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Objective: Develop efficient InAs/GaSb IR detectors

MURI - Integrated Nanosensors Ivan K. Schuller – UCSD Characterization of InAs/GaSb Superlattices for IR Imaging. UCSD SUPREX Refinement of AFRL InAs/GaSb Superlattices. Strain Tuning Using Transition Layer. Objective: Develop efficient InAs/GaSb IR detectors

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Objective: Develop efficient InAs/GaSb IR detectors

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  1. MURI - Integrated NanosensorsIvan K. Schuller – UCSDCharacterization of InAs/GaSb Superlattices for IR Imaging UCSD SUPREX Refinement of AFRL InAs/GaSb Superlattices Strain Tuning Using Transition Layer Objective: Develop efficient InAs/GaSb IR detectors • InAs/GaSb superlattice employed in IR focal plane array detectors. Efficiency of the detector may be limited by coherence length. • Tune lattice spacing and coherence length using transition layers. • Develop quantitative method to characterize InAs/GaSb superlattices with transition layers to optimize MBE growth. • Potential Benefits to Air Force: • More efficient InAs/GaSb focal plane arrays • Faster development of materials for IR detectors • Quantitative characterization of AFRL grown materials • Results: • Suprex refinement method developed at UCSD used to analyze superlattices grown at AFRL. • Suprex refinement determines strain profiles of InAs/GaSb superlattices containing InSb transition layers. • 3. Minimum strain is obtained for ~0.5 monolayer InSb transition layer.

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