1 / 39

Radiation Effects in SiGe Devices

Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler MURI Review: Vanderbilt University, Nashville, TN June 14, 2007. School of Electrical and Computer Engineering

mercia
Download Presentation

Radiation Effects in SiGe Devices

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler MURI Review: Vanderbilt University, Nashville, TN June 14, 2007 School of Electrical and Computer Engineering 777 Atlantic Drive, N.W., Georgia Institute of Technology Atlanta, GA 30332-0250 USA cressler@ece.gatech.edu Tel (404) 894-5161 / http://users.ece.gatech.edu/~cressler/

  2. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  3. SiGe Strained Layer Epi The Bright Idea! • Practice Bandgap Engineering … but do it in Silicon! ΔEV

  4. The SiGe HBT • • Conventional Shallow and Deep Trench Isolation + CMOS BEOL • • Unconditionally Stable, UHV/CVD SiGe Epitaxial Base • • 100% Si Manufacturing Compatibility • SiGe HBT + Si CMOS on wafer E B C 50 nm SiGe = III-V Speed + Si Manufacturing Win-Win! SiGe

  5. The SiGe Success Story • RapidGenerational Evolution (full SiGe BiCMOS) • Many DoD Opportunities! - SiGe HBT + Si CMOS (RF to mm-wave + analog + digital for SoC / SoP) > 500 GHz Potential 4th 3rd 2nd 1st Important Point:200-500 GHz @ 130 nm!

  6. SiGe mm-wave Comm • Wireless 60 GHz (ISM band) Data Links (>1.0 Gb/sec!) DARPA Funded Courtesy of IBM

  7. SiGe Radar Systems Single Chip X-band SiGe T/R (4x4 mm2) MDA Funded Begs For SiGe! Paradigm Shifting Impact for DoD Phased Array Radar!

  8. Extreme Environments • Cryogenic Temperatures (e.g., 77K = -196C) • High Temperatures (e.g., 200C) • Radiation (e.g., Earth orbit) Cars Drilling Moon / Mars CEV Aerospace

  9. NASA ETDP Project “SiGe Integrated Electronics for Extreme Environments” Objectives: Develop and Demonstrate Extreme Environment Electronic Components Required for Distributed Architecture Lunar / Martian Robotic / Vehicular Systems Using SiGe HBT BiCMOS Technology • Extreme Environment Requirements: (e.g., Lunar) • +120C (day) to -180C (night) + cycling(main focus) • radiation (TID + SEU tolerant) • Major Project Goals / Approach: - prove SiGe BiCMOS technology for +120C to -180C applications - develop mixed-signal electronics with proven extreme T + rad capability - develop best-practice extreme T range circuit design approaches - deliver compact modeling tools for circuit design (design suite) - deliverrequisite mixed-signal circuit components (component library) - deliverrobust packaging for these circuits (integrated multi-chip module) - demonstrate device + circuit + package reliability per NASA specs - develop a robust maturation path for NASA mission insertion (TRL-6) Goal:Be Ready for NASA Insertion

  10. 5” wide by 3” high by 6.75” long = 101 cubic inches 11 kg weight 17.2 Watts power dissipation -55oC to +125oC 1.5” high by 1.5” wide by 0.5” long = 1.1 cubic inches < 1 kg < 2-3 Watts -180oC to +125oC, rad tolerant Remote Electronics Unit The ETDP Remote Electronics Unit, circa 2009 The X-33 Remote Health Unit, circa 1998 REU in connector housing! Analog front end die Digital control die Conceptual integrated REU system-on-chip SiGe BiCMOS die Goals Specifications • Suite of REU Sensor Types: • Temperature, Strain, Pressure, Acceleration, Vibration, Heat Flux, Position, etc.

  11. Total-Dose Response • Multi-Mrad Total Dose Hardness (with no intentional hardening!) - ionization + displacement damage very minimal; no ELDRS either! • Radiation Hardness Due to Epitaxial Base Structure (not Ge) - thin emitter-base spacer + heavily doped extrinsic base + very thin base 63 MeV Protons 63 MeV Protons 4th 3rd 200 GHz SiGe HBT 2nd 1st 63 MeV protons @ 5x1013 p/cm2 = 6.7 Mrad TID!

