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Case I: Design of experimental optimization for ULSI CMP process applications

Case I: Design of experimental optimization for ULSI CMP process applications. Sung-Woo Park a , Chul-Bok Kim b , Sang-Yong Kim c , Yong-Jin Seo a,* A Department of Electrical Engineering , Daebul University , 72- 1, Sanho , Samho , Youngam , Chonnam , 526- 702, South Korea

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Case I: Design of experimental optimization for ULSI CMP process applications

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  1. Case I: Design of experimental optimization for ULSI CMP process applications Sung-Woo Park a , Chul-Bok Kim b , Sang-Yong Kim c , Yong-Jin Seo a,* ADepartment of Electrical Engineering , Daebul University , 72- 1, Sanho , Samho , Youngam , Chonnam , 526- 702, South Korea BDong Sung A &T Co ., Kyunggi 429- 450, South Korea cFAB . Division , ANAM Semiconductor Co ., Inc ., Kyunggi 420- 040, South Korea

  2. Background • 當電子元件收縮到深次微米區域，化學機械拋光 （CMP）在ULSI製程中對多層次連接的平坦度上非常重要的程序。 • 移除率(remove rate)和非均一性(non-uniformity)方面是主要的製程效能與品質指標。 • 運用實驗設計方法將 CMP 儀器參數予以最佳化。 • 以高移除率和較低的非均一性觀點檢查製程參數，並決定最佳的 CMP 參數。

  3. Experiments • 實驗機台: CMP polisher (精拋機) • 控制因子: • Slurry flow rate :以含有SiO顆粒及KOH填補研磨空隙,防止應力破壞。 研磨後，以純水及旋轉方式清洗表面。 • Table and Head speed :兩者研磨轉速。 • Down force :將晶圓下壓的力量。

  4. Flow rate>90 阻礙remove rate Flow rate>60 非均一性變大

  5. Conclusions • 經過DOE之後﹐CMP 參數最佳化非均一性在4%以 下﹐Remove rate超過 2000° A/min 。 • 必須小心地設計Head/Table speed比例(1~2倍) 。 • What’s wrong?

  6. Case II: 光阻膜厚試驗 89.10.11~89.11.07

  7. Background • 目的：為使晶片上之金屬層形成我們所需的線路,覆蓋於金屬層上的光阻必須有一均勻的厚度以利後續的曝光(exposure),顯影(develop)及蝕刻(etchig)。本實驗的目的即針對AZ1500光阻特性尋找膜厚為4.5µ且均勻度最好的操作條件。 • 光阻塗佈工作流程: START→熱烤→降溫→光阻塗佈(旋開式)→熱烤→降溫→END

  8. 因子選取 • X1:烘烤溫度(上光阻前) Hot plate temperature (wafer) • X2:烘烤時間(上光阻前) Hot plate time (wafer) • X3:預轉轉速 Pre-spin speed • X4:預轉時間 Pre-spin time • X5:主轉轉速 Main spin speed • X6:主轉時間 Main spin time • X7:甩乾轉速 Dry spin speed • X8:甩乾時間 Dry spin time • X9:烘烤時間(上光阻後) Hot plate temperature ( after coating ) • X10:烘烤溫度(上光阻後) Hot plate time ( after coating )

  9. 其他因子 • 光阻量 • 降溫時間(上光阻前) • 預轉加速度時間 • 主轉加速時間 • 甩乾加速時間 • 降溫時間(上光阻後) • 氣壓壓力

  10. 反應變數 • 光阻厚度 ( 4.45µ ≦ film thickness ≦ 4.55μ) • 均勻度 ( uniformity≦1 % )

  11. 第一階段實驗 • 210-5+(nc=5) • 解析度III以上，可了解主因子作用。 • 中心點複製以估算實驗自然誤差。 • 實驗結果： thickness :主要影響因子 x5,x9 次要影響因子 x3,x4 uniformity:差異不明顯

  12. 第一階段ANOVA

  13. 第二階段實驗 • 反應曲面技術，使用CCD。 • 排除影響力最小的X4，3因子CCD，共20次實驗，每因子5水準，以估算2次曲線之適合度。 • Final Equation in Terms of Coded Factors: thickness =4.49 + 0.011 * A(x3) -0.063 * B(x5) -0.054 * C(x9) 因A(x3)作用不明顯,可視為實驗誤差, 此式可簡化為下列: thickness =4.49 -0.063 * B(x5) -0.054 * C(x9)

  14. 結論 操作條件： 設定 允許範圍 90-110 50-70 2000-2400 3-5 1875-1925 25-35 2800-3200 7-13 95-100 80-100

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