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Target

r / mm. Target. 4. r max = 150 mm. 3. 2. 135. 1. Beam. 95. 1. 55. 2. 3. 4. 25. 5. 6. -230. -170. 6 disk layers 4 barrel layers Silicon detectors : Hybrid pixel detectors Double - sided microstrip detectors. 20. 40. 70. 100. 160. 230. z / mm. Target. Beam.

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Target

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  1. r / mm Target 4 rmax= 150 mm 3 2 135 1 Beam 95 1 55 2 3 4 25 5 6 -230 -170 • 6 disk layers • 4 barrel layers • Silicon detectors: • Hybrid pixel detectors • Double-sided microstripdetectors 20 40 70 100 160 230 z / mm

  2. Target Beam • Implementation • Approx. 11 million pixel readout channels • Approx. 200. 000strip readout channels

  3. Detailed CAD model Detector simulation Detailed model including routing Active detector volumes only

  4. Overall routing concept  (7.6 … 15.0) cm Circular occupancy Bundling (top/bottom) Beam Circular or bundled Patch Panels 60 z / cm -100 -40 -23 0

  5. Main MVD parts Overall detector integration 2 pixel half-barrels 2 strip half-barrels 6 pixel half-disks 2 strip half-disks MVD attachment Global frame (MVD): 2 halves 3 point fixation Central support frame

  6. Mechanics • Cooling concept • Coolant: Water (18°C) • Vacuum-operated mode using hydrostatic pressure • Active part: ext 2 mm pipe (Ni-Co alloy) • Upstream routing: ext 4 mm flexible plastic pipes Barrel layer Infrared image Micro fittings: Thermoplastic resin 31°C 23°C Glue: Epo-Tek H70 Glue: Master Bond Glue: ArticSilver Thermal FEM analysis Tmax = 37.2°C Tmax = 28.2°C Tmax = 30.4°C Test setup

  7. Mechanics • Lightweight support structures Local support (barrel modules) MVD half support frame R = 137 mm L = 460mm S = 3.8 mm • Sandwich structure: (Carbon – Rohacell – Carbon) • Stiffening structure:2...4 layers of carbon fibre (400 m) HTC foam half disk embedding cooling pipes Barrel layer support

  8. Detector development: Front end electronics • ToPix: Custom designed readout chip • Specifications • Untriggered readout • High output bandwidth • 116  110 pixel matrix (100  100 m2 cell size) • Time over threshold technique (TOT) for amplitude measurement • Low power consumption (< 500 mW/cm2) • CMOS 130 nm technology • Measurements • Testing procedures • Total ionizing dose test • ToPix prototype connected to epi-sensor

  9. Detector development • Pixel sensor • Specifications • Epi-Silicon layer: (50 ... 100) m • Thinned Cz silicon substrate:  50 m • Alt.: Thinned oxygen enriched silicon • Measurements • Sensor characterization • Radiation damage test (neutrons)

  10. Count rates • Maximum countrates / frontend: (1 ... 10) Mevts/ s • Integrated count rate (pixel part): 1.8 Gevts / s • Integrated count rate (strip part): 1.2 Gevts / s Full MVD: 3.0 Gevts / s

  11. Spatial coverage • 2D mapping: Number of MVD points / track • Design optimization for a minimum of 4 track points Active MVD volumes Number of MVD points / track

  12. Radiation length studies (Geantino) • 1D profile scan for polar angle • Minimized material budget for polar angle < 140° • Higher values above 140° due to upstream routing • Slight enhancement  40° due to lead-out of pixel disk services Detailed MVD model < 1% / layer ( < 10%)

  13. Momentum resolution 1 GeV/c pions (0;0;0) (p) without MVD = 2.6 % (p) with MVD = 1.4 % pt p (pt) without MVD = 2.9 % (pt) with MVD = 1.4 % •  Improvement by 50% z xy • Single track resolution •  No resolution along z without MVD

  14. Primary vertex resolution 15 GeV/c • Vertex resolution (6.57 / 7.50 / 8.50) GeV/c  Primary and secondary vertex resolution:x,y 35 m z 100 m z 65 m z xy

  15. Physics analysis • Reconstruction: d0 d0 Conservative estimate 6 orders of magnitude lower decay length Scaled back- ground Vertex cut: S/N =1 S/N  2 23% efficiency arXiv:0903.3905v1 [hep-ex]  Background suppression for open charm channels impossible without MVD

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