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Semiconductor Device Modeling and Characterization EE5342, Lecture 20 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 20 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Gummel-Poon Static npn Circuit Model. Intrinsic Transistor. C. R C. I BR. B. R BB. I LC. I CC - I EC = {IS/Q B }*

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Semiconductor Device Modeling and Characterization EE5342, Lecture 20 Spring 2003

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  1. Semiconductor Device Modeling and CharacterizationEE5342, Lecture 20Spring 2003 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. Gummel-Poon Staticnpn Circuit Model Intrinsic Transistor C RC IBR B RBB ILC ICC -IEC = {IS/QB}* {exp(vBE/NFVt)-exp(vBC/NRVt)} IBF B’ ILE RE E

  3. IBF = IS expf(vBE/NFVt)/BF ILE = ISE expf(vBE/NEVt) IBR = IS expf(vBC/NRVt)/BR ILC = ISC expf(vBC/NCVt) ICC -IEC = IS(exp(vBE/NFVt - exp(vBC/NRVt)/QB QB= {+ [+ (BFIBF/IKF + BRIBR/IKR)]1/2}  (1 - vBC/VAF - vBE/VAR )-1 Gummel Poon npnModel Equations

  4. RC vBCx vBC - iB + + RB vBE - RE iE BJT CharacterizationReverse Gummel vBEx= 0 = vBE+ iBRB- iERE vBCx = vBC+iBRB+(iB+iE)RC iB = IBR + ILC = (IS/BR)expf(vBC/NRVt) + ISCexpf(vBC/NCVt) iE = bRIBR/QB = ISexpf(vBC/NRVt) (1-vBC/VAF-vBE/VAR ) {IKR terms}-1

  5. Sample rg data forparameter extraction • IS=10f • Nr=1 • Br=2 • Isc=10p • Nc=2 • Ikr=.1m • Vaf=100 • Rc=5 • Rb=100 iB data iE data iE, iB vs. vBCext

  6. Definitions ofNeff and ISeff • In a region where iC or iB is approxi-mately a single exponential term, then iE or iB ~ ISeffexp (vBCext /(NReffVt) where Neff={dvBCext/d[ln(i)]}/Vt, and ISeff = exp[ln(i) - vBCext/(NeffVt)]

  7. Reverse GummelData Sensitivities Region a - IKRIS, RB, RC, NR, VAF Region b - IS, NR, VAF, RB, RC Region c - IS/BR, NR, RB, RC Region d - IS/BR, NR Region e - ISC, NC c vBCx = 0 a d e b iB iE iE(A),iB(A) vs. vBC(V)

  8. Region (d) rgData Sensitivities Region d - BR, IS, NR iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  9. Simple extractionof BR from data • Data set used Br = 2 • Extraction gives max iE/iB = 1.7 for 0.48 V < vBC < 0.55V 1.13A< iE < 14.4A • Minimum value of Neff =1 for same range iE/iB vs. iE

  10. Region (b) rgData Sensitivities Region b - IS, NR, VAF, RB, RC iE = bRIBR/QB = ISexp(vBC/NRVt) (1-vBC/VAF-vBE/VAR ){IKR terms}-1

  11. Region (e) rgData Sensitivities Region e - ISC, NC iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  12. Simple extractionof IS, ISC from data Data set used • IS = 10fA • ISC = 10pA Min ISeff for iE data = 9.96E-15 for vBC = 0.200 Max ISeff value for iB data is 8.44E-12 for vBC = 0.200 iB data iE data ISeff vs. vBCext

  13. Simple extraction of NR, NC from rg data Data set used Nr = 1 Nc = 2 Flat Neff region from iE data = 1.00 for 0.195 < vBC < 0.375 Max Neff value from iB data is 1.914 for 0.195 < vBC < 0.205 iB data iE data NEeff vs. vBCext

  14. Region (c) rgData Sensitivities Region c - BR, IS, NR, RB, RC iB = IBR + ILC = IS/BRexpf(vBC/NRVt) + ISCexpf(vBC/NCVt)

  15. Region (a) rgData Sensitivities Region a - IKRIS, RB, RC, NR, VAF iE=bRIBR/QB~[ISIKR]1/2exp(vBC/2NRVt) (1-vBC/VAF-vBE/VAR )

  16. RE-flyback dataextraction of RE REvCE/iB (from IC-CAP Modeling Reference, p. 6-37) RBM(vBE - vCE)/iB (adapted by RLC from IC-CAP Modeling Reference, p. 6-39) o.c. Qintr vCE RBB B’ vBE E’ iB RE

  17. Extraction of REfrom refly data RE vCE/iB • Slope gives RE  7.1 Ohm • Model data assumed RE = 1 Ohm

  18. Extraction of RBMfrom refly data RBM (vBE - vCE)/iB • Slope gives RBM  108 Ohm • Model data assumed RB = RBM = 100 Ohm

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