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Cypress Introduces the Industry’s First 4Mb Serial F-RAM

Cypress introduces the industry's first 4Mb Serial F-RAM, a high-density, high-reliability, and energy-efficient NVRAM solution for mission-critical systems in various markets. This product offers superior performance compared to alternative nonvolatile memories such as EEPROM and MRAM.

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Cypress Introduces the Industry’s First 4Mb Serial F-RAM

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  1. Cypress Introduces the Industry’s First 4Mb Serial F-RAM New Product Introduction: 4Mb Serial F-RAM™ 4Mb Serial F-RAM New Product Introduction

  2. NVRAM1: Rapid Growth, Broad Markets • The Global TAM2 forecast for NVRAMs is $590M in 2014 with a 10% CAGR through 20183 • Cypress’s 4Mb F-RAM serves many high-growth NVRAM markets, including: • Multifunction printers • Industrial controls and automation • Medical wearables • Test and measurement equipment • Smart meters • The mission-critical systems used in these high-growth markets must reliably capture and store large amounts of data on power loss • These systems require high-density, high-reliability, high-enduranceand energy-efficient NVRAMs • Alternative nonvolatile memories, such as EEPROM and MRAM, cannot match F-RAM performance • Mission-critical systems require high-density NVRAMs with superior reliability, endurance and energy efficiency Serial F-RAM 1 A nonvolatile memory (NVM) that allows direct access to stored data in any random order 2 Total available market 3 Source: Web-Feet Research 4Mb Serial F-RAM New Product Introduction 3a

  3. Cypress Is the NVRAM Market Leader • Cypress offers the largest portfolio of serial and parallel NVRAM products • F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs • nvSRAM, the industry’s fastest parallel NVRAMs • Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products • F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance1 • F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V • SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages • F-RAM products offer optional real-time clocks and event counters • Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products • 25 ns access times are available with unlimited Write Endurance • Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage • Asynchronous x8, x16, x32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages • Integrated real-time clocks are also available on nvSRAM products • Cypress: • Was the first to produce F-RAM and nvSRAM products • Has shipped more than 1 billion NVRAM units • Provides products that meet the most rigorous automotive and military standards • Assures long-term supply of F-RAM and nvSRAM products • Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times an NVM cell can be rewritten before it wears out 4Mb Serial F-RAM New Product Introduction 3b

  4. Serial Nonvolatile Memory Terms NVM Hierarchy • Nonvolatile Memory (NVM) • Memory that retains its information on power loss • Nonvolatile Random Access Memory (NVRAM) • NVM that allows direct access to stored data in any random order • Electrically Erasable Programmable Read-Only Memory (EEPROM) • A common NVM that uses floating-gate technology to store data • Ferroelectric Random Access Memory (F-RAM) • A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data • Nonvolatile Static Random-Access Memory (nvSRAM) • Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss • MagnetoresistiveRandom Access Memory (MRAM) • An NVRAM that uses the magnetism of electron spin to store data • Page Write • A write to a fixed-length contiguous block of memory • Soak Time • The approximate 10 ms required for a 2Mb EEPROM to complete a Page Write after the data is presented at the input buffers • Write Endurance • The number of times an NVM cell can be rewritten before it wears out • Wear Leveling • A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached NVM NVRAM EEPROM F-RAM nvSRAM MRAM 4Mb Serial F-RAM New Product Introduction 4

  5. Serial NVM Design Problems • 1. Many electronic devices must reliably capture and store large amounts of data in NVM on power loss • EEPROMs are only available up to 2Mb in density • 2Mb EEPROMs require a 10-ms continuation of active power per Page Write for Soak Time • Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability • Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields • 2. Many data-logging applications exceed EEPROM’s 1-million write-cycle limitation • Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan • Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost • 3. Systems using EEPROM and MRAM consume excessactivepower • For the 10 ms required for 2Mb EEPROM Soak Time per Page Write • For the processing required to do EEPROM Wear Leveling • For the very high active and sleep currents consumed by MRAM • Cypress’s serial F-RAM solves these problems • Offers densities up to 4Mb • EliminatesSoak Time and the need for additional capacitors or batteries to complete a Page Write on power loss • Protects data with radiation- and magnetic field-tolerant F-RAM memory cells • Provides100 trillion write cycles (31,710 years at 10-ms write frequency),eliminating the need for Wear Leveling • Consumes 2x to 5x less active power than EEPROM and 45x less active power than MRAM • Cypress’s high-reliability 4Mb F-RAM offers 100 million times the endurance of EEPROM and consumes less active power than EEPROM and MRAM 4Mb Serial F-RAM New Product Introduction 5

  6. Serial F-RAM Is a Better Solution Simplify a conventional, complex, EEPROM-based design… By choosing F-RAM asyour serial NVM solution… To produce better solutions formultiple applications at a lower cost, especially for mission-critical applications. 8 x 2Mb for a 4Mb System 4x EEPROM capacity for Wear Leveling • Multifunction Printers Industrial Controls and Automation Medical Wearables • Test and Measurement Equipment • Smart Meters File System Controller Memory Worn Cell Wear Leveling software algorithm to increase EEPROM Write Endurance F-RAM pin-for-pin replacement for EEPROM SOIC8 Additional capacitor to maintain power for 10 ms per Page Write for Soak Time 4Mb Serial F-RAM New Product Introduction 6

