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Lecture 4 Design Rules,Layout and Stick Diagram. Pradondet Nilagupta pom@ku.ac.th Department of Computer Engineering Kasetsart University. Acknowledgement.
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Lecture 4Design Rules,Layout and Stick Diagram Pradondet Nilagupta pom@ku.ac.th Department of Computer Engineering Kasetsart University
Acknowledgement • This lecture note has been summarized from lecture note on Introduction to VLSI Design, VLSI Circuit Design all over the world. I can’t remember where those slide come from. However, I’d like to thank all professors who create such a good work on those lecture notes. Without those lectures, this slide can’t be finished. 204424 Digital Design Automation
Roadmap for the term: major topics • VLSI Overview • CMOS Processing & Fabrication • Components: Transistors, Wires, & Parasitics • Design Rules & Layout • Combinational Circuit Design & Layout • Sequential Circuit Design & Layout • Standard-Cell Design with CAD Tools • Systems Design using Verilog HDL • Design Project: Complete Chip 204424 Digital Design Automation
n well P substrate wafer Review - CMOS Mask Layers • Determine placement of layout objects • Color coding specifies layers • Layout objects: • Rectangles • Polygons • Arbitrary shapes • Grid types • Absolute (“micron”) • Scaleable (“lambda”) 204424 Digital Design Automation
Mask Generation • Mask Design using Layout Editor • user specifies layout objects on different layers • output: layout file • Pattern Generator • Reads layout file • Generates enlarged master image of each mask layer • Image printed on glass • Step & repeat camera • Reduces & copies image onto mask • One copy for each die on wafer • Note importance of mask alignment 204424 Digital Design Automation
Symbolic Mask Layers • Key idea: • Reduce layers to those that describe design • Generate physical layers as needed • Magic Layout Editor: "Abstract Layers” • metal1 (blue) - 1st layer metal (equiv. to physical layer) • Poly (red) - polysilicon (equivalent to physical layer) • ndiff (green) - n diffusion (combination of active, nselect) • ntranistor (green/red crosshatch) - combined poly, ndiff • pdiff (brown) - p diffusion (combination of active, pselect) • ptransistor (brown/red crosshatch) - combined poly, pdiff • contacts: combine layers, cut mask 204424 Digital Design Automation
About Magic • Scalable Grid for Scalable Design Rules • Grid distance: l (lambda) • Value is process-dependent: l = 0.5 X minimum transistor length • Painting metaphor • Paint squares on grid for each mask layer • Layers to interact to form components (e.g. transistors) 204424 Digital Design Automation
Mask Layers in Magic • Poly (red) • N Diffusion (green) • P Diffusion (brown) • Metal (blue) • Metal 2 (purple) • Well (cross-hatching) • Contacts (X) 204424 Digital Design Automation
Cursor Box Paint (poly) Paint (ntransistor) Paint (pdiff) Magic User-Interface • Graphic Display Window • Cursor • Box - specifies area to paint • Command window (not shown) • accepts text commands:paint poly:paint red:paint ndiff:paint green:write • prints error & status messages 204424 Digital Design Automation
Layer Interaction in Magic • Transistors - where poly, diffusion cross • poly crosses ndiffusion - ntransistor • poly crosses pdiffusion - ptransistor • Vias - where layers connect • Metal 1 connecting to Poly - polycontact • Metal 1 connecting to P-Diffusion (normal) - pdc • Metal 1 connecting to P-Diffusion (substrate contact) - psc • Metal 1 connecting to N-Diffusion (normal) - ndc • Metal 1 connecting to N-Diffusion (substrate contact) - nsc • Metal 1 connecting to Metal 2 - via 204424 Digital Design Automation
nsc p-transistor metal1 nwell pdc polycontact metal1 poly polycontact poly metal1 psc ndc ndc ntransistor Magic Layers - Example 204424 Digital Design Automation
