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Ion Beam Analysis Today and Tomorrow

Ion Beam Analysis Today and Tomorrow. Ferenc Pászti Research Institute for Particle and Nuclear Physics, Budapest. 20+5 min. IBA. RBS. NRA. PIXE. ion. ERD. Ion Beam Synthesis. Doping. Damage. Ion Implantation. The incident beam. Accelerators - Used ones (5 MeV VdG, …)

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Ion Beam Analysis Today and Tomorrow

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  1. Ion Beam Analysis Today and Tomorrow Ferenc Pászti Research Institute for Particle and Nuclear Physics, Budapest 20+5 min

  2. IBA RBS NRA PIXE ion ERD Ion Beam Synthesis Doping Damage Ion Implantation

  3. The incident beam • Accelerators • - Used ones (5 MeV VdG, …) • - Smaller and cheaper (200 keV FIB, …) • - Special designs (3 MeV Tandem) • Radioactive sources (planetary research) • Beam size • - Normal (1x1 mm2) • - Microbeam (1x1 mm2)

  4. 5 MeV Van de Graaff Accelerator (EG-2R) at RIPNP, Budapest

  5. 1MeV tandem at Cambridge (GC¯AMS) B. J. Hughey, Nucl. Instr. Meth. B 172 (2000) 40.

  6. 2MeV Tandem at Louvre Paris (AGLAE) http://www.culture.gouv.fr/culture/conservation/fr/methodes/aglae.htm

  7. RBS

  8. Main parameters • Elements è heavier than the ion • Isotopes è for light elements • Depth of analysis è few 100nm (few mm) • Depth resolution è few 10nm (few Å) • Sensitivity è few at% (light) - • few 100 ppm (heavy)

  9. Channel Number RBS spectra (3.045 MeV 4He) of Co implanted Si and a porous Si. A.R.Ramos, Nucl. Instr. Meth. B 178 (2001) 283.

  10. ERD

  11. Suppressing the scattered ions • Absorber foil • Kinematics • Coincidence • Element identification (DE-E, TOF-E, ExB…) • …

  12. Main parameters • Elements è Lighter than the ion Isotopes è for light elements • Depth of analysis è few 100nm • Depth resolution è few 10nm (few nm) • Sensitivity è few 0.1% (few ppm)

  13. ERD spectrum from a thin, 200 Å, deuterated polystyrene film J. Russel, Mat. Sci. Eng. R 38 (2002) 107.

  14. 2D ERD spectra from a GaN film with impurities (200 MeV Au ions, DE-E gas detector) H. Timmers, Nucl. Instr. Meth. B 190 (2002) 393.

  15. NRA

  16. Suppressing the scattered ions • Ions (p, d, a, …) • Positive Q value, filter foil • n or g • Special detectors

  17. Main parameters • Elements è specific • Isotopes è specific • Depth of analysis è few 10nm - few mm • Depth resolution è few nm - few mm - ∞ • Sensitivity è few ppm

  18. 12C(d,p)13C NRA spectra of olivine with 1000 ppm C content (1.45 MeV d, 9 mm Al filter foil) M.E.Varela, Geochimica et Cosmochimica Acta 64 (2000) 3433

  19. PIXE

  20. Main parameters • Elements è heavier • Isotopes è no • Depth of analysis è few mm • Depth resolution è no • Sensitivity è few % - few 10 ppm

  21. PIXE spectra taken from tissues of thyroid Normal Adenoma Cancer S.B. Reddy, Nucl. Instr. Meth. B in print

  22. Channeling

  23. Basic principle of channeling

  24. Channeling RBS spectra of He and N-implanted and annealed Si. Virgin and random spectra are also included. (1016 ion/cm2 units) A. Manuaba, Nucl. Instr. Meth. B (2001) 63

  25. Lattice localization of Er in sapphire by RBS/channeling E. Alves, Nucl. Instr. Meth. B 106 (1995) 429

  26. Microprobe

  27. Schematic diagram of the 200 kV FIB microprobe at Osaka University. 80 nm lateral resolution, Si, Be Au ions. J. Tajima, Nucl. Instr. Meth. B 181 (2001) 44.

  28. 300 keV Be2+ Secondary electron and RBS mapping images by the FIB microprobe. Y.K. Park, Nucl. Instr. Meth. B 158 (1999) 487.

  29. Future

  30. New accelerators for IBA • Cheaper and smaller accelerators for routine applications • Larger used machines (HI-ERDA) • Better microprobes • Transportable IBA?

  31. Unique features • Channeling for damage profiling and lattice localization • H depth profiling • Atomic depth resolution • Extreme sensitivity

  32. New methods appear • Pore structure determination by resonance method • Combination of TOF-RBS and TOF-SIMS by a nanoprobe • …

  33. R-BS spectra on columnar porous Si (3045+100 keV 4He+). The peak is due to 16O(a,a) resonance. At tilt 0° the beam is parallel to the pores. F. Pászti, Vacuum. 50 (1998) 451.

  34. Half-width of the resonance peak for samples implanted at various tilts and fluencies. Solid lines are fitted Lorentzian curves. F. Pászti, Nucl. Instr. Meth. B 161-163 (2000) 963.

  35. As implanted SiO2 As implanted Si 25 nm Au on Si 200 keV Si2+ TOF spectra by the 200keV FIB. H, O, C peaks are due to secondary ions accelerated by the 1.8 kV detector bias of the MCP (TOF-SIMS). K. Iwasaki, Nucl. Instr. Meth. B 190 (2002) 296.

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