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Fig. 6. Electron concentrations within the active regions for the four LEDs at 180 mA .

Fig. 6. Electron concentrations within the active regions for the four LEDs at 180 mA. Fig. 7. Hole concentrations within the active regions for the four LEDs at 180 mA. Fig. 8. Radiative recombination rates within the active region for the four LEDs at 180 mA. Droop%. Con EBL=55.2%.

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Fig. 6. Electron concentrations within the active regions for the four LEDs at 180 mA .

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  1. Fig. 6. Electron concentrations within the active regionsfor the four LEDs at 180 mA. 22

  2. Fig. 7. Hole concentrations within the active regions for the four LEDs at 180 mA. 23

  3. Fig. 8. Radiative recombination rates within the active region for the four LEDs at 180 mA. 24

  4. Droop% Con EBL=55.2% D:5nm EBL = 35.4% Output power D:5nm / con =2.69 Fig. 9. (color online) Curves of (a) internal quantum efficiency and (b) light output power versus injection current for the four LEDs. 25

  5. Conclusion When used a sawtooth-shaped EBL, the effective barrier height of the conduction band is increased and the barrier obstacle in the valence band for holes is mitigated due to the correctly modified energy band of the EBL. The electron confinement is enhanced and more holes can be transported from the p-type region into the MQW. This effect prevents electron leakage and improves the radiative recombination rate in the QW, leading to a significant improvement in IQE and light output power. 26

  6. References [21] Fiorentini V, Bernardini F and Ambacher O 2002 Appl. Phys. Lett. 801204 [22] Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675088504- 27

  7. Thanks for your attention. 28

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