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High-Brightness InGaN–GaN Power Flip-Chip LEDs

Shoou-Jinn Chang , Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin. High-Brightness InGaN–GaN Power Flip-Chip LEDs. JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009. Sum DJ. Outline. Introduction

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High-Brightness InGaN–GaN Power Flip-Chip LEDs

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  1. Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin High-Brightness InGaN–GaN Power Flip-Chip LEDs JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009 SumDJ

  2. Outline • Introduction • Experiment • Results and discussion • Conclusion • References

  3. Introduction • In this work, we report the fabrication of InGaN–GaN power flip-chip (FC) LEDs using grinding to rough the backside surface of sapphire substrate.

  4. Experiment Ag(200nm) Ni(1nm) ITO(15nm) SPS five-period In0.23Ga0.77N (5Å)/GaN(5Å) @1050ºC p+-GaN(0.25µm)@ 1050ºC EBL p-Al0.15Ga0.85N(50nm) @1050ºC MQW five-period In0.23Ga0.77N(3nm)/GaN(7nm) @770ºC Ti/Al/Ti/Au n+-GaN(3µm)@ 1050ºC GaNnucleationlayer(50nm) @ 550ºC Sapphire (2-inch) chip size：1mm × 1mm

  5. Results and discussion

  6. Results and discussion

  7. Results and discussion

  8. Results and discussion

  9. Results and discussion 455nm

  10. Results and discussion LED-I：366.5mW LED- II：271.8mW LED-III ：185.1mW @700mA 700mA

  11. Results and discussion 0.35A

  12. Results and discussion

  13. Conclusion • We can achieve a 200 times larger peak-to-valley distance on the backside sapphire substrate by conventional lapping/polishing. • It was also found that we can simultaneously enhance output power and improve device reliability by roughening sapphire backside surface of the power FC LEDs.

  14. References • Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin“High-Brightness InGaN–GaN Power Flip-Chip LEDs,” J. Lightwave Technol. VOL. 27, NO. 12, JUNE 15, 2009

  15. Thanks for your attention !

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