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Update on Bump Bonding

Update on Bump Bonding. Phone meeting with VTT. 6/8/2008 (Michael, Petra) Prepared a set of questions as collected before (Flavio, Jan, Pierre, …) Mainly concerning sensor design. Sensor Edge Design. How far from the active pixel cell can the dicing lane be placed

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Update on Bump Bonding

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  1. Update on Bump Bonding

  2. Phone meeting with VTT • 6/8/2008 (Michael, Petra) • Prepared a set of questions as collected before (Flavio, Jan, Pierre, …) • Mainly concerning sensor design

  3. Sensor Edge Design • How far from the active pixel cell can the dicing lane be placed • Question needs to be re-discussed with FBK (depends on wafer doping, etc.) • VTT recommendation: at least 560 µm between last active pixel and centre ofdicing lane ; reserve 100 µm between sensors for dicing;

  4. Arrangement of Structures on the Sensor Wafer • VTT recommendation: place prototype chips such that they do not interfere with large sensor dicing; do not place metal on dicing lanes; minimize the number of cuts; wafer large sensor 5 x 2 chips

  5. Placement of Chips on Final Sensor • How big should the distance between diced chip edges be? • Is the “dynamic bump position” on the sensor a problem? • What should be the minimum distance of the bump wrt the active edge of the cell on the sensor? • VTT recommendation: leave at least 100 um between chip edges; “dynamic bump position” poses no problem; Keep at least 30 µm between the pixel metallisation edge and the bump pad center;

  6. Bump Pad Size • Assuming an octagonal pad (ALICE, Medipix, …) what is the preferred bump pad size and bump size. • Taking into account that the MOSIS run will have a 3-5 µm polyimide passivation. • VTT recommendation: preferred passivation opening: 20 µm, bump diameter: 30 µm.

  7. Bump Transfer • Method proposed for prototype chips • Protection of the wire bonding pads during the UMB (under bump metallisation) and wettable metal deposition still needs to be worked out in detail. • Further discussions with VTT needed

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