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Microelectronics Processing Course Introduction

Microelectronics Processing Course Introduction. Conductivity in solids. Resistivity  [  cm]. 10 -8. 10 18. 10 8. 10 -3. Glass. Ag. Si. Pure Diamond. Cu. GaAs. Al. Quartz. 10 -18. 10 3. 10 -8. 10 8. Conductivity  [  cm] -1. Conductors. Insulators.

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Microelectronics Processing Course Introduction

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  1. Microelectronics Processing CourseIntroduction Microelectronics Processing Course J. Salzman Fall 2006

  2. Microelectronics Processing Course J. Salzman Fall 2006

  3. Conductivity in solids Resistivity  [  cm] 10-8 1018 108 10-3 Glass Ag Si Pure Diamond Cu GaAs Al Quartz 10-18 103 10-8 108 Conductivity  [  cm] -1 Conductors Insulators Semiconductors Microelectronics Processing Course J. Salzman Fall 2006

  4. History • 1904 Vaacum Tube • Concept of Field Effect Transistor • 1947 Bipolar Transistor • Bipolar IC • MOS Transistor • 1961 IC-MOS Technology • 1972 MOS Microprocessor Microelectronics Processing Course J. Salzman Fall 2006

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  7. Moore Law(Gordon Moore 1965) The number of transistors in a chip will be doubled every 18 months Microelectronics Processing Course J. Salzman Fall 2006

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  11. MOS Transistor Gate Source Drain Microelectronics Processing Course J. Salzman Fall 2006

  12. MOS Transistor Gate Source Drain Electrons in inversion layer Microelectronics Processing Course J. Salzman Fall 2006

  13. W Drain L Gate tox Source Substrate Schottky contact Metal contact Si2O Microelectronics Processing Course J. Salzman Fall 2006

  14. Optical Measurements • Photometric • Interferometric • Polarization • Spectroscopic Microelectronics Processing Course J. Salzman Fall 2006

  15. Basic Optical Instruments • Microscope • Reflectometer (Nanospec) • Ellipsometer Microelectronics Processing Course J. Salzman Fall 2006

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