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Recent Progress in Non-Cesiated III-Nitride Photocathodes

This workshop presentation discusses the progress made in non-cesiated III-Nitride photocathodes, including the use of delta-doping and the advantages of III-Nitrides for photocathode applications. The activation techniques and optimization parameters are presented, leading towards stable and efficient photocathodes without the need for cesiation.

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Recent Progress in Non-Cesiated III-Nitride Photocathodes

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  1. Recent Progress in Non-Cesiated III-Nitride Photocathodes Douglas Bell, Shouleh Nikzad Jet Propulsion Laboratory Amir Dabiran SVT Associates, Inc. Shadi Shahedipour, Neeraj Tripathi SUNY-Albany 1st Workshop on Photocathodes: 300nm-500nm 20 July 2009

  2. Introduction 3x Directorate: Engineering and Science Division 38: Instruments and Science Data Systems Section 389: Instrument Electronics and Sensors Group 389E: Advanced Detector & Nanoscience Technologies Shouleh Nikzad (Supervisor) Doug Bell Jordana Blacksberg Frank Greer Blake Jacquot Todd Jones The group works on advanced device concepts (mostly detector), including new materials. 20 July 2009

  3. Topics • Motivation for III-N Photocathodes • Delta-doping • Progress in delta-doping for non-cesiated photocathodes • AlGaN versus GaN • Summary 20 July 2009

  4. Why III-Nitrides for Photocathodes? • Low electron affinities in the AlxGa1-xN system. • High chemical stability. • Low inherent surface state charge. • Tailorable UV response and solar blindness. • Current UV photocathodes suffer from low QE and instability in the response Electron Affinities in AlxGa1-xN χ Ec Vacuum p-III-N Ev Grabowski et al, Appl. Phys. Lett. 78, No. 17 (2001) 20 July 2009

  5. Photocathode Activation with Cesiation Decay in Quantum Efficiency from O2 Exposure Cesiated Photocathode χ 3.1 eV EG 3.4 eV p-GaN Cs layer Machuca et al, JVST B (1) Machuca, et al. (2) Wu and Kahn (3) Shahedipour, et al. , (4)Siegumund • Quantum efficiency degrades rapidly under minute exposure to O2 Degradation linked to oxidation of Cs. • Cesiated AlGaN photocathodes are only appropriate for UHV environments. 20 July 2009

  6. Approach Goal: Demonstrate a non-cesiated III-N based photocathode Cesiation alters surface band structure using low-work function metal Our approach is based on experience with other devices and materials* • Piezoelectrically Enhanced Photocathode (PEPC) • Delta doped Enhanced Photocathode (DDEPC) • Take advantage of lower work function of AlGaN *Hoenk, et al., Nikzad et al., Blacksberg, et al., Delta doped CCDs 20 July 2009

  7. Ec p-AlGaN Ev Delta-layer charge Ionized Mg Acceptors Delta-doped Photocathode Undoped GaN Cap n-delta layer p-GaN sapphire Band bending and QE depend on: Cap thickness Delta-layer n-doping density GaN layer p-doping density 20 July 2009

  8. Schematic of Emission Measurement quartz window UHV chamber tunable light source GaN pc ohmic contact biased anode PC control Keithley 486 A 20 July 2009

  9. IPE Spectrum for GaN / -Si / p-GaN IPE spectrum for delta-doped GaN photocathode. The power-law threshold allows simple extraction of the emission threshold. cap layer 20 July 2009

  10. Effect of Delta-layer Cap Thickness on Emission Intensity Thinner GaN cap layers produce an increase in emission intensity, due to decreased hot-electron scattering. 20 July 2009

  11. Effect of Delta-layer Cap Thickness on Emission Intensity Very short attenuation length for the cap layer indicates strong scattering. Improvement in cap quality is essential. 20 July 2009

  12. Effect of Delta-layer Cap Thickness on Emission Threshold Only a weak dependence of emission threshold on GaN cap layer thickness observed. 20 July 2009

  13. Effect of Si Delta-doping Density on Emission Threshold Bare GaN has a high emission threshold. Si delta-doping produces a rapid reduction of threshold until the conduction band edge reaches the Fermi level. 20 July 2009

  14. Effect of Delta Layer Doping Density on Emission Intensity 3 nm cap 20 July 2009

  15. Effect of Bulk p-Doping on Emission Intensity Increased p-doping of the bulk GaN reduces the width of the surface well, thus decreasing scattering losses during well traversal. 1 nm cap 1014 Si/cm2 20 July 2009

  16. IPE Spectrum for AlGaN / -Si / p-GaN The lower electron affinity of AlGaN reduces the emission threshold, but delta-doping of the AlGaN layer is required. 20 July 2009

  17. Summary III-N photocathode activation is investigated without use of cesiation These techniques offer the advantage of stable response even with exposure to air GaN samples grown on sapphire were examined as delta doped enhanced photocathodes Effect of cap layer, dopant density in the bulk, and dopant density in the delta layer were determined and optimized Work is underway to integrate other effects to achieve true NEA without cesiation 20 July 2009

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