  12. Single Event Effects • Observed SEU Sensitivity in SiGe HBT Shift Registers - low LET threshold + high saturated cross-section 50 GHz SiGe HBTs Goal… The ‘Achilles Heel’ of SiGe and Space! 1.6 Gb/sec P. Marshall et al., IEEE TNS, 47, p. 2669, 2000

  13. The Intuitive Picture • Collector-substrate (n+/p-) Junction Is a Problem (SOI solves this) • Lightly Doped Substrate Definitely Doesn’t Help! Heavy Ion (GeV cosmic ray) Very Efficient Charge Collection!

  14. SEU: TCAD to Circuits New RHBD SiGe Latch “TCAD Ion Strike” OUT DATA CLOCK UPSETS Leverage: NASA-NEPP, DTRA, NASA ETDP, DARPA Georgia Tech, Auburn, Vanderbilt Collaboration Standard Master Slave Latch SEU “Soft”

  15. SEU Tolerant Latches • Reduce Tx-Tx Feedback Coupling Internal to the Latch • Circuit Architecture Changes + Transistor Layout Changes Dual-Interleaved Limiting Cross-section (no errors!)

  16. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  17. 77K Proton SEU Testing A Fundamental Question: How Does Temperature Affect SEU? • Experiment (63 MeV protons at 300K + 77K) - 16-bit Shift Registers  Standard M/S latch vs. RHBD variant - data rates of 2-5 Gbit/s at normal incidence Leverage: NASA-NEPP, DTRA, NASA ETDP and Vanderbilt DURIP (test equipment) Paul Marshall’s able assistance was key!

  18. 77K SEU Cross-Section • Nearly 3x Increase in Upset Cross-section at 77K • - not totally unexpected: increased mobility + lifetime • RHBD SR Outperforms Standard M/S by > 10x at 77K (4Gb/s) • In Qualitative Agreement with Vanderbilt TCAD Simulations Need Better Setup For 77K Broadbeam Heavy Ion Measurements (in progress)

  19. Layout-Based RHBD • Transistor-Level Layout Variations for QCOLL Reduction? - alternate pn junction (n-ring) designed to shunt electron charge away Collaboration with Vanderbilt and Auburn Leverage of NASA-NEPP + DTRA + NASA-ETDP + Sandia

  20. Ion Microbeam Results • Alternative Low Impedance Path Shunts Collected Electrons • 20 – 25% Reduction in Peak and Integrated QCOLL at 3µm Spacing Integrated QCOLL inside DT (a) and outside DT (b) Peak QCOLL Other Candidate Techniques to Be Measured Next Week – Stay Tuned!

  21. New RHBD Latches • New Latch-Level Circuit Hardening Scheme Introduced • Low Area / Power / Speed Overhead vs. Previous RHBD Designs Capable of > 20 Gbps Operation with RHBD!

  22. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  23. Mixed-Mode Stress • Simultaneous High Current + High Voltage Stress (JE + VCB) - very complex damage response: 3 different mechanisms (at least) - damages both EB spacer and STI edge (just like radiation) - complex dependence on VCB, JE, area, temperature, etc. Q: Can Mixed-Mode Stress Shed Light on Radiation Damage?

  24. Mixed-Mode Annealing • Certain Stress Conditions Can Remove Radiation Damage - induced forward + inverse mode base leakage current is removed - high voltage + high current self-heating plays a role - effect observed in multiple SiGe technology platforms / nodes

  25. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  26. C-Si BJT Leverage • Complementary (npn + pnp) Si BJT Technology (C-Si): - very important in the core analog IC market (C-Si BiCMOS) - cost adder but still a huge win for this high-value-add market - enables a wide variety of best-of-breed precision analog blocks - enabling technology for many analog IC apps: e.g., drivers, video amps, bus interfaces, DAC/ADC, op amps, etc. - enables better current sources - enables push-pull driver topologies - enables low voltage / low-power analog designs - enables low noise circuits (especially 1/f) - C-Si BJTs do not have to push the fT envelope (higher BV) - CMOS is not a natural fit as an analog device (V scaling et al.)

