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DSSD Status at TIFR

DSSD Status at TIFR. T. Aziz and K.K. Rao. Tata Institute of Fundamental Research, Mumbai. May 25, 2007. Two possible Designs are considered based on P-side readout. N-side has Atoll structure and common to both designs.

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DSSD Status at TIFR

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  1. DSSD Status at TIFR T. Aziz and K.K. Rao Tata Institute of Fundamental Research, Mumbai May 25, 2007

  2. Two possible Designs are considered based on P-side readout N-side has Atoll structure and common to both designs P-side will have 50% detectors as Double metal contact for readout Other 50% will have Single metal and therefore Kapton Flex based readout possibility This R&D is being pursued with Bharat Electronics Limited (BEL), Bangalore, India An agreement with BEL has been signed Mask Design in Progress, Suggestions may still be incorporated

  3. Double sided silicon detector specifications • Wafer crystal orientation : < 100 > • Type : FZ • Wafer thickness : 300 µm • Size : 4 inch • Resistivity : > 5 Kohm-cm • Breakdown voltage : > 300V • Polysilicon resistor value : > 4 Megaohms • Total Dark current : <= 2 microamps @ 100V • Dead strip fraction : < 1% on both sides • Area : 79600 x 28400 • Effective Area : 76800 x 25600

  4. Silicon Detector Specifications • N side:(Dimensions in Microns) • Number of strips : 512 Pitch : 50 N+ strip width : 12 N+ strip length : 76800 P stop with ATTOL structure • AC pads will be available on both sides of the strips. • Polyresistors will be placed for one strip on the one side and the adjacent strip on the opposite side. • Four short bias pads for bonding and two long bias pads for probing • Proving pad ( N – sub ) and serial number of strips on both sides

  5. Silicon Detector Specifications • P side : (Dimensions in Microns) • Number of strips : 1024 Number of Readout strips : 512 Pitch : 75 P+ strip width : 50 P+ strip length : 25600 • Readout strips will be 512 only for both double metal structure as well as without double metal structure • AC pads will be available on both sides of the strips but reading will be alternate strips only • With double metal structure readout will be 512 strips

  6. P side : (Continue) • Polyresistors will be placed for one strip on one side and the adjacent strip on the other side. • AC pad accessibility of the strips will be available with double metal structure and as well as without double metal structure ( provision for bonding with kapton flex) • We have two models for AC pad positioning , one on the strip itself and other one is away from the strip • Four short bias pads for bonding and two long bias pads for probing • Proving pad ( N – sub ) and serial number of strips on both sides

  7. P side N side Strip direction Strip direction 79600 +/- 20 79600 +/- 20 28400 +/- 20 28400 +/- 20 Unit : µm Double sided silicon detector

  8. N side Proving pad ( N- sub ) - 2 100 x 27000 AC pad 60 x 260 DC pad 83 40 70 300 51 DC DC AC AC Serial No. of strips Serial No. of strips 70 DC DC AC AC 70 70 DC DC AC AC 500 300 500 N+ strip length 76800 250 150 250 300 Pitch 50 N+ width 12 P stop widths 7,10,15 No. of strips 512 150 120 110 76726 70 300 70 1278 150 28400 79600 long Bias pads - 2 110 x 25744 Short Bias pads - 4 100 x 200 TIFR - DSSD

  9. 300 60 x 260 30 AC pad 60 x 260 15 5 AC pad 10 AC pad 40 60 x 260 Pitch = 50 Strip width = 12 Metal width = 10 N side AC pad dimensions TIFR - DSSD

  10. N side layout with P stop 40 10 10 N+ 12 8 300 10 4 120 110 10 6 70 6 AC pad DC pad Polysilicon P stop 10 Metal ( AL ) N+ Bias pad Guard Ring

  11. P side ( First Model ) 100 Strip serial numbers 70 70 100 110 20 300 DC pad 60 x 260 40 300 300 25504 25600 No. of strips : 1024 Pitch : 75 P+ width : 50 28400 AC pad 60 x 260 55 Strip serial numbers 79600 Proving pad( N – sub ) - 2 100 x 78400 Short bias pads – 4 100 x 200 Long bias pads – 2 110 x 76965

  12. 300 60 x 260 Readout strip 30 AC pad 60 x 260 AC pad 90 Readout strip 28 30 AC pad 56 40 60 x 260 Pitch = 75 Strip width = 50 Metal width = 56 P side AC pad dimensions This dimensions are for without double metal structure

  13. P side ( Second Model ) 100 Strip serial numbers 70 70 100 110 300 70 250 DC pad 40 300 300 25504 25600 No. of strips : 1024 Pitch : 75 P+ width : 50 28400 55 AC pad 60 x 260 Strip serial numbers 79600 Short bias pads – 4 100 x 200 Proving pad ( N – sub ) - 2 100 x 78400 Long bias pads – 2 110 x 76965

  14. DSSD P Side Double Metal structure 2nd metal 1st metal Sio2 P+ via N- bulk TIFR DSSD

  15. P side AC pad dimensions 300 60 x 260 30 AC pad 10 15 5 AC pad 60 x 260 40 30 AC pad Pitch (alternate strips) = 50 Double Metal width = 10 60 x 260 AC pad dimensions for double metal structure

  16. Present Status Design of Masks in Progress Modifications Possible By middle of June

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