  7. Cypress 4Mb Serial NVRAM vs. Competition’s • 1 2Mb Fujitsu serial F-RAM; Fujitsu does not offer 4Mb serial F-RAM • 2 2Mb ST serial EEPROM; ST does not offer 4Mb serial EEPROM • 3 Comparable write frequency limited by EEPROM’s Soak Time4 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, -40°C to +85°C5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 4Mb Serial F-RAM New Product Introduction 7

  8. F-RAM PortfolioLow Power | High Endurance FM25H20/V20 2Mb; H20: 2.7-3.6 V V20: 2.0-3.6 V 40 MHz SPI; Ind1 CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind1 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind1 NEW FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind1 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind1 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI;Auto E3 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind1 NEW 512Kb - 8Mb CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A2 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A2 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1 NEW NEW FM25V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind1, Auto A2 FM24V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 3.4 MHz I2C; Ind1, Auto A2 FM33256 256Kb; 3.3V; 16 MHz SPIInd1; RTC4; Power Fail Watchdog; Counter Wireless Memory NDA Required Contact Sales FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind1 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1, Auto A2 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind1 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind1, Auto E3 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter 4Kb - 256Kb FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 Production Sampling Development Concept Status 1 Industrial grade −40ºC to +85ºC 2 AEC-Q100 −40ºC to +85ºC 3 AEC-Q100 −40ºC to +125ºC 4 Real-time clock Availability QQYY QQYY 10a

  9. nvSRAM PortfolioHigh Density | High Speed CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI3 1.0 x8, x16; Ind1 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind1 RTC2 Higher Densities DDRx6nvSRAM NDA Required Contact Sales Higher Densities QSPI5nvSRAM NDA Required Contact Sales CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 512Kb - 16Mb CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7; RTC2 CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7 NEW NEW CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B101I 1Mb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind1RTC2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512I 512Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind1 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind1 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil4 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind1RTC2 CY14B256I 256Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 64Kb - 256Kb STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B064I 64Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 Production Sampling Development Concept Status 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate 7 Extended Industrial grade −40ºC to +105ºC 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Availability QQYY QQYY 10b

  10. 4Mb SPI Serial F-RAM Applications Block Diagram Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters 4Mb SPI Serial F-RAM Control Logic 4 Control F-RAM Array Instruction Register Features • 40-MHz SPI interface • 100-trillion read/write cycle endurance • Operating voltage range: 2.0-3.6 V • Low (8-µA) sleep current • 100-year data retention • Industrial temperature operation • Packages: 8-pin TDFN, 8-pin SOIC Address Register Serial Input Serial Output Data I/O Register Status Register Availability Collateral Sampling: Q2 2015 Production: Q4 2015 Preliminary Datasheet: Contact Sales 4Mb Serial F-RAM New Product Introduction 11

  11. Here’s How to Get Started • Download the SPI Guide for F-RAM • Register to access online technical support: www.cypress.com • Request a preliminary datasheet: Contact Sales Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh Motor Control by SEW 4Mb Serial F-RAM New Product Introduction 12

  12. APPENDIX 4Mb Serial F-RAM New Product Introduction 15

  13. 4Mb F-RAM Product Selector Guide Serial F-RAM Part Numbering Decoder CY15B104 Q – XXXI Temperature Range: I = Industrial Pb Content: X = Pb-free Package: S = 8-SOIC, LH = 8-DFN Interface: Q = SPI Density: 104 = 4Mb Voltage: B = 2.0 to 3.6 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 4Mb Serial F-RAM New Product Introduction 16

  14. References and Links • Cypress Nonvolatile Products website: www.cypress.com/nonvolatile • The source for all of our publicly available nonvolatile product documentation and collateral • Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap • Datasheets and NDA roadmap requests: Cypress Sales Representative or email cypressfram@cypress.com • Application Notes: Nonvolatile Products Application Notes • Knowledge Base Articles: Nonvolatile Products Knowledge Base Articles 4Mb Serial F-RAM New Product Introduction 18

  15. $17.28 $0.39 $0.39 $0.50 $0.50 $18.17 4Mb Serial F-RAM Solution Value CompetitorEEPROM: (8x) ST M95M02 2Mb Price: (8 x $2.16): $17.281BOM Integration10-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.391Additional ValueWear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 100,000 units Value Added: $0.50 Competitor Capacitor for 10-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 32% Total Savings: CY15B104Q-SXI $12.322 $5.85 1 Digikey website 1ku pricing on 02/24/2015 2 Future 1ku Cypress website pricing on 02/24/2015 4Mb Serial F-RAM New Product Introduction 19

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