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Ganging of DSSDs Some Remarks

Ganging of DSSDs Some Remarks. SVD meeting. Noise Calculation. Can we really assume S/N  1/ (Number DSSD) ? APV25: ENC = 250 e + 36 e/pF Sensor capacitance is main noise source Ganging of 2 sensors doubles the capacitive load n-side: Origami PA0 is very short

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Ganging of DSSDs Some Remarks

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  1. Gangingof DSSDsSomeRemarks Christian Irmler (HEPHY Vienna) SVD meeting

  2. Noise Calculation • Can we really assume S/N  1/(Number DSSD) ? • APV25: ENC = 250 e + 36 e/pF • Sensor capacitance is main noise source • Ganging of 2 sensors doubles the capacitive load • n-side: • Origami PA0 is very short • For ganging a much longer PA is required • Not negligible additional capacitance and thus noise • Also increase of Rs and its noise contribution ? Christian Irmler (HEPHY Vienna)

  3. JP_Module 2007 • Two 4” DSSDs partially ganged, • Kapton made by Casio • Comparison single and 2 ganged sensors Christian Irmler (HEPHY Vienna)

  4. JP_Module Photos Christian Irmler (HEPHY Vienna)

  5. JP_Module Beam Test Results (2008) Sensor dimmensions: • 4“ SVD2.5 DSSD from HPK • n-side: 152 µm pitch, ~27 mm striplength • p-side: 51 µm pitch, ~78 mm striplength Results: • Poor SNR forgangedsensors: n-side ~10, p-side ~8.5 • 6“ DSSD: wider pitch, but longerstrips Christian Irmler (HEPHY Vienna)

  6. Space between Sensor edgeand Shell • Even with ganged sensors the space between sensor edge and outer shell is less than 1mm! • Wire bonds might touch the surface of shell Christian Irmler (HEPHY Vienna)

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