  27. An Observation … Until Very Recently, SiGe HBT = npn SiGe HBT

  28. npn vs pnp SiGe HBTs • npn: no impact of band offset on minority carriers at low JC • pnp: strong impact of band offset on minority carriers at low JC npn SiGe HBT pnp SiGe HBT

  29. C-SiGe Technology #1 • Dual SiGe Epi Deposition (B doped for npn / AS doped for pnp) • Thick Film SOI for Isolation • Core Analog IC Design Platform for Texas Instruments pnp SiGe HBT npn SiGe HBT PS: Should be SEU Tolerant as Built! npn SiGe HBT

  30. TI’s BiCOM3X Platform • Irradiated with 63 MeV protons and 10 keV X-rays • Thick-film (1.25 mm) SOI Behavior Similar to Bulk Devices • Negligible dc and ac degradation (300K) We Will Be Starting Some Circuit Work in This Platform Shortly

  31. Substrate Bias Effects • Substrate Bias (20 V) During Irradiation Increases Inverse Gummel (STI) Degradation (circuit impact?) 63 MeV Proton 10 keV X-rays VS = 20V VS = 20V VS = 0V VS = 0V

  32. C-SiGe Technology #2 • IHP’s Complementary SiGe HBT Technology • - low RC and CCS collector construction (no STI between E and C) • - highly-tuned vertical doping profile • - reduced phosphorus diffusion in the C-doped base pnp SiGe HBT npn SiGe HBT [1] B. Heinemann, et al, IEDM, pp. 117-120, 2003

  33. IHP C-SiGe Technology • Record Performance for a C-SiGe HBT Process • - 170 GHz npn SiGe HBT + 90 GHz pnp SiGe HBT!

  34. TID Effects in C-SiGe • pnp SiGe HBTs Appear More Radiation Tolerant Than npn’s • Q: Are the Damage Mechanisms Fundamentally Different?

  35. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  36. SiGe n-MODFETs Collaboration with S. Koester at IBM

  37. SiGe n-MODFETs • Impact of Radiation-Induced Damage on RF Characteristics • 10 keV X-ray irradiation degrades fmax but not fT • degradation dependent on LSD rather than LG (S/D Resistance) We Now Have SiGe p-MODFETs in Hand – Stay Tuned!

  38. Progress / Plans • SiGe Offers Great Potential for Many DoD Applications - SiGe HBT + Si CMOS (RF to mm-wave + analog + digital for SoC / SoP) • Many Issues in SiGe Still Need Attention • - improved understanding of basic damage mechanisms (TID + SEE) • - understand the effects of temperature on damage mechanisms / SEE • - need to assess SET in analog/mixed-signal SiGe circuits • - explore other SiGe HBT variants (SiGe HBT on SOI, C-SiGe, etc.) • - explore other (new) SiGe-based devices (SiGe MODFETs, photonics, etc.) • - develop new RHBD approaches (device + circuit) for SEE mitigation • - need improved 3D TCAD for understanding SEE (and TID) • Lots of Leverage for SiGe Hardware / Testing Activity • - many SiGe tapeouts (IBM, IHP, TI, Jazz, ST): devices + circuits • - DTRA / NASA-NEPP (Paul Marshall) • - NASA SiGe ETDP Project (RHESE) • - CFDRC SBIR (DTRA) for Improved TCAD for SEU / Cryo-T, etc. • - excellent collaboration between Georgia Tech and Vanderbilt teams

  39. Publications [1] A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-8, 2007. [2] M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-7, 2007. [3] R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Nuclear and Space Radiation Effects Conference, paper F-5, 2007. [4] L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-6, 2007. [5] J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Nuclear and Space Radiation Effects Conference, paper H-3, 2007. [6] A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Nuclear and Space Radiation Effects Conference, paper C-6, 2007. [7] P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Nuclear and Space Radiation Effects Conference, paper PA-4, 2007. [8] T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Nuclear and Space Radiation Effects Conference, paper PC-6, 2007. [9] M. Varadharajaperumal, G. Niu, X. Wei, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Nuclear and Space Radiation Effects Conference, paper H-4, 2007.

More Related