Why we need design rules • Masks are tooling for manufacturing. • Manufacturing processes have inherent limitations in accuracy. • Design rules specify geometry of masks which will provide reasonable yields. • Design rules are determined by experience. 204424 Digital Design Automation
Manufacturing problems • Photoresist shrinkage, tearing. • Variations in material deposition. • Variations in temperature. • Variations in oxide thickness. • Impurities. • Variations between lots. • Variations across a wafer. 204424 Digital Design Automation
Transistor problems • Varaiations in threshold voltage: • oxide thickness; • ion implanatation; • poly variations. • Changes in source/drain diffusion overlap. • Variations in substrate. 204424 Digital Design Automation
Wiring problems • Diffusion: changes in doping -> variations in resistance, capacitance. • Poly, metal: variations in height, width -> variations in resistance, capacitance. • Shorts and opens: 204424 Digital Design Automation
Oxide problems • Variations in height. • Lack of planarity -> step coverage. metal 2 metal 2 metal 1 204424 Digital Design Automation
Via problems • Via may not be cut all the way through. • Undesize via has too much resistance. • Via may be too large and create short. 204424 Digital Design Automation
MOSIS SCMOS design rules • Designed to scale across a wide range of technologies. • Designed to support multiple vendors. • Designed for educational use. • Ergo, fairly conservative. 204424 Digital Design Automation
and design rules • is the size of a minimum feature. • Specifying particularizes the scalable rules. • Parasitics are generally not specified in units 204424 Digital Design Automation
Design Rules • Typical rules: • Minumum size • Minimum spacing • Alignment / overlap • Composition • Negative features 204424 Digital Design Automation
Types of Design Rules • Scalable Design Rules (e.g. SCMOS) • Based on scalable “coarse grid” - l (lambda) • Idea: reduce l value for each new process, but keep rules the same • Key advantage: portable layout • Key disadvantage: not everything scales the same • Not used in “real life” • Absolute Design Rules • Based on absolute distances (e.g. 0.75µm) • Tuned to a specific process (details usually proprietary) • Complex, especially for deep submicron • Layouts not portable 204424 Digital Design Automation
SCMOS Design Rules • Intended to be Scalable • Original rules: SCMOS • Submicron: SCMOS-SUBM • Deep Submicron: SCMOS-DEEP • Pictorial Summary: Book Fig. 2-24, p. 27 • Authoritative Reference: www.mosis.org 204424 Digital Design Automation
SCMOS Design Rule Summary • Line size and spacing: • metal1: Minimum width=3l, Minimum Spacing=3l • metal2: Minimum width=3l, Minimum Spacing=4l • poly: Minimum width= 2l, Minimum Spacing=2l • ndiff/pdiff: Minimum width= 3l, Minimum Spacing=3l, minimum ndiff/pdiff seperation=10l • wells: minimum width=10l, min distance form well edge to source/drain=5l • Transistors: • Min width=3l • Min length=2l • Min poly overhang=2l 204424 Digital Design Automation
SCMOS Design Rule Summary • Contacts (Vias) • Cut size: exactly 2l X 2l • Cut separation: minimum 2l • Overlap: min 1l in all directions • Magic approach: Symbolic contact layer min. size 4l X 4l • Contacts cannot stack (i.e., metal2/metal1/poly) • Other rules • cut to poly must be 3l from other poly • cut to diff must be 3l from other diff • metal2/metal1 contact cannot be directly over poly • negative features must be at least 2l in size • CMP Density rules (AMI/HP subm): 15% Poly, 30% Metal 204424 Digital Design Automation
Design Rule Checking in Magic • Design violations displayed as error paint • Find which rule is violated with ":drc why” Poly must overhang transistor by at least 2 (MOSIS rule #3.3) 204424 Digital Design Automation
Scaling Design Rules • Effects of scaling down are positive • See book, p. 78-79 - if “everything” scales, scaling circuit by 1/x increases performance by x • Problem: not everything scales proportionally 204424 Digital Design Automation
