Rapid Power MOSFET Switching

1. Rapid Power MOSFET Switching US Patent #7378898 ComLSI, Inc

2. Oct. 23, 2009 ComLSI, Inc. 2 Rapid Power MOSFET Switching Higher bandwidth at higher efficiency is a continuing requirement in power conversion and power management electronics, given the continuing trend toward more compact and portable systems. A constraint for efficient power management circuits is speed at which power transistors can be switched and energy consumed in switching these transistors ON and OFF. Patent 7378898 teaches switching commonly employed MOSFET power transistors at high frequencies with reduced conduction and switching loss. The technique applies to all DC-DC and POL power conversion products with combined TAM exceeding multi-Billion $$. The technique may also be employed to speed switching of Power Gating MOSFET devices embedded in chips, as well as in Active Noise regulators, a strategic product for ultra-low-voltage systems. US Patent #7378898 protects the only known circuit solution to improving MOSFET power transistor switching. The patent execution history is clean with thorough prosecution by the USPTO. No obligations or encumbrances exist.

3. Oct. 23, 2009 ComLSI, Inc. 3 Applications of RPTS: ANR Active Noise Regulators (ANR�s), and symbiotic high-frequency switched power converters maintain power integrity in rapidly switched regions of a ULSI device, permitting ultra-low-voltage operation and corresponding low energy consumption. Size: comparable to IDC caps on a processor package (< 1mm^2), fabricated in a process 2 to 3 gens. behind the USLI component; scales with capacitors used Cost: for 1mm^2 area, @ $600/8� wfr, ~90% yield, CSP/WFLCSP ? $0.05 Cost � low volume: for the same device above, ~$0.10 Electrical specs.: 40 to 100MHz converters / noise suppression frequency estimated feasible (ref: Intel� CMOS Voltage Regulator design effort, �Accelerated Regulation�) ANR patent: Active interposer: US 7291896 also available. More info on ANR�s

4. Oct. 23, 2009 ComLSI, Inc. 4 Applications of RPTS: DC-DC DC to DC converters (RED blocks in a portable system architecture shown) employ switched MOSFETs for high-side (HS) and low-side (LS) function in buck, boost, and buck-boost converters. Both HS and LS conduction and switching losses diminish DC-DC efficiency. RPTS significantly reduces HS and LS switching and IL2�RON conduction losses Size: dependent upon type of device, operating voltages, desired �ON� resistance and gate charge, current carrying capacity, and packaging Electrical aspects: Simultaneous RDSON and QG reduction with RPTS Manufacturing: FET body node not shorted with source, package pin used, pkg cost adder ~$0.005.

5. Oct. 23, 2009 ComLSI, Inc. 5 Applications: Power Gating Power gating switches employed for Voltage Domains (different colors in the system block diagram shown) in nanoscale SoC�s and processors for leakage shut-off. RPTS reduces Power Gating energy loss and enhances speed / frequency of gating Size: Reduced RDSON reduces power gating device area overhead on chip Performance: QG reduction with RPTS increases power gating frequency and chip energy savings Design / Manufacturing: Body bias circuit reference area, 1 per chip

6. Oct. 23, 2009 ComLSI, Inc. 6 Other & emerging applications Solid-state lighting/dimming Motor drive electronics