1 / 16

A Low-Power Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6 GHz

A Low-Power Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6 GHz. Silicon Monolithic Integrated Circuits in RF Systems, 2007 IEEE2007 Topical Meeting on Jan. 所別 : 積體電路設計研究所 學號 : 95662004 學生：賴秀全. Outline. Abstract Introduction Circuit Design

omar
Download Presentation

A Low-Power Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6 GHz

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. A Low-Power Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6 GHz Silicon Monolithic Integrated Circuits in RF Systems, 2007 IEEE2007 Topical Meeting on Jan. 所別 : 積體電路設計研究所 學號 : 95662004 學生：賴秀全

  2. Outline • Abstract • Introduction • Circuit Design • Simulation Results • Conclusion • References

  3. Abstract • We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. • Fabricated in a 0.18 gm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8dB over the band, while consuming only 9.4 mW.

  4. Introduction • Ultra-wideband (UWB) technology, with wide frequency bands from 3.1-10.6 GHz, has become important because it offers high data rates, low power transmission. • This UWB LNA is designed in a fully chip implemented in the 0.18 um CMOS technology.

  5. Fig 1. Current – reused LNA

  6. Fig. 2. Schematic of the ADS-designed UWB LNA circuit which uses TSMC 's 0.18 um RF CMOS technology.

  7. Fig. 3. Image of the fabricated UWB LNA.

  8. - 8.6dB Fig. 4. Measured and simulated input reflection coefficient of the low power UWB LNA.

  9. < - 8dB Fig. 5. Measured and simulated output return loss of the low power UWB LNA.

  10. 11.9dB 11.9 dB Fig. 6. Measured and simulated forward gain of the low power current-reuse UWB LNA.

  11. <45dB 11.9 dB Fig. 7. Measured and simulated reverse isolation of the low power current-reuse UWB LNA.

  12. Fig. 8. Measured and simulated noise figure of the LNA.

  13. Table 1. Comparison of UWB CMOS LNA performance: published and this work (*Only core LNA)

  14. Conclusion • A CMOS UWB LNA with a current-reuse cascade common-source configuration has been designed. This UWB LNA exhibited a high 9.5 dB gain, low 5 dB NF ,input/output return loss less than -8 dB, and only 9.4 mW power consumption.

  15. References • Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, S. C. Pai, C. C. Chi, and C. P. Liao, "RF loss and cross talk on extremely high resistivity (IOK-IMQ-cm) Si fabricated by ion implantation," in IEEE MTT-S Int. Microwave Symp.Dig., 2000, vol. 1, pp. 221-224. • K. T. Chan, A. Chin, Y. B. Chen, Y.-D. Lin, D. T. S.Duh, and W. J. Lin, "Integrated antennas on Si, protonimplanted Si and Si-on-Quartz," in IEDM Tech. Dig., 2001, pp. 903-906. • A. Ismail and A. Abidi, “A 3 to 10 GHz LNA using a wideband LC-ladder matching network,” in IEEE ISSCC Dig. Tech. Papers, 2004, pp. 384–385. • A. Bevilacqua, and Ali M. Niknejad, "An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Reveivers," in IEEE Journal of Solid-State Circuits, Vol. 39, No. 12, 2005, pp. 2259-2268.

  16. Q&A Thank you

More Related