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IBL Design

IBL Design. IP. Staves. Transition to cables. Services. Underside of stave: IBL modules. 2. Present IBL status: FE-I4 . AWN6TUH: 78% green . ~2 cm. FE-I4 R/O Chip 27 k Pixels 87 M transistors. ~2 c m. Wafer received : 16 in hands and 20 more available Tests

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IBL Design

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  1. IBL Design IP Staves Transition to cables Services Underside of stave: IBL modules 2

  2. Present IBL status: FE-I4 AWN6TUH: 78% green ~2 cm FE-I4 R/O Chip 27 k Pixels 87 M transistors ~2 cm • Wafer received : 16 in hands and 20 more available • Tests • Very high (green) yield (6 wafer fully tested, yield ~70%). • Irradiated with protons • 6, 75 and 200 Mrad. All chips working after irradiation. Analog performance little affected (Noise, Threshold). • Those chips tested by: • Single Chip (SC) cards : chip only • Wafer probing, now automated • SC cards with FEI4+ sensor (bump-bonded at IZM) • Analog performance is very good: • Low number of bugs and changes for final version, submission of final version planned before summer • Test on going with Planar n-on-n (CiS) sensor and 3D (FBK). • Non irradiated and irradiated sensor currently at DESY test beam • 3 wafers of 3D sensors from CNM are being bump-bonded at IZM with FE_I4.

  3. First results with CiS planar n-on-n sensors • DESY Testbeam(Feb 2011) results with CiS n-in-n slim-edge planar sensors • 3200 e- threshold • 99.9 % efficiency • Irradiated devices under test at DESY test beam (Apr 2011)

  4. First Results with FBK 3D and FE-I4 • FBK 3D sensor (device 2-4) • Threshold 1500 e- sensor -9V • DESY Test Beam (April 2011) • Hit map with • FBK 3D sensor (device 2-5) • Threshold 1500 e- sensor -15V • Tested with Am241 gsource • Now irradiated, in test at DESY Am241 source scan in self trigger Beam hit map Am241 peak Trigger scintillator Ovf bit – noise from white scratches in hit map

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