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2005 ITRS Public Conference Emerging Research Materials San Francisco, CA July 13, 2005

2005 ITRS Public Conference Emerging Research Materials San Francisco, CA July 13, 2005. Jim Hutchby – SRC Mike Garner – Intel. ERM Participants. Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ.

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2005 ITRS Public Conference Emerging Research Materials San Francisco, CA July 13, 2005

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  1. 2005 ITRS Public Conference Emerging Research Materials San Francisco, CA July 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

  2. ERM Participants Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ. Alex Bratkovski HP George Bourianoff Intel John Carruthers Port. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo Datta Purdue Univ. Alex Demkov U. Texas Steve Erwin NRL M. Garner Intel, Chair Bruno Ghyselen SOITECH Dan Herr SRC Susan Holl Intel Jim Hutchby SRC Berry Jonker NRL Gerhard Klemick Purdue Univ. Ted Kamins HP Richard Keihl U. Wisc. Phil Kuekes HP Louis Lome IDA Cons. Mark Lundstrom Purdue Kathryn Moler Stanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark Reed Yale Univ. Rafael Reif MIT Dave Robert Air Products Morley Stone DARPA Sadasivan Shankar Intel Shinichi Tagaki U of Tokyo Tom Theis IBM Jim Tour Rice Univ. Ruud Tromp IBM John Henry Scott NIST Eric Vogel NIST Victor Zhirnov SRC Igor Zutic NRL Kang Wang UCLA Rainer Waser Aacken U. Stan Williams HP In Kyeong Yoo Samsung

  3. Gate S D Devices & Material Interplay Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & meff f(chirality & diameter) Critical Properties Material Properties

  4. 1D charge state materials Molecular state materials Spin state materials Strongly correlated electron state materials Directed & self-assembly mechanisms Interface & contact materials and processes Increased collaboration & coordination between synthesis, metrology and modeling University, Gov’t, National Labs & Industry Strategic Thrust

  5. 1D charge state materials Control of properties, location & orientation Molecular state materials Understand transport & switching mechanisms Spin state materials Properties for room temperature operation, and spin gain Strongly correlated electron state materials Determine potential for novel device applications Directed & self-assembly of nano-structured materials Establish sub nm location and orientation control Interface & contact materials & processes Improved metrology & modeling for nm scale structure and material properties Key Goals

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