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Previous week. Nanorod growth with increased precursor concentration ITO substrate is used – Al film was dissolved Alignment was not improved. Previous week. TPT overcoat – PDMS conformal contact failed Plasma etching failed to reveal nanorod heads 2 nd growth step is also failed.
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Previous week Nanorod growth with increased precursor concentration ITO substrate is used – Al film was dissolved Alignment was not improved
Previous week TPT overcoat – PDMS conformal contact failed Plasma etching failed to reveal nanorod heads 2nd growth step is also failed
This week TPT injection is not worked because of large particles → Spincoating (Polystyrene/Toluene) is used Plasma etching : failed (sample too close to electrode)
This week Nanowire height is increased ~3x as applied voltage increased from -1.2V to 2.0V Still insufficient to good align (>10um length is required) -1.2V 80C ~1.5um -2.0V 80C ~4.4um
This week Nanowire growth with volage over -2.0V → Nanowires are shorten ITO glass is not appropriate for nanowire growth (No good result without additional seed layer in references) -2.6V 80C -2.3V 80C -2.0V 80C (All picture x15000)
Next week Nanowire growth on ZnO:Al substrate (Good growth is guaranteed, no verification experiment) ① AZO microgap patterning ② PS coating and plasma etching ③ Active channel formation by lateral growth patterned AZO Glass substrate
Zinc deposition Large surface roughness (induces shunt resistance)