Radiation Effects on Emerging Electronic Materials and Devices

1. Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics

2. Team Members • Vanderbilt University • Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller • Physics: Len Feldman, Sok Pantelides • Arizona State University • Electrical Engineering: Hugh Barnaby • University of Florida • Electrical and Computer Engineering: Mark Law, Scott Thompson • Georgia Tech • Electrical and Computer Engineering: John Cressler • North Carolina State University • Physics: Gerry Lucovsky • Rutgers University • Chemistry: Eric Garfunkel, Evgeni Gusev

3. Institute for Space and Defense Electronics Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: • Government and industry radiation-effects resource • Modeling and simulation • Design support: rad models, hardening by design • Technology support: assessment, characterization • Flexible staffing driven by project needs • Faculty • Graduate students • Professional, non-tenured engineering staff

4. Radiation Effects on Emerging Electronic Materials and Devices • More changes in IC technology and materials in past five years than previous forty years • SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices… • Future space and defense systems require understanding radiation effects in advanced technologies • Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation…

5. Approach • Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners • First-principles quantum mechanical analysis of radiation-induced defects  physically based engineering models • Development and application of a fundamentally new multi-scale simulation approach • Validation of simulation through experiments

6. Virtual Irradiation • Fundamentally new approach for simulating radiation effects • Applicable to all tasks

7. Physically Based Simulation of Radiation Events • High energy protons incident on advanced CMOS integrated circuit • Interaction with metallization layers dramatically increases energy deposition Device Description Radiation Events

8. Hierarchical Multi-Scale Analysis of Radiation Effects Materials Device Structure IC Design Energy Deposition Defect Models Circuit Response Device Simulation

9. Current Joint Program of ISDE/VU and CFDRC “Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials” STTR Phase I Project, sponsored by NASA Ames(2005): Program Objectives: • Couple Vanderbilt Geant4and CFDRC NanoTCAD 3D Device Solver • Adaptive/dynamic 3D meshing for multiple ion tracks • Statistically meaningful runs on a massivelyparallel computing cluster • Integrated and automated interface of Geant4 and CFDRC NanoTCAD 3D device simulation Geant4 - accurate model of radiation event - Adaptive 3D meshing - Physics based transient response - 3D Nanoscale transport e- p Blue = + ions n

10. Research Plan • Tasks defined and scheduled

11. Organization by Task • Radiation response of new materials • NCSU, Rutgers, Vanderbilt • Impact of new device technologies on radiation response • ASU, Florida, Georgia Tech, Vanderbilt • Single-event effects in new technologies and ultra-small devices • Florida, Georgia Tech, Vanderbilt • Displacement-damage and total-dose effects in ultra-small devices • ASU, Vanderbilt

12. Radiation Response of New Materials • HfO2-based dielectrics and emerging high-k materials • Metal gates • Interface engineering (thickness & composition) • Hydrogen and nitrogen at SiON interfaces (NBTI) • Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) • Defects in nanoscale devices • Energy deposition via Radsafe/MRED

13. Impact of new device technologies on radiation response • SiGe HBTs • Strained Si CMOS • Ultra-small bulk CMOS • Mobility in ultra-thin film SOI MOSFETs • TID response in scaled SOI CMOS • Multiple gate/FinFET devices • Multi-scale hierarchical analysis of single-event effects

14. Single-event effects in new technologies and ultra-small devices • Development/application of integrated simulation tool suite • Applications in all tasks • Effects of passivation/metallization on SEE • Tensor-dependent transport for SEE • Extreme event analysis • Spatial and energy distribution of e-h pairs • Energy deposition in small device volumes

15. Displacement-damage and total-dose effects in ultra-small devices • Physical models of displacement single events • Microdose/displacement SEE in SiGe and CMOS devices • Single-transistor defect characterization • Link energy deposition to defects through DFT molecular dynamics • Multiple-device displacement events • Dielectric leakage/rupture

16. Collaborators • SRC/Sematech • CMOS, metal gate, high-k, FinFETs • Sandia Labs • Alternative dielectrics, thermally stimulated current • NASA/DTRA • Radiation-effects testing • Oak Ridge National Laboratory • Atomic-scale imaging • CFDRC • Software development • IBM • SiGe, CMOS, metal gate, high-k • Intel • Strained Si and Ge channels, tri-gate, high-k, metal gate • Texas Instruments • CMOS • Freescale • BiCMOS and SOI • Jazz • SiGe • National • SiGe