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Bolometer Fabrication

Bolometer Fabrication. Ashing of PI2737 in Oxygen Plasma . Au Contact. Au Absorber. SiGe. PI 2737 Sacrificial Layer. Al Mirror. Ti Arm. SiN Insulation Layer. P- Si Substrate. Completed Bolometer : SEM Picture.

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Bolometer Fabrication

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  1. Bolometer Fabrication Ashing of PI2737 in Oxygen Plasma Au Contact Au Absorber SiGe PI 2737 Sacrificial Layer Al Mirror Ti Arm SiN Insulation Layer P- Si Substrate

  2. Completed Bolometer : SEM Picture

  3. Bolometer: Resistivity & Temperature Coefficient of Resistance (TCR) Variation With Temperature

  4. Bolometer: Current voltage (I-V) Characteristics

  5. Bolometer: Noise Analysis at Different Bias Currents

  6. Bolometer: Noise Analysis of two bolometers and the corresponding Normalized Hoogie Coefficient for 1/f-noise (αH/N) determined at 10 Hz frequency Where is noise voltage power spectral desity in V2/Hz Ib is the bias current R is the resistance of the device N is the number of fluctuators

  7. This material is based in part by work supported by the National Science Foundation ECS-0322900

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