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Microelectronics User Group Meeting

Microelectronics User Group Meeting. TWEPP 2012, Oxford, UK 19/9/2012. Agenda. “News on foundry access services via CERN” by Kostas Kloukinas (CERN) (10’) “ 65nm technology: Design tools and foundry access services plans. ”

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Microelectronics User Group Meeting

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  1. Microelectronics User Group Meeting TWEPP 2012, Oxford, UK 19/9/2012

  2. Agenda • “News on foundry access services via CERN” by Kostas Kloukinas (CERN) (10’) • “65nm technology: Design tools and foundry access services plans.” by Sandro Bonacini (CERN)(30’) • “Open Discussion with emphasis on 65nm technologies” (1h20’) Kostas.Kloukinas@cern.ch

  3. News on foundry access services via CERN TWEPP 2012, Oxford, UK 19/9/2012

  4. Overview of Technologies • Foundry services & Technology technical support provided by CERN. CMOS 8RF-LM Low cost technology for Large Digital designs CMOS 8RF-DM Low cost technology for Analog & RF designs BiCMOS 8WLCost effective technology for Low Power RF designs BiCMOS 8HP High Performance technology for demanding RF designs CMOS 6SF Legacy designs 130nm CMOS 250nm CMOS • Legacy technology IBM CMOS6SF (250nm) • Mainstream technology IBM CMOS8RF-DM (130nm) • Full support: CERN compiled Mixed-Signal design kit • BiCMOS variants are not very popular. • Advance technology IBM CMOS9LP/RF (90nm) • Limited support: Project specific. • Future technology (65nm) • For LHC upgrade applications. • Under evaluation. • No user support yet. CMOS 65nm High performance technology for dense designs CMOS 9SF LP/RF High performance technology for dense designs 65nm CMOS 90nm CMOS Kostas.Kloukinas@cern.ch

  5. 130nm MPW activity • CERN participates on all MOSIS MPW runs (4 runs/year)and organizes ad-hoc MPWs with the foundry for high volume and/or area demanding prototyping. • CMOS8RF-DM (3-2-3) is the dominant metal stack option. • Prototyping and Engineering run costs are kept the same for the last 2 years. • Evolution of the Prototyping activity on CMOS8RF for the last 5 years Kostas.Kloukinas@cern.ch

  6. 130nm MPW in July 2012 test structures Reticle Size: X= 14,595, Y=14,710 Chips per Wafer: 112 Process Split MPW run Design process CBC2 C4 TOFPET wirebond XFEL2 wirebond Test structures wirebond Submitted in July 2012 TOFPET CBC2 XFEL2 Kostas.Kloukinas@cern.ch

  7. 130nm Major Projects • Gigabit Transceiver Project (GBT) • “GBLD” Gigabit Laser Driver chip final version in 2012. • “GBT-TIA” Transimpedance Amplifier chip in 2010. • “GBTX”, first prototype in 2009, second prototype in 2012. • XFEL Project for the XFEL Synchrotron facility • First proto with all elements in the pixel, bump test chip in 2010 MPW. • Second prototype submitted in 2012 MPW. • DSSC Project for the XFEL Synchrotron facility • Prototype submissions of circuit blocks in 2010, 2011, 2012. • CBC: CMS Tracker Front-End ASIC • First prototype submitted in 2010 MPW. • Second prototype submitted in 2012 MPW. • S-Altro: ALICE TPC Readout ASIC • Submitted in 2010 on an MPW (24 wafers). • NA62 Pixel Gigatracker detector • Readout test chip with ON pixel TDC cell • Readout test chip with End-Of-Column TDC cell Kostas.Kloukinas@cern.ch

  8. 130nm Major Projects • FE-I4_B: ATLAS PIXEL ‘b-layer upgrade’ • Full scale prototype chip, 19x20mm2 (2010Q2 engineering run) • Final production (96 wafers) in 2012. • MEDIPIX project • MEDIPIX3_V1: 12 wafers in 2009 • MEDIPIX3_V2: 12 wafers in 2010 • MEDIPIX_RX: 48 wafers in 2012 Medipix: Medical X-ray diagnosis with contrast enhancement and dose reduction Kostas.Kloukinas@cern.ch

  9. 130nm Mixed Signal Design Kit • CERN integrated a 130nm Mixed Signal Design kit. • Provides maintenance and distributes the kit to the collaborating institutes. • Mixed Signal Design kit in production: V1.8 • Release date: 10/6/2011 • Stable and fully functional. • Foundry news on the CMOS8RF PDK: • There are no planned kit releases for this year.   • Plans to offer a "maintenance" kit release in 2013 but the exact timescale is not known yet. • CERN will prepare and distribute the updated Mixed Signal Kit soon after. Kostas.Kloukinas@cern.ch

  10. 130 nm Mixed Signal Kit Distribution • Italy • INFN Rome • INFN Torino • INFN Bologna • INFN Bari • INFN Cagliari • Univ. of Bergamo • Univ. of Pisa • Univ. of Pavia • Polytecnico di Milano • US • Brookhaven Lab. • Columbia University • Fermilab • Lawrence Berkeley Lab. • Rutgers Univ. • Univ. of Chicago • Univ. of Hawaii • Univ. of Pennsylvania • Ohio State University • SMU,Dallas • Santa Cruz Institute • France • CEA SACLAY, Paris • IN2P3, Paris • LPNHE, Paris • IPNL, Lyon • IPHC, Strasbourg • LAPP, Annecy • LPC, Clermont-Ferrand • CPPM, Marceille • INPG, Grenoble • Germany • BergischeUniversität Wuppertal • DESY, Hamburg • Institut der Universitaet Heidelberg • Max-Plank-Institute fur Physik • Max-Plank-Institute Halbleiterlabor • ForschungszentrumJulich • University of Siegen • Universität Bonn • UK • Rutherford Appleton Lab. • Imperial College London • University College London CERN • Portugal • INESC, Porto • LIP, Lisbon • Switzerland • Universite de Geneve • Spain • Univ. of Barcelona • IFAE, Barcelona • IFIC, Valencia • Netherlands • NIKEF, Amsterdam • Poland • AGH Univ. of Science & Tech. Kostas.Kloukinas@cern.ch

  11. Plans for Technology Support • For the CMOS8RF 130nm technology, there will be continuing support with updates on the Mixed Signal design kit. • For advanced technologies (65nm) a different scheme is envisaged for distributing the design kit and providing technical support. • More information available on the next presentation by Sandro Bonacini. Kostas.Kloukinas@cern.ch

  12. Thank You Kostas.Kloukinas@cern.ch

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