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Optimization of Plasma Barrel Etching for Microprocessors. By Acacia Caraballo and Paul Filichkin. Basic Processes of Microprocessor Production. One step in the microprocessor production process is the etching away of layers of silicon dioxide from the surface of a silicon wafer.
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Optimization of Plasma Barrel Etching for Microprocessors By Acacia Caraballo and Paul Filichkin
Basic Processes of Microprocessor Production One step in the microprocessor production process is the etching away of layers of silicon dioxide from the surface of a silicon wafer. The surface of the wafer is first coated with photo resist and then exposed to ultra-violet light with a mask covering certain areas. The ultra-violet rays take off the photo resist and the photo resist that is left works as a protective barrier against plasma etching. The wafer is then placed inside of a plasma barrel etcher, which carves away the silicon dioxide. Etching silicon dioxide requires CF4 gas, but due to safety reasons these experiments were conducted with O2 and polyethylene coupons instead of silicone wafers.
Background • What is a plasma barrel etcher? • A plasma barrel etcher is a device used in the making of microprocessors. It is used for taking away very small and precise layers in a specific area of the microprocessor. • What is plasma? • Plasma is a chemically reactive gas. It is made up of ions, electrons, free radicals, excited gas molecules, and gas molecules. • Why does plasma glow? • Plasma glows because electrons are moving from a higher energy level to a lower energy level, releasing an energy wave in the form of light.
Objectives • The purpose of this lab was to become familiar with plasma and to observe the effects of pressure and power on the removal of a polymer substrate in a plasma reactor. • To optimize the process of plasma etching to minimize cost and waste generation.
Equation • PV = nRT • Concentration CO2 = n/V = P/RT • P (Pressure), V (Volume), R (Gas Constant), T (Temperature), n (Number of Moles of O2)
Analysis • Our tests found that the optimum removal rate is around 0.5 Torr (0.025 mol O2/m3) at 400 Watts. • The reason the reaction rate is smaller at 0.2 Torr (0.01 mol O2 /m3) is because there is less O2 in the Plasma Etcher therefore there are less free radicals to react with the polyethylene. • The reason the reaction rate is smaller at 0.8 Torr (.04 mol O2 /m3) is because there are too many molecules which collide and reduce the mean free path (the average molecular travel distance before a collision) thus reducing the number of free radicals that react with the polyethylene. • This experiment also uncovered that doubling the power from 200 -400 Watts did not double the removal of polyethylene.
Future Work • After finding the results of the three pressure settings we can see the general trend but for future work it is important to find the values of the points in between. That way we can find a true peak and be able fully optimize this process. • Also on two of our test the polyethylene melted and gave us faulty data. It is important to investigate the effects of temperature on the reaction in the plasma barrel etcher.
Gas Rotometer: This controls the gas flow rate, thus allowing us to control the reactor pressure.
Pneumatic Gas Control Box: This is the box that controls the valves into the etcher.
Power Source: This controls the energy that flows into the reactor.
Reactor Vessel: This is where the reaction takes place. It goes down to extremely low pressures and has electrodes that enable the creation of the plasma.
