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Physics and Applications of Plasma-Based Ion Implantation

Physics and Applications of Plasma-Based Ion Implantation. Jason Olejarz May 4, 2009. Basics of Conventional Ion Implantation. Process for altering material surface properties Beam-line technique Applications. [1]. Physics of Plasma-Based Ion Implantation. Material is immersed in a plasma

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Physics and Applications of Plasma-Based Ion Implantation

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  1. Physics and Applications of Plasma-Based Ion Implantation Jason Olejarz May 4, 2009

  2. Basics of Conventional Ion Implantation • Process for altering material surface properties • Beam-line technique • Applications [1]

  3. Physics of Plasma-Based Ion Implantation • Material is immersed in a plasma • Material is biased with a high negative voltage • Ions accelerate toward the material and are implanted [1]

  4. Parameters • Incident ion energy (~ 1-100 keV) • Duration of pulse (~ 10 us) • Frequency of pulses (~ 10 Hz-1 kHz) • Ion implantation depth (~ 10 nm-1 um)

  5. Sheath Dynamics • 3 timescales • Electrons accelerate away from the substrate • ~ 100 ps • Ions accelerate toward the substrate • ~ 100 ns • Steady state is reached • Tens of inverse ion plasma frequencies

  6. Sheath Dynamics [2]

  7. Sheath Thickness • Child-Langmuir law

  8. Sheath Thickness [1]

  9. Plasma Properties • Influence of density on sheath formation • Influence of pressure on ion energy distribution

  10. Ion-Surface Interaction • Complicated process • Physical and chemical effects • Described to a good approximation by studying a single incident ion • Electronic stopping • Nuclear stopping

  11. Ion-Surface Interaction [1]

  12. Collisional Defects and Surface Erosion • Frenkel defects • Sputtering

  13. Applications in Metallurgy and Tribology • Uses • Strengthening metals • Reducing friction and wear • Advantages • Uniform implantation of irregular shapes • Quick implantation over large areas • Disadvantages • Lack of controllability of incident ion parameters

  14. Applications in Semiconductor Technology • Uses • Plasma doping • Doping of devices of decreasing size • Advantages • Low incident ion energy • Disadvantages • Lack of controllability of incident ion parameters

  15. Current Research • Manufacturing of biomaterials • Modification of polymer surfaces • Cost • Radiation • Secondary electron emission

  16. References • Plasma-Based Ion Implantation; Wolfhard Moller and Subroto Mukherjee; Current Science, Vol. 83, No. 3, 10 August 2002 • Plasma-Based Ion Implantation and Deposition: A Review of Physics, Technology, and Applications; Jacques Pelletier and Andre Anders; IEEE Transactions on Plasma Science, Vol. 33, No. 6, December 2005 • Plasma-Based Ion Implantation and Electron-Bombardment for Large-Scale Surface Modification of Materials; J. N. Matossian, R. Wei, J. D. Williams; Surface and Coatings Technology 96 (1997) 58-67 • Ultra-Shallow Junctions Produced by Plasma Doping and Flash Lamp Annealing; Wolfgang Skorupa, Rossen A. Yankov, Wolfgang Anwand, Matthias Voelskow, Thoralf Gebel, Daniel F. Downey, Edwin A. Arevalo; Materials Science and Engineering B 114-115 (2004) 358-361

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