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PIDS Wireless RF and Analog/Mixed-Signal IC Technology Roadmap

PIDS Wireless RF and Analog/Mixed-Signal IC Technology Roadmap RF and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public Conference Dec. 2, 2003 Hsinchu, Taiwan. Objectives. Use wireless IC as new system / technology driver for ITRS

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PIDS Wireless RF and Analog/Mixed-Signal IC Technology Roadmap

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  1. PIDS Wireless RF and Analog/Mixed-Signal IC Technology Roadmap RF and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public ConferenceDec. 2, 2003 Hsinchu, Taiwan nr

  2. Objectives • Use wireless IC as new system / technology driver for ITRS • First time to have a dedicated section (in PDIS chapter) on AMS and RF technologies in ITRS • First time to include III-V compound semiconductors in ITRS • Address intersection of Si-based technologies with III-V compound semiconductors and other potential technologies (MEMS, BAW, Passives, ..) • Present technical challenges and requirements for AMS & RF IC technologies in wireless applications for cellular phones, WLAN/WPAN, automotive radar, and phased array RF systems, frequencies 0.8-100GHz nr

  3. Scope of Work Circuit functions of a typical mobile communication system 0.8-100GHz AA LNA AGC ADC filter VCO AMS RF Transceiver reference I,V,f clock tree ¸ N Digital Signal Processor f ref analog signal processor PA DAC PA&PM power control logic regulators nr

  4. Analog/Mixed-Signal & RF Roadmap Evolution PIDS 2003 PIDS 2001 Memory & Logic Analog/Mixed-Signal Reliability Emerging Research Devices • RF & AMS IC Technologies for • Wireless Communications: • 0.8-10GHz • Analog & Mixed Signal • RF Transceivers • PAs & Power Management • 10-100GHz • mm-Wave nr

  5. Accomplishments • Formed a dedicated Working Group with representives from both industry and academia • Developed work scope, WG organization, and schedule • Completed development of technology requirement / tables • Completed development of potential solutions / tables • Completed the RF/AMS section in PIDS chapter • Developing multi-year strategy nr

  6. Organization 24 members (20 US, 4 Europe) Chair: Margaret Huang, Motorola Co-Chairs: Bin Zhao, Skyworks Jan-Erik Mueller, Infineon Editorial: Herbert Bennett, NIST Sub-Group (1): PAs & Power Management Julio Costa, RFMD (L) Chuck Weitzel, Motorola (L) Ding Day, Skyworks Ali Hajimiri, Caltech Dave Halchin, RFMD Rik Jos, Philips Jan-Erik Mueller, Infineon nr

  7. Organization Sub-Group (2): RF Transceivers Marco Racanelli, Jazz (L) Peter Cottrell, IBM Ali Niknejad, UC Berkeley Sam Shichijo, TI Sub-Group (3): Analog & Mixed Signal Ralf Brederlow, Infineon (L) Margaret Huang, Motorola Sam Shichijo, TI Bin Zhao, Skyworks Sub-Group (4): Millimeter Wave (10-100GHz) Tony Immorlica, BAE Systems (L) Roger Van Art, Jazz Ronald Grundbacher, Northrop Grumman Tom Kazior, Raytheon Minh Le, Vitesse Michael Schlechtweg, Fraunhofer Institute Jeff Shealy, RFMD John Zolper, DARPA nr

  8. GaAs InP SiGe Si 0.8 GHz 2 GHz 5 GHz 10 GHz 28 GHz 77 GHz 94 GHz GSM CDMA ISM PDC GPS SAT Radio DCS PCS DECT CDMA WLAN 802.11b/g HomeRF Bluetooth SAT TV WLAN 802.11a SAT TV WLAN Hyperlink UWB LMDS WLAN AUTO RADAR Contraband Detection All Weather Landing Application Spectrum nr

  9. Working Strategy • Methodology: • (1) Communication protocols/standards – governing requirements • (2) Circuits: performance figure of merit – trends/requirements • (3) Devices: performance trend – solutions/challenges • Divided into 2 frequecy bands • (1) 0.8 - 10 GHz (AMS, RF Transc, PA&PM) • (2) 10 - 100 GHz (mm-Wave) • Generates roadmap tables in each of the 4 areas: • requirements, difficult challenges, potential solutions • Tables cover technologies • Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN • and device structures • MOSFET, MESFET, HEMT, HBT, LDMOS, on-chip passives • Outcome: RF & AMS IC technology roadmap nr

