130 likes | 261 Views
Design and development of thin double side silicon microstrip sensors for CBM experiment. Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University. 1-st CBM - Russia - JINR Collaboration Meeting May 19-22 , 2009 , Dubna , Russia.
E N D
Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor Geometry • According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2 • Strip pitch for both sides - 58 μm • Stereoangle - ±7.5о • Number of stripson both sides - 1024 • Number of readout chips for both sides - 8 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor N-side Contact Pads 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side poly-Si resistors 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side p-stops configuration 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1st and 2nd metal 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1st and 2nd metal details 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
P-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Results • Number of masks: • N-side – 8 • P-side – 9 • Estimated production time - 3 months + 1 month for masks production. 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Expected • Full Depletion Voltage (FDV) - <50 V • Working voltage –70 - 250V • Dark current at 100 V – < 15 nА/см2 • AC capacitance - >10 pF/см • Capacitors breakdown voltage - >170 V • Bias resistor value - 1.0 ± 0.4 MOhm • Number of bad strips - <0.5%/side 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Last • This work have been done within CBM-MPD STS Consortiumand supported by ISTC, see Yu. Murin presentation 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia