2004 International Technology Roadmap for Semiconductors

1. 2004 International Technology Roadmap for Semiconductors Process Integration Devices and Structures Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public ConferenceJuly 14, 2004 San Francisco, CA, USA

2. Objectives • Use wireless IC as system / technology driver for ITRS • Address intersection of Si-based technologies with III-V compound semiconductors • Present technical challenges and requirements for AMS & RF IC technologies in wireless applications for cellular phones, WLAN/WPAN, automotive radar, and phased array RF systems, frequencies 0.8-100GHz • Divide Working Group into 4 sub-groups • Analog & Mixed Signal • RF Transceivers • PAs & Power Management • Millimeter Wave (10-100GHz)

3. Scope of Work Circuit functions of a typical mobile communication system 0.8-100GHz AA LNA AGC ADC filter VCO AMS RF Transceiver reference I,V,f clock tree ¸ N Digital Signal Processor f ref analog signal processor PA DAC PA&PM power control logic regulators

4. 2004 Organization 27 members (14 US, 7 Europe, 6 AP) Chair: Margaret Huang, Freescale Co-Chairs: Bin Zhao, Skyworks Jan-Erik Mueller, Infineon Editorial: Herbert Bennett, NIST Sub-Group (1): Analog & Mixed Signal Ralf Brederlow, Infineon (L) Margaret Huang, Freescale Sam Shichijo, TI Bin Zhao, Skyworks Hideo Aoyagi, Rohm Yukihiro Kiyota, Sony Takahiro Kamei, Oki Electric Dai Hisamoto, Hitachi 2004 New Members

5. 2004 Organization Sub-Group (2): RF Transceivers Marco Racanelli, Jazz (L) Peter Cottrell, IBM Sam Shichijo, TI Ralf Brederlow, Infineon Bin Zhao, Skyworks Ernesto Perea, STM C.S. Chang, TSMC Jordan Lai, TSMC Stefaan Decoutere, IMEC Sub-Group (3): PAs & Power Management Julio Costa, RFMD (L) Chuck Weitzel, Freescale (L) Dave Halchin, RFMD Jan-Erik Mueller, Infineon Rik Jos, Philips 2004 New Members

6. Organization Sub-Group (4): Millimeter Wave (10-100GHz) Tony Immorlica, BAE Systems (L) Ronald Grundbacher, Northrop Grumman Tom Kazior, Raytheon Minh Le, Vitesse Michael Schlechtweg, Fraunhofer Institute John Zolper, DARPA Herbert Bennett, NIST Herbert Zirath, Chalmers University 2004 New Members

7. 2004 Requirement Tables Updates Analog & Mixed Signal • Aligned Analog speed device to LSTP roadmap (vs. LOP roadmap in current table). • AMS technology introduction lags digital technology by less than half a year • Relaxes problems with reduced power supply voltages (degradation in SNR and signal distortion performance for AMS) • Better matching properties • It becomes ever more challenging to keep a constant gm / gds for high performance analog devices in new technologies • Relaxed high-k gate dielectrics 1/f noise color coding to YELLOW. However this topic remains challenging! • Published solution for high density capacitors meeting density, leakage, linearity and matching specifications suggested changes to capacitor density &/or color coding RF Transceivers • BiCMOS: introduced a lag between RFCMOS gate length and BiCMOS gate length in Long Term Table (similar to Near Term Table) • NPN fT, fMAX <350GHz change color coding reflecting published solution • RFCMOS: maintained 1 year lag from LSTP CMOS roadmap, changed color coding to yellow for NMOS fMAX >220GHz, update Noise Figure @ 5GHz • Passives: no major updates

8. 2004 Technology Requirement Tables Updates PAs & Power Management: Handset • No major changes. Major trends appear to have been correctly anticipated in 2003. • First two RFCMOS Dual Band GSM Power Amplifiers being sampled to cellular customers in 2004. Not expected to be a player in the market until 2005. However, RFCMOS could play a major role in 2006 and the success of RFCMOS PA’s may erode price margins at a faster rate than anticipated. • Multi Band cellular SiGe PA also being sampled. • Highly integrated modules with multi-layer laminates/LTCC dramatically reducing total RF front end area. PAs & Power Management: Basestation • Cost ($$/Watt) will decrease more rapidly than shown in the 2003 Roadmap reaching $0.40 per watt in 2008. • Saturated power density (W/mm) of all technologies will increase more rapidly reaching 1.4 W/mm, 1.8 W/mm, 3 W/mm, and 5 W/mm by 2008 for LDMOS, GaAs, SiC, and GaN, respectively. • Manufacturing solutions now exist for 28V GaAs FET’s, 60W SiC FET’s, and 28 V GaN FET’s. • Linear operation is now expected to achieve less than half the RF power of saturated operation. In the 2003 Roadmap linear operation was expected to achieve half the RF power of saturated operation.

9. 2004 Technology Requirement Tables Updates Millimeter Wave (10-100GHz) • No major changes. • Expect InP HBT devices to advance somewhat quicker than predicted due to aggressive R&D funding • ‘05-’06 coding changed from yellow to white • ‘07-’08 figures of merit more aggressive • expect introduction of Cu interconnects in ‘07 with continued use of Au and Al through ‘09

10. 2004 Cross-TWG Focus • Assembly & Packaging • RF module/SIP drives need for Chip & Package co-design • Embedded passivesRoadmap • Modeling and Simulation • Modeling for SOC (device/circuit/system) • Accurate, fast and predictive Analog/RF compact models • Computationally efficient physical models for carrier transport • Emerging Research Devices • RF/Analog performance with novel device structures • Design/Test • Design for reduced RF device/circuits characterization & test • Co-design flow of RF, analog and digital circuits • RF/analog/digital test for SoC system

11. Difficult Challenges • Signal isolation • Optimizing analog/RF CMOS devices with scaled technologies: mismatch, 1/f noise, and leakage with high-k gate dielectrics • High density integrated passive element scaling and use of new materials: Q-factor value for inductors; matching and linearity for capacitors • Reduced power supply voltages: degradation in SNR and signal distortion performance for AMS • Reduced device breakdown voltage in scaled technologies • Compound semiconductor substrates with good thermal dissipation and process equipment for fabrication at low cost • Difficulty and cost of integrating various analog/RF and digital functions on a chip or in a module • CAD solution for Integrated Radio SIP design (chip, passive, component, package, tool compatibility, model accuracies)

12. BACKUP

13. 2005 Planning • Working Group Structure • Separation from PIDS • Merge AMS and Transceiver Roadmaps/Tables • LSTP vs. LOP CMOS • RFCMOS, BiCMOS, integrated passives • Module roadmap (substrates, embedded passives) => Assy&Pkg • MEMS, BAW, Switch, Antenna ?? • Increase AP participation

14. Assembly & Packaging Cross-TWG • RF module/SIP drives need for Chip & Package co-design • Roadmap for embedded passives • Wireless specific : • RF module roadmap (PA, filter, switch, TRX, BAW, MEMS, passives) • SiP vs. SoC • Base station PAs: substitution of ceramic by plastic packages • mm-wave packaging • Flip chip • Thin dies • Thin packages/modules

15. Modeling and Simulation Cross-TWG • Modeling for SOC (device/circuit/system) • needs to be broken down to more specific problems • Signal/substrate isolation, cross talk • Electrical interference, e.g. “digital” noise, VCO spurs,.. • Accurate & efficient large signal models • Computationally efficient tools for evaluating complex digital modulation schemes (EDGE, CDMA, WCDMA, ..; ACPR, EVM, …) in ICs • Computationally efficient physical models for carrier transport • Previous decision not include III-V • Transport models • Previous decision not include III-V