The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films

1. The Electrical and Band-Gap Properties ofAmorphous Zinc-Indium-Tin Oxide Thin Films In2O3 ZITO-30 ZITO-50 ZITO-70 25°C 200°C Deposition Temperature 400°C 10 20 30 40 50 60 70 80 2Ө Monica Olvera, Northwestern University, DMR 1121262 Cosubstitution Stabilizes Amorphous Phase For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition, cosubstitution stabilizes the amorphous phase. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which, respectively, 30%, 50% and 70% of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films grown at room temperature were amorphous whereas a pure indium oxide film was crystalline. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A higher temperature for the onset of crystallinity allows a larger window for the temperature of subsequent processes. In2O3: No cosubstitution ZITO-30: 30 at.% cosubstituted ZITO-50: 50 at.% cosubstituted ZITO-70: 70 at.% cosubstituted