Performance Parameters • Irradiation • Results • Comparison to Conventional CCDs • Conclusion Armin Karcher, LBNL IEEE/NSS 2001

  3. High-Resistivity CCDs Armin Karcher, LBNL IEEE/NSS 2001

  4. High-Resistivity CCDs Armin Karcher, LBNL IEEE/NSS 2001

  5. Performance Parameters • Charge Transfer Efficiency (CTE) CTE becomes critical in large CCDs. Smaller CCDs would mean higher complexity in mosaic cameras. Radiation damage reduces CTE, making radiation tolerant CCDs essential for extended space missions. • Dark Current Dark current can limit the usefulness of long exposures. It is a volume effect, stemming from thermal generation in the bulk silicon. High purity silicon and low operating temperatures along with a gettering process reduce dark current. Armin Karcher, LBNL IEEE/NSS 2001

  6. Irradiation • 2 sets of 4 CCDs each were irradiated. One set incorporated an additional channel implant, reducing lateral charge movement to reduce CTE degradation. • Applied doses of 5x109, 1x1010, 5x1010 and 1x1011 protons/cm2 at 12 MeV. The highest dose corresponds to 300 years in a high earth orbit! • Devices were irradiated at room temperature without power. Armin Karcher, LBNL IEEE/NSS 2001

  7. CTE Measurement Armin Karcher, LBNL IEEE/NSS 2001

  8. CTE Results Armin Karcher, LBNL IEEE/NSS 2001

  9. Improved Radiation Tolerance on “notch” implant devices Armin Karcher, LBNL IEEE/NSS 2001

  10. CTE Dependence on Temperature Armin Karcher, LBNL IEEE/NSS 2001

  11. Dark Current Degradation Armin Karcher, LBNL IEEE/NSS 2001

  12. Dark Current vs Temperature Dark Current vs Temperature 9 2 for CCD after 5x10 protons/cm 100000 208 K 10000 /h) - 1000 100 Dark Current (e 10 158 K e-0.609 eV/kT 1 0.1 50 60 70 80 90 100 1/kT (eV) Armin Karcher, LBNL IEEE/NSS 2001

  13. Comparison to Conventional CCDs [1]L.Cawley, C.Hanley, “WFC3 Detector Characterization Report #1: CCD44 Radiation Test Results,” Space Telescope Science Institute Instrument Science Report WFC3 2000-05, Oct.2000 [2] T. Hardy, R. Murowinski, M.J. Deen, “Charge transfer efficiency in proton damaged CCDs,” IEEE Trans. Nucl. Sci., 45(2), pp. 154-163, April 1998 Armin Karcher, LBNL IEEE/NSS 2001

  14. Conclusion • P-channel high-resistivity CCDs show remarkable radiation tolerance against CTE degradation. • Dark current remains low even after proton doses equivalent to decades in space. Armin Karcher, LBNL IEEE/NSS 2001

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