1 / 18

Development of Silicon Microstrip Sensors in 150 mm p-type Wafers

Development of Silicon Microstrip Sensors in 150 mm p-type Wafers. Y. Unno , S.Terada, Y.Ikegami, T. Kohriki, K.Hara, and the ATLAS R&D collaboration of " Development of non-inverting Silicon strip detectors for the ATLAS ID upgrade" K. Yamamura, S. Kamada (Hamamatsu Photonics).

metea
Download Presentation

Development of Silicon Microstrip Sensors in 150 mm p-type Wafers

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Development of Silicon Microstrip Sensors in 150 mm p-type Wafers Y. Unno, S.Terada, Y.Ikegami, T. Kohriki, K.Hara, and the ATLAS R&D collaboration of "Development of non-inverting Silicon strip detectors for the ATLAS ID upgrade" K. Yamamura, S. Kamada (Hamamatsu Photonics) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  2. Some History of Development • 1995 p-type 4-inch (100 mm) wafer (p95) • FZ(111) (~6 kΩcm) wafers • 2005 p-type 4-inch (100 mm) wafer (ATLAS05) • FZ(111) (~6k Ωcm) • MCZ(100) (~900 Ωcm) wafers • 2006 p-type 6-inch (150 mm) wafer (ATLAS06) • FZ-1(100)(~6.7k Ωcm), FZ-2(100)(~6.2k Ωcm) • MCZ(100)(~2.3k Ωcm) • 2007 p-type 6-inch (150 mm) wafer (ATLAS07) • FZ-1(100)(~6.7k Ωcm), FZ-2(100)(~6.2k Ωcm) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  3. p95 p-type Sensors • A prototype n-in-p sensor was fabricated in 1995 • 6 cm x 3 cm x 300 um, 50 um pitch, common p-stop • no DC-field plate over p-stop • p-bulk, (111), ~6 kΩcm • Irradiated up to 1.1 x 1014 p/cm2 at 12 GeV PS at KEK • A report was made in NIM A383(96)159 • Re-measurements after 10yrs (irrad. stored at 0 C) • I-V • C-V • CCE with laser Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  4. ATLAS05 p-type Sensors • Investigation of isolation of n-strips • p-stop with/without p-spray • With/without field-plate • p-stop doping levels Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  5. ATLAS05 p-type Sensors • p-type wafers • 4-inch wafer for cost reason • MCZ: • ~900 Ωcm • Orientation (100) • FZ: • ~6k Ωcm • Orientation (111) • Sensors • Miniature: 1cm x 1cm • Large: ((~1cm x ~6cm) x6 zones) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  6. ATLAS06 p-type Sensors • 6 inch (150 mm) wafer • FZ-1 (100), FZ-2 (100), MCZ • Further R&D of isolation structures • No DC-field plate • Width of (common) p-stop • p-stop/p-spray doping variations Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  7. ATLAS06 p-type Sensors • Many miniature (1cm x 1cm) sensors • One sensor per one "Zone" • Large (3cm x 6 cm) sensors with 2 striplets • Variation of Polysilicon bias resistor connections Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  8. ATLAS07 p-type Sensors • 6-inch (150 mm) wafer • Maximum size sensor (~10 cm x ~10 cm) prototyping • R&D's • Candidate isolation structures • "Punch-thru Protection" structures • Wide/Narrow metal effect • Wide/Narrow pitch effect Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  9. ATLAS07 p-type Sensors • Full size (9.75 cm x 9.75 cm) prototype sensors • 4 segments: two "axial" and two "stereo" (inclined) strips Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  10. Proton Irradiation at CYRIC • Facility associated with Univ. Tohoku, Sendai, Japan KEK 70 MeV protons Beamline 32 Beamline 31-2 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  11. Proton irradiations at CYRIC • AVF Cyclotron at Tohoku University • Beam energy: 70 MeV • Beam intensity: 10nA ~ 800nA • Beam spot size: ~5 mm FWHM • ~4 min. for 1x1015 at 800 nA • Irradiation history • Beamline 31-2 • 2005.10.17 - 1st and beamline study • ATLAS05 - up to 5x1015 • 2006.01.27 +2006.03.14 +2006.06.26 + 2006.10.16 • ATLAS06 - up to 2x1015 • 2007.05.18, • Beamline 32 • 2007.08.28 • ATLAS07 - up to 1x1015 • 2008.03.11 • Change of beamline • Machine time/user conflict in 31 • Straight, simpler line in 32 Beamline 31-2 Beamline 32 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  12. Laser for FDV and CCE • Full Depletion Voltages (FDV) • C-V method • Laser method • Charge Collection Efficiencies (CCE) • Laser method Reference sensor Pulsed laser (1064nm) focused to 4um x 4um Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  13. Full Depletion Voltages ATLAS05 ATLAS06 CCE CV CCE CCE CV • Very different fluence development in 4 inch and 6 inch!! • All p-type • 4 inch FZ (111), though • FZ and MCZ are similar in 6 inch!! • except below ~2x1014 , no advantage in MCZ FDV~500V!! at 1x1015 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  14. CCE not fully depleted VB=1kV ATLAS06 • Charge loss up to 1x1015 is small • 2x1015 appreciably less • No obvious difference is FZ and MCZ ATLAS05 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  15. Microdischarge ATLAS06 • Onset voltage (VMD) • >600 V in FZ • some trouble in MCZ • Zone5 exceptional • After irradiation (>1x1014) • >1000 V!! • Even Zone5 and MCZ Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  16. N-strip Isolations + p-spray • Showing Vbias voltages to achieve isolation • Isolation gets worse as fluence accumulates • Number of observations can be seen from the plots.... Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  17. TCAD Simulations • N-P gap was too narrow • Potential of 2nd p-stops makes effective p-stop width as wide up to 2nd p-stop Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

  18. Summary • n-in-p p-type microstrip sensors have been fabricated in p-FZ and p-MCZ wafers, for several years by now • Proton irradiations, 70 MeV, are being routinely carried out at CYRIC of Tohoku Univ., • Fluence development of full depletion voltage (FDV) of 4-inch (100 mm) and 6-inch (150 mm) is very different • In 6-inch, FDV is ~500 V at 1x1015 neq/cm2 • CCE is near full up to 1x1015 neq/cm2 • Onset voltage of the microdischarge has been achieved to be >600 V in general • Number of isolation structures are being investigated and we are narrowing the candidates • A full size microstrip sensor has been prototyped and we have the first look in hand Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

More Related