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GEM & THGEM Simulation (Garfield+Ansys+Maxwell)

GEM & THGEM Simulation (Garfield+Ansys+Maxwell). GDD Meeting May, the 21 st 2008 Matteo Alfonsi & Gabriele Croci. Outline. Standard GEM Simulation: Comparison between Maxwell and Ansys Testing Ansys: a “Linearity Test” THGEM RIM 0: Signal Simulation

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GEM & THGEM Simulation (Garfield+Ansys+Maxwell)

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  1. GEM & THGEM Simulation(Garfield+Ansys+Maxwell) GDD Meeting May, the 21st 2008 MatteoAlfonsi & Gabriele Croci

  2. Outline • Standard GEM Simulation: Comparison between Maxwell and Ansys • Testing Ansys: a “Linearity Test” • THGEM RIM 0: Signal Simulation • New MicroAvalanche Procedure in Standard GEM and in THGEM with Rim 0

  3. Standard GEM Simulation Garfield+Ansys Ed = 3.5 kV/cm; VGEM=440 V; Ei = 3.5 kV/cm Garfield+Maxwell Ed = 3.5 kV/cm; VGEM=440 V; Ei= 3.5 kV/cm

  4. Linearity Test: Scaling the voltage applied to the THGEM with respect the thickness Cylindrical GEM Ed = 0.5 kV/cm; VGEM=500 V; Ei= 3.0 kV/cm Thickness = 50 µm THGEM with Rim 0 Ed = 0.5 kV/cm; VGEM=4000 (500*8) V; Ei= 3.0 kV/cm Thickness = 400 (50*8)µm

  5. THGEM with Rim 0: Signals on Bottom Electrode and on Anode (1) Electron path through the hole Signal on Anode Signal on Bottom Electrode THGEM with Rim 0 Ed = 0.5 kV/cm; VTHGEM=1450 V; Ei = 3.0 kV/cm

  6. THGEM with Rim 0: Signals on Bottom Electrode and on Anode (2) Electron path ending on the Bottom Signal on Anode Signal on Bottom Electrode THGEM with Rim 0 Ed = 0.5 kV/cm; VTHGEM=1450 V; Ei = 3.0 kv/cm

  7. THGEM with Rim 0: Signals on Bottom Electrode and on Anode (3) ! Signal on Anode Ion path ending on Top Signal on Bottom Electrode ! THGEM with Rim 0 Ed = 0.5 kV/cm; VTHGEM=1450 V; Ei = 3.0 kv/cm

  8. Microavalanche Procedure: Standard GEM (1): Side View New Garfield Procedure to simulate avalanche correctly in MicroPattern Gas Detectors Field Map Generated with Maxwell Ed = 3.5 kV/cm; VGEM=440 V; Ei = 3.5 kV/cm Black Circles are secondary electrons production points It seems that there is a blank area in the centre

  9. Microavalanche Procedure: Standard GEM (2): Bottom View • Garfield+Maxwell • Ed = 3.5 kV/cm; VGEM=440 V; Ei= 3.5 kV/cm • Garfield+Ansys • Ed = 3.5 kV/cm; VGEM=440 V; Ei= 3.5 kV/cm One electron starting from the centre of the hole just above the top electrode Red Points are secondary electrons production points

  10. Microavalanche Procedure: THGEM with Rim 0: Bottom View One electron starting from the centre of the hole just above the top electrode THGEM with Rim 0 Ed = 0.5 kV/cm; VTHGEM=1450 V; Ei = 3.0 kV/cm Red Points are secondary electrons production points

  11. Spare Slides

  12. Microavalanche Procedure: Standard GEM (2): Bottom View Completed Avalanche

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