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Saturated gain in GaN epilayers studied by variable stripe length technique

Saturated gain in GaN epilayers studied by variable stripe length technique. J. Mickevičiusa and G. Tamulaitis Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania M. S. Shur

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Saturated gain in GaN epilayers studied by variable stripe length technique

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  1. Saturated gain in GaN epilayers studied by variable stripe length technique J. Mickevičiusa and G. Tamulaitis Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, LT-10222 Vilnius, Lithuania M. S. Shur Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 Q. Fareed, J. P. Zhang, and R. Gaska Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 Rui Li Journal Club, 3.05.07 Electrical Engineering Boston University JOURNAL OF APPLIED PHYSICS 99, 103513 2006

  2. Outline • Introduction to GaN • VSL technique • Results

  3. Introduction to GaN • GaNDirect Band gapWurtzite Crystal Structure • High Optical Gain, 25000cm-1 predictedHigh joint density of states • ApplicationBlue/UV LEDs – DisplayBlue LD – Blu-ray Disc Playstation3

  4. Blu-ray Disc

  5. Variable Stripe Length Technique • One Dimensional Amplifier • Amplified Spontaneous Emission

  6. Time-resolved VSL technique L. Dal Negro et al., Appl. Phys. Lett., 82, 4636 (2003)

  7. Gain Saturation in VSL ε is related to the depletion of the excited state population due to the ASE. Information from the population inversion level is needed! Analysis of gain saturation behavior in GaN based quantum well lasersVehse et. al. Aachen phys. stat. sol (c) 0 , 43-47 (2002)

  8. Pump Diffraction Effect • The pump along the stripe is not homogeneous due to Fresnel diffraction caused by the edge of the slit. • ASE intensity from short stripe length is unreliable. • Place the slit closer The slit is placed 3cm from the sample Applicability conditions and experimental analysis of the variable stripe length method for gain measurements L.Dal Negro et al. Optics Communications 299 (2004)

  9. Sample Preparation • Low pressure metal-orgainc chemical vapor deposition (MOCVD) 11μm on AlN buffer layers, on saphire by migration ehanced MOCVD(MEMOCVD). • Dislocation densities 108 and 4×109cm-2 for samples S1 and S2.

  10. Experiment Pump: Fourth harmonic (266nm) of the Nd:YaG laser (pulse duration 4ns), focused into a 30μm wide stripe. For L: 2~10μm S1: g=7300cm-1 S2: g=3600cm-1

  11. ASE spectrum • Emission peak red shifts • Gap between Quasi-Fermi Energies is lowered for long stripe length. The short-wavelength side emission band is saturated more rapidly.

  12. Gain Spectrum 1: L= 3μm 2L= 6μm 2: L= 5μm 2L= 10μm gpeak = 6500cm-1

  13. ASE dependence on Iex • The dependence faster than Iex2 is usually considered as an indication of stimulated emission. • The undetected emission propagating perpendicularly depletes the population 1mm 10μm

  14. L 2.1nm sapphire GaN Air VCSEL Configuration • Fabry-Parot Resonance ∆λ= λ2/2nL=2.3nm • gthr=(2L)-1ln(R1R2)-1=2200cm-1R1,R2 are the reflection coefficients of the interfaces

  15. Light-induced Transient Grating τG: Characteristic grating decay time τR: Carrier life time Da: Diffusion coefficient Λ: Grating Spacing

  16. Comparison between the 2 samples • Dislocations increases the density of nonradiative recombination centers • The carrier life times are comparable with the pump duration (4ns), so the population inversion level depends on the carrier life time.

  17. Conclusion • Gain values as high as ~7500cm-1 is observed. • Gain saturation limits the applicability of the VSL technique in high gain materials. Make the layer thinner, focus the pump to a narrower stripe. • VSL technique is useful to compare different GaN samples.

  18. Thank you!

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