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Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese

Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese. Work in progress within the Bari group. ISS specs and directions. Develop a solid state 64 pixel probe for g -ray imaging. Energy of the g photon : 140 keV. Event rate: 4 kHz. Probe area: 22mm x 22mm.

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Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese

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  1. Front-end electronics for silicon detectorsF. Corsi, C. Marzocca, G. Matarrese Work in progress within the Bari group Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  2. ISS specs and directions • Develop a solid state 64 pixel probe for g-ray imaging. • Energy of the g photon : 140 keV. • Event rate: 4 kHz. • Probe area: 22mm x 22mm. • Spatial res.: <2 mm. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  3. Si detectors • Avalanche photo detectors; • good energy res. : ENC/M; • a portion of the leak. curr is increased by M; • high sensitivity of M to Vsupply and to T (2.5% /°C): diff. bias requirements; • poor linearity for charge measurement appl. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  4. Si detectors • Silicon drift detectors; • good energy res. (low anode cap.); • good linearity (depending on det. design); • suitable for probe application; • leakage current (cooling); • double face processing. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  5. Si detectors • PIN diodes; • acceptable energy res. (dep. on Ileak and CD.); • exc. linearity; • low fab. cost; • active pixels; • simple readout scheme. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  6. (ENC/M) Si detectors: ENC vs sh. time (Fiorini) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  7. 0.9 mm 1st DESIGN of PIN + JFET structure (1999): PIN Diode Area = 0.32 mm2 ; JFET’s W/L = 200/12 mm. Tethrode, or double-gate JFET configuration: two separate front-gate / back-gate (p-well) contacts. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  8. 2nd DESIGN of PIN + JFET structure: Size = 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/6 Smaller JFET cap + integrated feed-back and injection capacitors + p-stop floating ring (to reduce parasitic guard ring Cap) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  9. other layout of PIN + JFET structures: 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/4 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  10. Character. of PIN diodes by IRST • eff. act. area.: 3mm2; • peak wav.: 550nm; • resp. @ 550nm: 0.37A/W; • Quantum eff. @ 550nm: >80%; • Ileak < 50pA; • CD=1pF; • Cut-off freq.:110 MHz. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  11. Provis. design assumptions • PIN diodes (active area+interc.); • Segmented scint.: 5000 vis.ph/g ph; • 2000 - to - 4000 el./g ph/det. pix.; • FE ARCH.: CSA+SH.+LATCH.- DISC.; • ENC <150 e- r.m.s. (Ileak=50pA, CD+Cbond=1.2 pF); Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  12. 2 thresh. latched . discr. Front-End structure Analogue Front-End C f Test Input Shaper Delay line g m 2nd Ord. C o C C i d Detector Shaper_out CSA_out from trigger circuitry to fast-or circuitry Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  13. to PC Probe architecture Read-out clock: fck=160kHz Trigger from fast OR circuitry 2nd lev. 1st lev. to PC Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  14. Probl. in deep sub-m. tech. • Stat. fluctuations of the FE performances. • Mismatch problems beween circuit replicas (both intra-chip and inter-chip) at extr. low currents. • Need of a robust design of the circuitry against process par. fluctuations. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  15. CSA solutions • Adaptive Ileak canc. (Krummenacker); Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  16. CSA solutions (cont’d) • Adaptive P-Z canc. (Rehak et al.) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  17. Adaptive Vfp bias Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  18. Adaptive Vfp bias Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  19. Some exp. result on the adaptive P-Z CSA • CSA in 0.8 mm CMOS for SDD (spectroscopy) External shaper Internal shaper (adaptive pole-zero canc.) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  20. Provisional conclusions and workplan • Preliminary experiments with A250 (Amptek) FE; • use of the adaptive P-Z CSA; • design and fab. of first prototypes of CSA in deep submicron CMOS; • electr. and stat. characterization of prot’s. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

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