Aside - About MOSIS • MOSIS - MOS Implementation Service • Rapid-prototyping for small chips • Multi-project chip idea - several designs on the same wafer • Reduced mask costs per design • Accepts layout designs via email • Brokers fabrication by foundries (e.g. AMI, Agilent, IBM, TSMC) • Packages chips & ships back to designers • Our designs will use AMI 1.5µm process (more about this later) 204424 Digital Design Automation
Aside - About MOSIS • Some Typical MOSIS Prices (from www.mosis.org) • AMI 1.5µm “Tiny Chip” (2.2mm X 2.2mm) $1,080 • AMI 1.5µm 9.4mm X 9.7mm $17,980 • AMI 0.5µm 0-5mm2 $5,900 • TSMC 0.25µm 0-10mm2 $15,550 • TSMC 0.18µm 0-7mm2 $24,500 • TSMC 100-159mm2 $63,250 + $900 X size • MOSIS Educational Program (what we use) • AMI 1.5µm “Tiny Chip” (2.2mm X 2.2mm) FREE* • AMI 0.5mm “Tiny Chip” (1.5mm X 1.5mm) FREE* *sponsored by Semiconductor Industry Assn., Semiconductor Research Corp., | AMI, Inc., DuPont Photomasks, and MOSIS 204424 Digital Design Automation
Layout Considerations • Break layout into interconnected cells • Use hierarchy to control complexity • Connect cells by • Abutment • Added wires • Key goals: • Minimize size of overall layout • Meet performance constraints • Meet design time deadlines 204424 Digital Design Automation
Hierarchy in Layout • Chips are constructed as a hierarchy of cells • Leaf cells - bottom of hierarchy • Root cells - contains overall cell • Example - hypothetical “UART” • Pad frame - “ring” that contains I/O pads • Core - contains logic organized as subcells • Shift register • FSM • Other cells 204424 Digital Design Automation
Hierarchy Example • Root Cell: UART 204424 Digital Design Automation
Wires metal 3 6 metal 2 3 metal 1 3 pdiff/ndiff 3 poly 2 204424 Digital Design Automation
Transistors 2 2 3 3 1 5 204424 Digital Design Automation
Vias • Types of via: metal1/diff, metal1/poly, metal1/metal2. 4 4 1 2 204424 Digital Design Automation
Metal 3 via • Type: metal3/metal2. • Rules: • cut: 3 x 3 • overlap by metal2: 1 • minimum spacing: 3 • minimum spacing to via1: 2 204424 Digital Design Automation
Tub tie 4 1 204424 Digital Design Automation
Spacings • Diffusion/diffusion: 3 • Poly/poly: 2 • Poly/diffusion: 1 • Via/via: 2 • Metal1/metal1: 3 • Metal2/metal2: 4 • Metal3/metal3: 4 204424 Digital Design Automation
Overglass • Cut in passivation layer. • Minimum bonding pad: 100 m. • Pad overlap of glass opening: 6 • Minimum pad spacing to unrelated metal2/3: 30 • Minimum pad spacing to unrelated metal1, poly, active: 15 204424 Digital Design Automation
Stick diagrams (1/3) • A stick diagram is a cartoon of a layout. • Does show all components/vias (except possibly tub ties), relative placement. • Does not show exact placement, transistor sizes, wire lengths, wire widths, tub boundaries. 204424 Digital Design Automation
Stick Diagrams (2/3) • Key idea: "Stick figure cartoon" of a layout • Useful for planning layout • relative placement of transistors • assignment of signals to layers • connections between cells • cell hierarchy 204424 Digital Design Automation
Stick Diagrams (3/3) 204424 Digital Design Automation
Example - Stick Diagrams (1/2) Alternatives - Pull-up Network Circuit Diagram. Pull-Down Network (The easy part!) Complete Stick Diagram 204424 Digital Design Automation
Example - Stick Diagrams (2/2) 204424 Digital Design Automation
Dynamic latch stick diagram VDD in out VSS phi phi’ 204424 Digital Design Automation
Stick Diagram XOR Gate Examples 204424 Digital Design Automation
Hierarchical Stick Diagrams • Define cells by outlines & use in a hierarchy to build more complex cells 204424 Digital Design Automation
Cell Connection Schemes • External connection - wire cells together • Abutment - design cells to connect when adjacent • Reflection, mirroring - use to make abutment possible 204424 Digital Design Automation
Example: 2-input multiplexer • First cut: 204424 Digital Design Automation
Sticks design of multiplexer • Start with NAND gate: 204424 Digital Design Automation
NAND sticks VDD a out b VSS 204424 Digital Design Automation