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Synthesis and Characterization of Nearly Monodisperse CdE (E = S, Se, Te) Semiconductor Nanocrystallites

Synthesis and Characterization of Nearly Monodisperse CdE (E = S, Se, Te) Semiconductor Nanocrystallites. Announcer : Ji -goo Kang. ( C.B. Murray, D.J. Norris, and M.G. Bawendi ). Introduction <Quantum dot>. Introduction <Comparing of q uantum dot >.

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Synthesis and Characterization of Nearly Monodisperse CdE (E = S, Se, Te) Semiconductor Nanocrystallites

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  1. Synthesis and Characterization of Nearly MonodisperseCdE(E = S, Se, Te) Semiconductor Nanocrystallites Announcer : Ji-goo Kang (C.B. Murray, D.J. Norris, and M.G. Bawendi)

  2. Introduction <Quantum dot>

  3. Introduction<Comparing of quantum dot>

  4. Introduction <Growth Mechanism>

  5. Experimental Section (CdTe are prepared by Method 1 with TOP=Te, injection T. ~240 ℃, growth T. 190-220 ℃)

  6. Results and Discussion

  7. Reference 반도체 나노결정입자, 주진 외, News and Informations for Chemical engineers, vol.23, 2005 양자점 분자구조의 특성 및 소자응용, 김진석 외, Journal of Natural Science, vol.26, 2006 Bawendi Group Homepage http://nanocluster.mit.edu/research.php Sang-wook Kim Group Homepage http://nanomat.ajou.ac.kr/ Kinetics of II-IV and III-V Colloidal Semiconductor Nanocrystal Growth: focusing of size distributions, XiaogangPeng, J.Am.Chem,1998

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