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Lenovo - Sony Technical Meeting

Lenovo - Sony Technical Meeting. August 27, 2003 Sony Corp. “Aries” Project Members. Factories & Manufacturing Capabilities. Japan (Sony Fukushima)Cell& Pack (Sony Tochigi)Cell. China (Sony Electronics Wuxi)Cell&Pack. Taiwan (Solectron Taiwan)Pack. Malaysia

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Lenovo - Sony Technical Meeting

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  1. Lenovo - Sony Technical Meeting August 27, 2003 Sony Corp.

  2. “Aries” Project Members

  3. Factories & Manufacturing Capabilities Japan (Sony Fukushima)Cell& Pack (Sony Tochigi)Cell China (Sony Electronics Wuxi)Cell&Pack Taiwan (Solectron Taiwan)Pack Malaysia (Sony Electronics Malaysia)Pack

  4. Cell Information • Cylindrical(US18650) & Polymer

  5. Cell Line Up for PC Battery CELL CY2003 CY2004 CY2005 2150mAh/8.1Wh US18650G5 Cylindrical Cell Nominal 2400mAh/9.1Wh US18650G7 Capacity PC Polymer K2: 2200mAh/8.3Wh K3: 2400mAh/9.1Wh UP5541100 Cell Nominal Capacity

  6. US18650G7, Cell Safety Requirement • Max Charge Voltage; 4.25V/cell(Open Circuit Voltage) • Cell Temperature; Charge ; 0 to 60 deg. C Discharge; -20 to 70 deg. C • Charging Current ; less than 0.7C If capacity is 2400mAh, 0.7C means; 2.4A X 0.7 = 1.68A • Discharging Current; less than 1.0C If capacity is 2400mAh, 1C means; 2.4A X 1 = 2.4A

  7. average capacity 3.75V (average discharge voltage) minimum capacity average capacity average capacity measured by AC1kHz 0.7A discharge Nominal Capacity (0.2C discharge) Rated Capacity (0.2C discharge) Capacity at 0.5C Capacity at 1C Nominal Voltage Internal Impedance Cycle Performance 2400mAh 9.0Wh 2250mAh 8.4Wh 2350mAh (8.6Wh) 2300mAh (8.2Wh) 3.7V 55mΩ 80 % of Initial capacity at 300 cycles US18650G7, Electrical Info. * Standard Charge Condition Charge Method : constant current constant voltage Charge Up Voltage : 4.2± 0.05V Charge Current : 1.0A Charge Time : 5.0 hours charge Ambiance Temperature : 23oC at room temperature, 3.0V cut off

  8. US18650G7, Mechanical Info. Cell Size (with plastic tube) +0.2 -0.2 64.9 φ18.2(Diameter of Top) φ18.2 (Diameter of Body) (φ7.2) +0.15 -0.20 +0.15 -0.20 (0.3)

  9. uP and AFE Information • Micro Processor---bq2083 • Analogue Front End---bq29311

  10. bq-uP Diagram Thermal Fuse with Resistor c-FET d-FET (+) Active Fuse 2ndOver Charge Protector Analogue Front End Micro Processor (C)Clock (D)Data bq2083 bq29311 Batt _Pres Sys _Pres Batt_Alart EEPROM Thermistor (2k) (FETs temp.) 32kHz (-) Thermistor Current sense Resistor (10mΩ) (Cells temp.) *Battery_pres and Sys_pres are not necessary.

  11. bq-uP Schematic (for example)

  12. Mitsubishi-uP Diagram (for example) Pre-charge Active Fuse Batt + ＴＨ1 TH1/TH2：thermistor 2nd Over Charge Protector Data/CLK Micro Processor Mitsubishi ＴＨ2 Data Analogue Front End IC Vdd Clock (output of each cell voltage and current 5V output,Low Battery voltage detect, FET-SW drive,reset function) Clock DIN BattPre DOUT SYSPre BattAlarm AOUT （Ｖ・Ｉ　data） EEPROM 0.07Ω1/2W Batt -

  13. Mechanical Information • UL requires UL flammability “V-1” for enclosure. • Min thickness; 0.8 mm---PC 1.2 to 1.6 mm---PC+ABS

  14. Pack Structure (for example) * Connection tab and thermal fuses are replaceable to other components.

  15. Development Schedule Fiscal year ’03/3Q 4Q ’04/1Q 2Q 3Q 4Q 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 Design EVT (Hand Made Case) *EVT sample 2 pcs. Hard Tooling (Min. 2 months) DVT (Hard Tooling Case) *DVT sample 20 pcs. (Min. 1.5 months) Safety Application Design Approval PVT *PVT sample 50 pcs. Mass Production MP

  16. WELCOMETO SONY ELECTRONICS WUXI（SEW) 索尼電子（無錫）有限公司

  17. Wuxi Summary Location：East longitude119º31’ North latitude31°７’ Beijing East of China、the center of Changjiang delta area Wuxi 103Km from Shanghai、147Km from Nanjing Shanghai Area： 4,650km²DT: 517.7km² Population： 5 millionDT 1.2 million Industry lines：　 Mechanism、Electronics、Light-industries、Textile、Chemical、Pharmaceutical GDP： 120.1billion in 2000 、one of the first ten in the country GDP RMB28,000/person、the 4th in the country Traffic： Express way to SHA & Nanjing、312 National Road、Railway to SHA & Nanjing Education： Jiangnan University

  18. New District Industrial Zone Summary Location: At the east-south of Wuxi city, 6Km from downtown. Character: National Hi-tech Industrial Development, No. 1 of the best 50 national hi-tech industrial development Favorable policy: Income tax rate 15% (Normal area 30%, littoral area 24%） 2 years’ income tax-free, 3 years’ income tax half-paid Hi-tech enterprise , - 5 free 5 half Enterprises come in this district： America :Seagate、Kodak、GE German :SIEMENS、BOSCH、Bayer、HOIST Sweden :VOLVO、 Astra English :COMINS、Rexam Japan :SHARP、Alps、Murata、Sumitomo、Hitachi、 National、Toshiba、Maruko、Nittobo

  19. Company Profile ● Date of incorporation : August 22nd/2000 ● Leading Company : Energy Company ● Ownership : Sony China 100%, Registered Capital : US$29.5mil ● Board Chairman : Hiroshi Nakagawa Vice Board Chairman : Masaru Suzuki Managing Director : Taizo Suzuki ● Address : 62 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Lithium-Ion Polymer Battery, Land Area : 110,000㎡, Factory-site 10,600 ㎡ ● Rental Address : 52 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Projector TV, Factory-site 3,855㎡ ● New Plant Address : 64 Block, - ditto - . Main Products : Electronics Devices. Land Area : 210,000㎡, Factory-site ( Initial ) : 19,100㎡ ● Employee As of Apr/2003 : 1,305 persons, include 11 persons of Japanese (Battery)

  20. Sony China Battery Div- Sales Network Marketing & Sales Office SalesBranch Manufacture Beijing (北京) Branch Shanghai (上海)Sales & Marketing Office Shenzheng (深圳) Branch Sony Hong Kong Sony Wuxi (無錫） Electronics

  21. Business Terms • Development Cost :1) NRE – New model development fee2) Sample Fee3) Tooling Fee • Delivery Terms : ex-Sony Wuxi Factory or CIF Lenovo Shanghai Factory • Warranty : 12 months after manufacturing date

  22. Questions • Contact window for business matter ?(Procurement for R&D parts and MP parts) • Function of Beijing team and Shanghaiteam ?

  23. Appendix-1; Discharge Curves of US18650G6

  24. Appendix-2; Charge Curves of US18650G6

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