2005 ITRS Public Conference Emerging Research Materials Seoul, Korea December 13, 2005

1. 2005 ITRS Public Conference Emerging Research Materials Seoul, Korea December 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

2. ERM Participants Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ. Alex Bratkovski HP George Bourianoff Intel John Carruthers Port. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo Datta Purdue Univ. Alex Demkov U. Texas Steve Erwin NRL M. Garner Intel, Chair Bruno Ghyselen SOITECH Dan Herr SRC Susan Holl Intel Jim Hutchby SRC Berry Jonker NRL Gerhard Klemick Purdue Univ. Ted Kamins HP Richard Keihl U. Wisc. Phil Kuekes HP Louis Lome IDA Cons. Mark Lundstrom Purdue Kathryn Moler Stanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark Reed Yale Univ. Rafael Reif MIT Dave Robert Air Products Morley Stone DARPA Sadasivan Shankar Intel Shinichi Tagaki U of Tokyo Tom Theis IBM Jim Tour Rice Univ. Ruud Tromp IBM John Henry Scott NIST Eric Vogel NIST Victor Zhirnov SRC Igor Zutic NRL Kang Wang UCLA Rainer Waser Aacken U. Stan Williams HP In Kyeong Yoo Samsung

3. Gate S D Devices & Material Interplay Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & meff f(chirality & diameter) Critical Properties Material Properties

4. 1D charge state materials Molecular state materials Spin state materials Strongly correlated electron state materials Directed & self-assembly mechanisms Interface & contact materials and processes Nanomaterial Environmental, Safety, & Health Increased collaboration & coordination between synthesis, metrology and modeling University, Gov’t, National Labs & Industry Strategic Thrust

5. 1D charge state materials Control of properties, location & orientation Molecular state materials Understand transport & switching mechanisms Spin state materials Room temperature DMS materials, and spin gain Strongly correlated electron state materials Determine potential for novel device applications Directed & self-assembly of nano-structured materials Establish sub nm location and orientation control Interface & contact materials & processes Improved metrology & modeling for nm scale structure and material properties Key Goals

6. Control diameter, nano-structure, bandgap & electronic properties Control location & orientation 0 Charge State Device State Gate Gate 1 S S D D + + + + 1 Charge State 0 1D Material Challenges

7. Carbon Nanotube Material Progress Chemical Separation Of Metallic and semiconductor CNTs, N. Minami, 2005 Control of Properties Doping of CNT Sidewalls N. Minami, 1999 Control location & orientation Patterned Growth on Silicon, H. Dai 1998 E-Field Aligned Growth, H. Dai 2001 1991 Discovery Material Characterization & Improvement CNT’s Discovered, Iijima 1991 22nm Generation requires > 109 transistors/cm2

8. Understand the transport & switching mechanism Device State 0 1 1 0 Au Au Au Au O2N O2N - NH2 NH2 S S S S S S Au Au Au Au Charge Storage State Collective Conformational State Molecular State Neutral State Neutral State Molecular State Challenges

9. Backside FTIR C. Richter, 2005 Molecular State Material Progress Understand Transport & Switching Mechanisms STM Molecular Switching, M. Reed 1996 Inelastic Electron Tunneling Spectroscopy, M. Reed 2004 Understand Contact Formation & Interactions Complex contact & molecule interactions Molecular “Gadget”, 1974 Tools Emerging to Characterize Molecular State

10. Room temperature ferromagnetic semiconductors (T curie) Efficient Spin Injection Materials Properties to Support Spin Gain Spin State Challenges

11. Spin State Material Progress Overlapping Bound Magnetic Polarons, Coey, Nature 2005 Room temperature ferromagnetic semiconductors (T curie) Carrier mediated exchange Efficient Spin Injection Spin GAIN ????? Need Room Temp FM Semiconductor & Spin Gain

12. Strongly Correlated Electron State Materials Tokura Tokura • Materials exhibit complex phase relationships • Spin, charge, orbital ordering • Phase transitions can be induced by small perturbations • Magnetic field • Phonon • Charge Can these materials enable new device functions?

13. Fabricate reproducible sublithographic features Structures aligned to lithographic features Features scale to sub 5nm resolution Directed Self Assembly Challenges

14. Sublithographic Directed Self Assembly Lithography Isolated lines Periodic lines with variable pitch and size at different locations Lines (isolated & periodic) with right angles Isolated lines with T intersections Isolated openings (contacts or vias) Periodic openings with variable pitch and size Isolated rectangular contact openings Registration between different layers is most critical!!! Goal: Determine whether fundamental mechanisms can support Directed Self Assembly ofviable sublithographic structures

15. Directed Self Assembly Progress Di-block Copolymer self assembly of magnetic materials in a confined space. C. Ross, MIT Di-block Copolymer self assembly on patterned Molecular monolayer: Goal reduce LER P. Nealey, U. Wisc. Progress in aligning self assembled structures with lithographically defined structures

16. Nanomaterial ESH research needs Included in ESH Chapter Understand unique properties Detection metrology Nanomaterial management best practices Nanomaterial Environmental Safety & Health (ESH)

17. Material improvement is progressing, but…. Significant challenges for each material will require: Improved synthesis capabilities New metrology capabilities Improved materials models Improved interfaces Directed assembly processes Nanomaterial ESH research Summary Significant Collaboration is Required!!!