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STT-RAM Generator. - Anurag Nigam. Challenges in SRAM High Leakage Solution Non-volatile memory. Leakage current. Motivation. Memory Technology Comparison. Hard Ferro magnetic layer. BL. Oxide layer. MTJ. R P. Free Ferro magnetic layer. R AP. WL. SL.
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STT-RAM Generator - Anurag Nigam
Challenges in SRAM High Leakage Solution Non-volatile memory Leakage current Motivation
Hard Ferro magnetic layer BL Oxide layer MTJ RP Free Ferro magnetic layer RAP WL SL STT-RAM bit cell overview MTJ • 1 MTJ • 1 access transistor
Bit-cell Design • IMTJ = f (Vin, parameters) • Behavioral current source • Need to solve differential equation • How to solve differential equation ??
V I C Capacitor current equation • I = C dV/dt
componentName = isource I = f(V) Bit-cell design • Editing CDF parameter to create behavioral source
WL BL=0V SL=1V Switching Write “1” Operation Bit-cell design Schematic
STT-RAM Macro Data In Write Driver R/W Data In CLK WLen R/W Timing Block Data Out CLK ADDR Memory Array R’/W ADDR CL WLS Sensing Block SAen Data Out Memory Interface
TBUF BL TBUF SL Write Driver • Write “1” BL =0 SL=1 • Write “0” BL=1 SL=0
Test bit-cell Sense amplifier design
RAP RP R-V characteristic of MTJ • Two states (RAP and RP) • Resistance is a function of voltage
Schematic automation • Leaf-cell schematic creation • Bitcells – Manual (using current/voltage sources) • Decoders – Skill • Sense amp. Timing block, Write driver – Manual • Memory array creation • 1Kb array - Skill
Schematic automation • Decoder procedure(Create7to128DecoderSchematic(libname,cellname)) • Write Driver procedure(CreateWriteDrSchematic(libname,cellname,C)) • Memory Array procedure(CreateSTTRAMSchematic(libname,cellname,R,C))
128 x 8 array Write Driver Timing block Sense amplifier 1Kb STT-RAM array
Read “1” Write “0” Read ”0” Write “1” clk Out<0> Data<0> Read and Write operation
Deliverables • STT-RAM bit-cell SPICE model • Skill script to generate complete functional STT-RAM • Class-specific work • Importing bit-cell model in ADE • Skill script development