  10. Based on a split from the AMS Table in ITRS-2001 • Relatively low frequency devices – AMS applications • Analog MOS device scaling with relatively high V • nMOS (speed); nMOS (precision) • On-chip capacitors & resistors • Bipolar for analog functions • Precision and matching performance • 1/f noise, cap nonlinearity, leakage Sub-Group: Analog/Mixed-Signal nr

  11. Sub-Group: RF Transceivers • Based on a split from the AMS Table in ITRS-2001 • Focus on 0.8-10GHz frequency range • Device applications: LNA, freq synthesis/logic; VCO; drivers/amp; filters/RF bypass; integration • Bipolar (NPN); RF-MOS (NMOS); inductors, varactors; cap & res for RF; isolation • Max ft, fmax, noise figure, trade-off between power / noise / linearity / etc. nr

  12. Sub-Group: PAs & Power Management • New for ITRS-2003 • Focus on 0.8 – 10 GHz • PAs for terminals: relatively high voltage and high breakdown device (typically >10V) – III-V HBT, PHEMT, Si MOSFET, SiGe HBT • Basestation PAs: high operating voltage (>10V–50V) devices – Si LDMOS, GaAs FET, SiC FET, GaN FET) • Key driving force: integration & cost nr

  13. Base Station Devices Technology Sub-Group: PAs & Power Management nr

  14. Sub-Group: mm-Wave • New for ITRS-2003 • Focus on 10 – 100 GHz Applications • Dominated by compound semiconductors: GaAs, InP, GaN + SiGe • Devices: MESFET, PHEMT, HEMT, MHEMT, HBT • Performance: low noise, power, linearity, ultra-high speed digital • Table: a variety of combinations of materials, device types, and for different performance / applications nr

  15. Key Considerations • Drivers for Wireless Communications • Cost (die size, part count) • Power consumption • Functionality • Device operating frequencies, channel bandwidth, transmit power, etc. – determined by wireless communication standards and protocols • Non-traditional ITRS roadmap parameters • Regulations from governments determine system spectrum • Standards and protocols drive frequencies and performance • Cost / Performance drives integration • Signal Isolation (technology, circuit/system, EDA) • Analog shrink (power supply, area, novel device structures) • Filters and T/R switches integration (MEMS) • Multi-band Multi-mode applications SOC vs. SIP / RF modules nr

  16. Difficult Challenges • Signal isolation • Optimizing analog/RF CMOS devices with scaled technologies: mismatch, 1/f noise, and leakage with high-k gate dielectrics • High density integrated passive element scaling and use of new materials: Q-factor value for inductors; matching and linearity for capacitors • Reduced power supply voltages: degradation in SNR and signal distortion performance • Reduced device breakdown voltage in scaled technologies • High frequency devices with increased operating voltage for base station applications • Compound semiconductor substrates with good thermal dissipation and process equipment for fabrication at low cost • Difficulty and cost of integrating various analog/RF and digital functions on a chip or in a module nr

  17. Key Cross-TWG Issues • Assembly & Packaging • RF module/SIP drives need for Chip & Package co-design • Emerging Research Devices • Analog functions and performance with novel device structures • Front End Processes / Interconnect • Low inductance ground connection • Suppressing electrical interference / cross talk / signal isolation • High Q inductors • Substrate (low/high resistivity) • Modeling and Simulation • Modeling for SOC (device/circuit/system) • Accurate, fast and predictive Analog/RF compact models • Computationally efficient physical models for carrier transport • Design/Test • Design for reduced RF device/circuits characterization & test • Co-design flow of RF, analog and digital circuits • RF/analog/digital test for SoC system nr

  18. Summary • 2003 ITRS significantly expanded in RF & AMS IC Technologies for Wireless Communications • new system / technology driver for ITRS • includes compound semiconductor devices • AMS/RF requirements, difficult challenges, potential solutions • Cost is a major driver moving more wireless applications to SiGe and (eventually) to CMOS • Multi-year strategy to engage Design, Modeling, FEP, Interconnect, Test, Assembly & Packaging, ERD, ESH, etc. • Enhance WG memberships – increase geographical participation and representation (especially in Asia/Europe) nr

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